IL130310A - Deposition of silicon dioxide and silicon oxynitride films using bis (tertiarybutylamino) silane - Google Patents
Deposition of silicon dioxide and silicon oxynitride films using bis (tertiarybutylamino) silaneInfo
- Publication number
- IL130310A IL130310A IL13031099A IL13031099A IL130310A IL 130310 A IL130310 A IL 130310A IL 13031099 A IL13031099 A IL 13031099A IL 13031099 A IL13031099 A IL 13031099A IL 130310 A IL130310 A IL 130310A
- Authority
- IL
- Israel
- Prior art keywords
- tertiarybutylamino
- silane
- bis
- deposition
- oxynitride films
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 230000008021 deposition Effects 0.000 title 1
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 235000012239 silicon dioxide Nutrition 0.000 title 1
- 239000000377 silicon dioxide Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
- H01L21/31612—Deposition of SiO2 on a silicon body
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/095,818 US5976991A (en) | 1998-06-11 | 1998-06-11 | Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino) silane |
Publications (2)
Publication Number | Publication Date |
---|---|
IL130310A0 IL130310A0 (en) | 2000-06-01 |
IL130310A true IL130310A (en) | 2003-01-12 |
Family
ID=22253723
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL13031099A IL130310A (en) | 1998-06-11 | 1999-06-04 | Deposition of silicon dioxide and silicon oxynitride films using bis (tertiarybutylamino) silane |
Country Status (9)
Country | Link |
---|---|
US (1) | US5976991A (zh) |
EP (1) | EP0964441B1 (zh) |
JP (1) | JP3055123B2 (zh) |
KR (1) | KR100323628B1 (zh) |
CN (1) | CN1138872C (zh) |
DE (1) | DE69901367T2 (zh) |
IL (1) | IL130310A (zh) |
SG (1) | SG71928A1 (zh) |
TW (1) | TW498109B (zh) |
Families Citing this family (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6235650B1 (en) * | 1997-12-29 | 2001-05-22 | Vanguard International Semiconductor Corporation | Method for improved semiconductor device reliability |
US6063666A (en) * | 1998-06-16 | 2000-05-16 | Advanced Micro Devices, Inc. | RTCVD oxide and N2 O anneal for top oxide of ONO film |
TW476656B (en) | 1998-09-17 | 2002-02-21 | Ishigaki Co Ltd | Continuous squeeze-dewatering device |
US6251802B1 (en) | 1998-10-19 | 2001-06-26 | Micron Technology, Inc. | Methods of forming carbon-containing layers |
US6462371B1 (en) * | 1998-11-24 | 2002-10-08 | Micron Technology Inc. | Films doped with carbon for use in integrated circuit technology |
US6303520B1 (en) * | 1998-12-15 | 2001-10-16 | Mattson Technology, Inc. | Silicon oxynitride film |
JP3819660B2 (ja) * | 2000-02-15 | 2006-09-13 | 株式会社日立国際電気 | 半導体装置の製造方法および半導体製造装置 |
US6515350B1 (en) * | 2000-02-22 | 2003-02-04 | Micron Technology, Inc. | Protective conformal silicon nitride films and spacers |
US6518626B1 (en) * | 2000-02-22 | 2003-02-11 | Micron Technology, Inc. | Method of forming low dielectric silicon oxynitride spacer films highly selective of etchants |
US6429149B1 (en) | 2000-02-23 | 2002-08-06 | International Business Machines Corporation | Low temperature LPCVD PSG/BPSG process |
US6486015B1 (en) * | 2000-04-25 | 2002-11-26 | Infineon Technologies Ag | Low temperature carbon rich oxy-nitride for improved RIE selectivity |
CN100442454C (zh) * | 2000-09-19 | 2008-12-10 | 马特森技术公司 | 形成介电薄膜的方法 |
