HUP0201871A2 - Diode comprising a metal semiconductor contact and a method for the production thereof - Google Patents
Diode comprising a metal semiconductor contact and a method for the production thereofInfo
- Publication number
- HUP0201871A2 HUP0201871A2 HU0201871A HUP0201871A HUP0201871A2 HU P0201871 A2 HUP0201871 A2 HU P0201871A2 HU 0201871 A HU0201871 A HU 0201871A HU P0201871 A HUP0201871 A HU P0201871A HU P0201871 A2 HUP0201871 A2 HU P0201871A2
- Authority
- HU
- Hungary
- Prior art keywords
- zone
- diode
- conductivity type
- electrode
- same conductivity
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000002184 metal Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A találmány tárgya dióda, fém félvezető kontaktussal és eljárás annakelőállítására. A találmány szerinti dióda magába foglal két fémeselektróda (5, 6) között elrendezett (5. 6) elvezető szubsztrátoterősen adalékolt első zónával (3), amely ohmos átvezetést képez azelső elektródához (6), ugyanolyan vezetőképesség típusú, gyengénadalékolt második zónát (1), amely egyenirányító átvezetést képez amásodik elektródához (5), ugyanolyan vezetőképesség típusú harmadikzónát (2), amely gyengébben adalékolt, mint a második zóna (3), ahol aharmadik zóna (2) az első és a második (1, 3) zónát egymástólelválasztja és a második zóna (1) a második elektróda (5 és a harmadikzóna (2) közé van bezárva. A találmány szerinti eljárás soránfélvezető szubsztrát harmadik zónájának (2) felületét, az erősenadalékolt első zónával (3) és a gyengén adalékolt, azonosvezetőképesség típusú harmadik zónával (2) veszik körül, azonosvezetőképesség típusú második zónát (1), mely erősebben adalékolt,mint a harmadik zóna (2), hozunk létre, és a felületen fémeselektródot (5) választanak ki, amely a második zónát (1) maga és aharmadik zóna (2) közé zárja be. Ó
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19930781A DE19930781B4 (de) | 1999-07-03 | 1999-07-03 | Diode mit Metall-Halbleiterkontakt und Verfahren zu ihrer Herstellung |
PCT/DE2000/001812 WO2001003204A1 (de) | 1999-07-03 | 2000-06-03 | Diode mit metall-halbleiterkontakt und verfahren zu ihrer herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
HUP0201871A2 true HUP0201871A2 (en) | 2003-01-28 |
Family
ID=7913590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HU0201871A HUP0201871A2 (en) | 1999-07-03 | 2000-06-03 | Diode comprising a metal semiconductor contact and a method for the production thereof |
Country Status (7)
Country | Link |
---|---|
US (1) | US6727525B1 (hu) |
EP (1) | EP1198844B1 (hu) |
JP (1) | JP2003504855A (hu) |
CZ (1) | CZ20026A3 (hu) |
DE (2) | DE19930781B4 (hu) |
HU (1) | HUP0201871A2 (hu) |
WO (1) | WO2001003204A1 (hu) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003061015A1 (de) * | 2002-01-15 | 2003-07-24 | Robert Bosch Gmbh | Halbleiteranordnung mit einem pn-übergang und verfahren zur herstellung einer halbleiteranordnung |
US6825073B1 (en) * | 2003-09-17 | 2004-11-30 | Chip Integration Tech Co., Ltd. | Schottky diode with high field breakdown and low reverse leakage current |
US7189610B2 (en) * | 2004-10-18 | 2007-03-13 | Semiconductor Components Industries, L.L.C. | Semiconductor diode and method therefor |
DE102004063180B4 (de) * | 2004-12-29 | 2020-02-06 | Robert Bosch Gmbh | Verfahren zum Herstellen von Halbleiterchips aus einem Siliziumwafer und damit hergestellte Halbleiterbauelemente |
JP4613682B2 (ja) * | 2005-05-09 | 2011-01-19 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP4715324B2 (ja) * | 2005-06-20 | 2011-07-06 | 住友電気工業株式会社 | 整流素子 |
