IL110390D0 - Method for making a photovoltaic device - Google Patents

Method for making a photovoltaic device

Info

Publication number
IL110390D0
IL110390D0 IL11039094A IL11039094A IL110390D0 IL 110390 D0 IL110390 D0 IL 110390D0 IL 11039094 A IL11039094 A IL 11039094A IL 11039094 A IL11039094 A IL 11039094A IL 110390 D0 IL110390 D0 IL 110390D0
Authority
IL
Israel
Prior art keywords
cadmium telluride
layer
film layer
pre
cadmium
Prior art date
Application number
IL11039094A
Original Assignee
Photon Energy Inc
Golden Photon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US9559993A priority Critical
Application filed by Photon Energy Inc, Golden Photon Inc filed Critical Photon Energy Inc
Publication of IL110390D0 publication Critical patent/IL110390D0/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/073Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/543Solar cells from Group II-VI materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • Y02P70/52Manufacturing of products or systems for producing renewable energy
    • Y02P70/521Photovoltaic generators

Abstract

The present invention involves low cost, reliable manufacturing techniques and resulting photovoltaic devices, and particularly those having a heterojunction between cadmium sulfide and cadmium telluride layers. In one aspect, a photovoltaic device may be produced comprising a base substrate (202), a bottom electrode film layer of high conductivity tin oxide (206), a secondary n-type film layer of low conductivity tin oxide (210), a primary n-type film layer of cadmium telluride (214), an ohmic contact layer of graphite (218A, 218B), and a top electrode film layer (230) of a conductive metal. Interconnection of a plurality of photovoltaic cells in series may be aided by the use of pre-pre-resist lines (204) and pre-resist lines (208) which are substantially removed during manufacture. Pretreating of feed materials is provided for making a cadmium telluride layer. Intercalated graphite may be used to improve ohmic contact to a cadmium telluride layer. Cadmium telluride morphology may be improved by a preoxidation and gettering sequence. The effect of pinholes through cadmium telluride may be reduced by forming Schottky barriers through the pinholes with a cadmium sulfide layer. A photoactive area (506) may be electrically isolated using border edging (502) and/or one or more isolation cuts (508). A bus bar (614) of conductive metal with a bead of graphite paste (616) is provided.
IL11039094A 1993-07-21 1994-07-20 Method for making a photovoltaic device IL110390D0 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US9559993A true 1993-07-21 1993-07-21

Publications (1)

Publication Number Publication Date
IL110390D0 true IL110390D0 (en) 1994-10-21

Family

ID=22252742

Family Applications (1)

Application Number Title Priority Date Filing Date
IL11039094A IL110390D0 (en) 1993-07-21 1994-07-20 Method for making a photovoltaic device

Country Status (3)

Country Link
AU (1) AU7369394A (en)
IL (1) IL110390D0 (en)
WO (1) WO1995003630A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT362656T (en) * 1999-03-23 2007-06-15 Kaneka Corp Photovoltaic module
EP2104145A1 (en) 2008-03-18 2009-09-23 AGC Flat Glass Europe SA Glass substrate coated with thin films and method of manufacturing same
WO2012012238A1 (en) * 2010-07-21 2012-01-26 First Solar, Inc Back contact formation
US20140060634A1 (en) * 2012-08-31 2014-03-06 Primestar Solar, Inc. Use of an inert graphite layer in a back contact of a photovoltaic cell

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4239809A (en) * 1978-03-15 1980-12-16 Photon Power, Inc. Method for quality film formation
US4207119A (en) * 1978-06-02 1980-06-10 Eastman Kodak Company Polycrystalline thin film CdS/CdTe photovoltaic cell
US4243432A (en) * 1978-09-25 1981-01-06 Photon Power, Inc. Solar cell array
US4251286A (en) * 1979-09-18 1981-02-17 The University Of Delaware Thin film photovoltaic cells having blocking layers
US4414252A (en) * 1980-11-24 1983-11-08 Photon Power, Inc. Spray forming thin films
US4327119A (en) * 1981-02-03 1982-04-27 Radiation Monitoring Devices, Inc. Method to synthesize and produce thin films by spray pyrolysis
JPS60170270A (en) * 1984-02-15 1985-09-03 Matsushita Electric Ind Co Ltd Constituting method of package for solar cell element
US4695674A (en) * 1985-08-30 1987-09-22 The Standard Oil Company Preformed, thin-film front contact current collector grid for photovoltaic cells
US4650921A (en) * 1985-10-24 1987-03-17 Atlantic Richfield Company Thin film cadmium telluride solar cell
DE3542111A1 (en) * 1985-11-28 1987-06-04 Nukem Gmbh A method for carrying out a glow process
JPH0368547B2 (en) * 1985-12-05 1991-10-28 Matsushita Electric Ind Co Ltd
US4745078A (en) * 1986-01-30 1988-05-17 Siemens Aktiengesellschaft Method for integrated series connection of thin film solar cells
US4675466A (en) * 1986-04-05 1987-06-23 Chronar Corp. Stabilization of intraconnections and interfaces
US4735662A (en) * 1987-01-06 1988-04-05 The Standard Oil Company Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors
US4865999A (en) * 1987-07-08 1989-09-12 Glasstech Solar, Inc. Solar cell fabrication method
US4872925A (en) * 1987-10-29 1989-10-10 Glasstech, Inc. Photovoltaic cell fabrication method and panel made thereby
US4849029A (en) * 1988-02-29 1989-07-18 Chronar Corp. Energy conversion structures
US4838950A (en) * 1988-04-22 1989-06-13 Chronar Corp. Stabilization of intraconnections and interfaces
US5022930A (en) * 1989-06-20 1991-06-11 Photon Energy, Inc. Thin film photovoltaic panel and method
US5279678A (en) * 1992-01-13 1994-01-18 Photon Energy, Inc. Photovoltaic cell with thin CS layer
US5268037A (en) * 1992-05-21 1993-12-07 United Solar Systems Corporation Monolithic, parallel connected photovoltaic array and method for its manufacture

Also Published As

Publication number Publication date
WO1995003630A1 (en) 1995-02-02
AU7369394A (en) 1995-02-20

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