US6534388B1 (en) * | 2000-09-27 | 2003-03-18 | Chartered Semiconductor Manufacturing Ltd. | Method to reduce variation in LDD series resistance |
EP1199743A3 (en) * | 2000-10-17 | 2004-06-30 | Texas Instruments Deutschland Gmbh | Method of fabricating a stack consisting of a layer of Si3N4 topped by a layer of SiO2 on a semiconductor substrate |
DE10051382A1 (de) * | 2000-10-17 | 2002-05-02 | Texas Instruments Deutschland | Verfahren zum Herstellen eines Stapels aus einer Si¶3¶N¶4¶-Schicht und einer darüberliegenden Si0¶2¶-Schicht auf einem Halbleitersubstrat |
US6500772B2 (en) * | 2001-01-08 | 2002-12-31 | International Business Machines Corporation | Methods and materials for depositing films on semiconductor substrates |
US7084080B2 (en) * | 2001-03-30 | 2006-08-01 | Advanced Technology Materials, Inc. | Silicon source reagent compositions, and method of making and using same for microelectronic device structure |
US7005392B2 (en) * | 2001-03-30 | 2006-02-28 | Advanced Technology Materials, Inc. | Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same |
US20020182342A1 (en) * | 2001-04-13 | 2002-12-05 | Luc Ouellet | Optical quality silica films |
JP4897159B2 (ja) * | 2001-08-03 | 2012-03-14 | 株式会社日立国際電気 | 半導体装置の製造方法 |
US6670255B2 (en) * | 2001-09-27 | 2003-12-30 | International Business Machines Corporation | Method of fabricating lateral diodes and bipolar transistors |
JP4021653B2 (ja) * | 2001-11-30 | 2007-12-12 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Cvd法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法 |
US6713127B2 (en) * | 2001-12-28 | 2004-03-30 | Applied Materials, Inc. | Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD |
CN1643674A (zh) * | 2002-07-19 | 2005-07-20 | 阿维扎技术公司 | 使用氨基硅烷和臭氧的低温介电沉积 |
US20060178019A1 (en) * | 2002-08-18 | 2006-08-10 | Aviza Technology, Inc. | Low temperature deposition of silicon oxides and oxynitrides |
TW200424343A (en) * | 2002-09-05 | 2004-11-16 | Asml Us Inc | Low temperature deposition of silicon based thin films by single-wafer hot-wall rapid thermal chemical vapor deposition |
JP4358492B2 (ja) * | 2002-09-25 | 2009-11-04 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 熱化学気相成長法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法 |
JP2004153066A (ja) | 2002-10-31 | 2004-05-27 | Fujitsu Ltd | 半導体装置の製造方法 |
US6963006B2 (en) * | 2003-01-15 | 2005-11-08 | Air Products And Chemicals, Inc. | Process for the production and purification of bis(tertiary-butylamino)silane |
US7122222B2 (en) * | 2003-01-23 | 2006-10-17 | Air Products And Chemicals, Inc. | Precursors for depositing silicon containing films and processes thereof |
JP4954448B2 (ja) * | 2003-04-05 | 2012-06-13 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 有機金属化合物 |
US7163860B1 (en) | 2003-05-06 | 2007-01-16 | Spansion Llc | Method of formation of gate stack spacer and charge storage materials having reduced hydrogen content in charge trapping dielectric flash memory device |
JP3811697B2 (ja) * | 2003-11-19 | 2006-08-23 | 松下電器産業株式会社 | 半導体装置の製造方法 |
JP4187252B2 (ja) | 2004-01-06 | 2008-11-26 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
US20050181633A1 (en) * | 2004-02-17 | 2005-08-18 | Hochberg Arthur K. | Precursors for depositing silicon-containing films and processes thereof |