US7560355B2 (en) * | 2006-10-24 | 2009-07-14 | Vishay General Semiconductor Llc | Semiconductor wafer suitable for forming a semiconductor junction diode device and method of forming same |
KR101438468B1 (ko) * | 2008-07-31 | 2014-09-05 | 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. | 다층의 재구성가능한 스위치 |
JP2010283403A (ja) * | 2010-09-27 | 2010-12-16 | Sumitomo Electric Ind Ltd | 整流素子およびその製造方法 |
RU2484553C2 (ru) * | 2011-04-11 | 2013-06-10 | ООО "ПСиЭл" | Ограничитель напряжения с отрицательным участком динамического сопротивления |
CN108198857A (zh) * | 2017-12-28 | 2018-06-22 | 北京世纪金光半导体有限公司 | 一种集成凸块状肖特基二极管的碳化硅mosfet器件元胞结构 |
KR102563890B1 (ko) * | 2018-10-05 | 2023-08-10 | 한국전기연구원 | SiC 반도체의 깊은 준위 결함 제거 방법 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4837227B1 (hu) * | 1968-12-20 | 1973-11-09 | ||
FR2077474B1 (hu) * | 1969-12-24 | 1973-10-19 | Labo Electronique Physique | |
GB1558506A (en) * | 1976-08-09 | 1980-01-03 | Mullard Ltd | Semiconductor devices having a rectifying metalto-semicondductor junction |
JPS5378788A (en) * | 1976-12-23 | 1978-07-12 | Hitachi Ltd | Temperature-compensation-type constant voltage element |
JPS5394767A (en) * | 1977-01-31 | 1978-08-19 | Hitachi Ltd | Manufacture of semiconductor device |
JPS5555578A (en) * | 1978-10-18 | 1980-04-23 | Matsushita Electronics Corp | Method of fabricating schottky barrier type semiconductor device |
JPS6084878A (ja) * | 1983-10-17 | 1985-05-14 | Hitachi Ltd | 負性抵抗特性をもつ半導体装置およびその製造方法 |
CA1285334C (en) * | 1987-01-13 | 1991-06-25 | Rick C. Jerome | Schottky barrier diode with highly doped surface region |
JPH03276679A (ja) * | 1990-03-26 | 1991-12-06 | Yokogawa Electric Corp | ショットキーバリアダイオード |
JP2809826B2 (ja) * | 1990-06-29 | 1998-10-15 | 三菱電機株式会社 | 半導体装置の製造方法 |
JPH08264811A (ja) * | 1995-03-27 | 1996-10-11 | Toshiba Corp | ショットキーバリアダイオード |
JPH09107072A (ja) * | 1995-10-12 | 1997-04-22 | Fujitsu Ltd | 半導体装置およびその製造方法 |
DE19705728C2 (de) * | 1997-02-14 | 1999-01-21 | Gen Semiconductor Ireland Macr | Schottky-Diode und Verfahren zu deren Herstellung |
JP2950282B2 (ja) * | 1997-04-24 | 1999-09-20 | 日本電気株式会社 | 半導体装置の製造方法 |
JP3983306B2 (ja) * | 1997-09-03 | 2007-09-26 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | ショットキー接合を有する半導体装置の製造方法 |
JP2000252479A (ja) * | 1999-03-01 | 2000-09-14 | Fuji Electric Co Ltd | ショットキーバリアダイオードおよびその製造方法 |
JP3627572B2 (ja) * | 1999-05-13 | 2005-03-09 | 松下電器産業株式会社 | ショットキバリアダイオード |
-
1999
- 1999-07-03 DE DE19930781A patent/DE19930781B4/de not_active Expired - Fee Related
-
2000
- 2000-06-03 WO PCT/DE2000/001812 patent/WO2001003204A1/de active IP Right Grant
- 2000-06-03 EP EP00951204A patent/EP1198844B1/de not_active Expired - Lifetime
- 2000-06-03 CZ CZ20026A patent/CZ20026A3/cs unknown
- 2000-06-03 US US10/030,309 patent/US6727525B1/en not_active Expired - Fee Related
- 2000-06-03 DE DE50014143T patent/DE50014143D1/de not_active Expired - Lifetime
- 2000-06-03 HU HU0201871A patent/HUP0201871A2/hu unknown
- 2000-06-03 JP JP2001508515A patent/JP2003504855A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2003504855A (ja) | 2003-02-04 |
DE50014143D1 (de) | 2007-04-19 |
US6727525B1 (en) | 2004-04-27 |
DE19930781B4 (de) | 2006-10-12 |
WO2001003204A1 (de) | 2001-01-11 |
EP1198844A1 (de) | 2002-04-24 |
CZ20026A3 (cs) | 2002-05-15 |
DE19930781A1 (de) | 2001-01-11 |
EP1198844B1 (de) | 2007-03-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD9A | Lapse of provisional protection due to non-payment of fees |