US7049200B2 (en) * | 2004-05-25 | 2006-05-23 | Applied Materials Inc. | Method for forming a low thermal budget spacer |
US20050287747A1 (en) * | 2004-06-29 | 2005-12-29 | International Business Machines Corporation | Doped nitride film, doped oxide film and other doped films |
US20060062913A1 (en) * | 2004-09-17 | 2006-03-23 | Yun-Ren Wang | Process for depositing btbas-based silicon nitride films |
US20060182885A1 (en) * | 2005-02-14 | 2006-08-17 | Xinjian Lei | Preparation of metal silicon nitride films via cyclic deposition |
US7875556B2 (en) * | 2005-05-16 | 2011-01-25 | Air Products And Chemicals, Inc. | Precursors for CVD silicon carbo-nitride and silicon nitride films |
US7248758B2 (en) * | 2005-06-08 | 2007-07-24 | Verizon Business Global Llc | Hitless tunable filter |
JP2006351694A (ja) * | 2005-06-14 | 2006-12-28 | Fujitsu Ltd | 半導体装置およびその製造方法 |
US20070154637A1 (en) * | 2005-12-19 | 2007-07-05 | Rohm And Haas Electronic Materials Llc | Organometallic composition |
JP5524443B2 (ja) * | 2006-03-24 | 2014-06-18 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置及びその製造方法 |
US20070262399A1 (en) * | 2006-05-10 | 2007-11-15 | Gilbert Dewey | Sealing spacer to reduce or eliminate lateral oxidation of a high-k gate dielectric |
US8530361B2 (en) | 2006-05-23 | 2013-09-10 | Air Products And Chemicals, Inc. | Process for producing silicon and oxide films from organoaminosilane precursors |
US8318966B2 (en) * | 2006-06-23 | 2012-11-27 | Praxair Technology, Inc. | Organometallic compounds |
US7956207B2 (en) * | 2006-09-28 | 2011-06-07 | Praxair Technology, Inc. | Heteroleptic organometallic compounds |
US20080124946A1 (en) * | 2006-11-28 | 2008-05-29 | Air Products And Chemicals, Inc. | Organosilane compounds for modifying dielectrical properties of silicon oxide and silicon nitride films |
US7678422B2 (en) * | 2006-12-13 | 2010-03-16 | Air Products And Chemicals, Inc. | Cyclic chemical vapor deposition of metal-silicon containing films |
US20080145978A1 (en) * | 2006-12-18 | 2008-06-19 | Air Liquide Electronics U.S. Lp | Deposition of silicon germanium nitrogen precursors for strain engineering |
US7750173B2 (en) * | 2007-01-18 | 2010-07-06 | Advanced Technology Materials, Inc. | Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films |
US20080207007A1 (en) * | 2007-02-27 | 2008-08-28 | Air Products And Chemicals, Inc. | Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films |
JP2008283051A (ja) * | 2007-05-11 | 2008-11-20 | Toshiba Corp | 半導体記憶装置及び半導体記憶装置の製造方法 |
KR100956210B1 (ko) * | 2007-06-19 | 2010-05-04 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | 금속 실리콘 질화물 박막의 플라즈마 강화 사이클릭증착방법 |
US20090130414A1 (en) * | 2007-11-08 | 2009-05-21 | Air Products And Chemicals, Inc. | Preparation of A Metal-containing Film Via ALD or CVD Processes |
US8298628B2 (en) | 2008-06-02 | 2012-10-30 | Air Products And Chemicals, Inc. | Low temperature deposition of silicon-containing films |
US8058138B2 (en) * | 2008-07-17 | 2011-11-15 | Micron Technology, Inc. | Gap processing |
US8148249B2 (en) * | 2008-09-12 | 2012-04-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of fabricating high-k metal gate devices |
US8330136B2 (en) | 2008-12-05 | 2012-12-11 | Advanced Technology Materials, Inc. | High concentration nitrogen-containing germanium telluride based memory devices and processes of making |
US9012876B2 (en) | 2010-03-26 | 2015-04-21 | Entegris, Inc. | Germanium antimony telluride materials and devices incorporating same |
US9190609B2 (en) | 2010-05-21 | 2015-11-17 | Entegris, Inc. | Germanium antimony telluride materials and devices incorporating same |
CN102011105B (zh) * | 2010-10-12 | 2014-06-04 | 上海宏力半导体制造有限公司 | 低压淀积氧化硅工艺方法 |
US8460753B2 (en) * | 2010-12-09 | 2013-06-11 | Air Products And Chemicals, Inc. | Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes |
EP2761054B1 (en) * | 2011-09-30 | 2019-08-14 | Arkema, Inc. | Deposition of silicon oxide by atmospheric pressure chemical vapor deposition |
US9640757B2 (en) | 2012-10-30 | 2017-05-02 | Entegris, Inc. | Double self-aligned phase change memory device structure |
CN104498895B (zh) * | 2014-12-23 | 2017-02-22 | 国家纳米科学中心 | 一种超薄氮氧化硅膜材料及其制备方法和用途 |
KR20190114874A (ko) | 2018-03-30 | 2019-10-10 | 에스케이트리켐 주식회사 | 실리콘 박막 형성용 전구체 및 이를 이용한 실리콘 함유 박막 형성 방법 및 상기 실리콘 함유 박막을 포함하는 반도체 소자. |
CN110459462B (zh) * | 2019-08-08 | 2022-02-15 | 武汉新芯集成电路制造有限公司 | 半导体器件的形成方法 |
KR20210041809A (ko) | 2019-10-08 | 2021-04-16 | 에스케이트리켐 주식회사 | 실리콘 박막 형성용 전구체 및 이를 이용한 실리콘 박막 형성 방법 및 상기 실리콘 박막을 포함하는 반도체 소자. |
CN111816556B (zh) * | 2020-06-03 | 2024-01-23 | 中国科学院微电子研究所 | 晶体管及制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4992306A (en) * | 1990-02-01 | 1991-02-12 | Air Products Abd Chemicals, Inc. | Deposition of silicon dioxide and silicon oxynitride films using azidosilane sources |
JP2637265B2 (ja) * | 1990-06-28 | 1997-08-06 | 株式会社東芝 | 窒化珪素膜の形成方法 |
JPH04151839A (ja) * | 1990-10-16 | 1992-05-25 | Kawasaki Steel Corp | シリコンオキシナイトライド膜の製造方法 |
US5459108A (en) * | 1992-10-06 | 1995-10-17 | Sharp Kabushiki Kaisha | Normal pressure CVD process for manufacture of a semiconductor device through reaction of a nitrogen containing organic source with ozone |
JPH06132284A (ja) * | 1992-10-22 | 1994-05-13 | Kawasaki Steel Corp | 半導体装置の保護膜形成方法 |
US5874368A (en) * | 1997-10-02 | 1999-02-23 | Air Products And Chemicals, Inc. | Silicon nitride from bis(tertiarybutylamino)silane |
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1998
- 1998-06-11 US US09/095,818 patent/US5976991A/en not_active Expired - Lifetime
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1999
- 1999-06-02 EP EP99109396A patent/EP0964441B1/en not_active Expired - Lifetime
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- 1999-06-05 TW TW088109373A patent/TW498109B/zh not_active IP Right Cessation
- 1999-06-07 KR KR1019990020902A patent/KR100323628B1/ko not_active IP Right Cessation
- 1999-06-10 JP JP11163791A patent/JP3055123B2/ja not_active Expired - Lifetime
- 1999-06-11 CN CNB991084594A patent/CN1138872C/zh not_active Expired - Lifetime
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EP0964441A2 (en) | 1999-12-15 |
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DE69901367T2 (de) | 2002-08-29 |
KR20000005967A (ko) | 2000-01-25 |
KR100323628B1 (ko) | 2002-02-07 |
IL130310A0 (en) | 2000-06-01 |
SG71928A1 (en) | 2000-04-18 |
CN1239155A (zh) | 1999-12-22 |
CN1138872C (zh) | 2004-02-18 |
US5976991A (en) | 1999-11-02 |
EP0964441B1 (en) | 2002-05-02 |
JP2000077403A (ja) | 2000-03-14 |
TW498109B (en) | 2002-08-11 |
JP3055123B2 (ja) | 2000-06-26 |
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