HK1209914A1 - 具備防逆向工程特色之半導體裝置 - Google Patents

具備防逆向工程特色之半導體裝置

Info

Publication number
HK1209914A1
HK1209914A1 HK15110403.3A HK15110403A HK1209914A1 HK 1209914 A1 HK1209914 A1 HK 1209914A1 HK 15110403 A HK15110403 A HK 15110403A HK 1209914 A1 HK1209914 A1 HK 1209914A1
Authority
HK
Hong Kong
Prior art keywords
features
semiconductor device
reverse engineering
prevent reverse
engineering
Prior art date
Application number
HK15110403.3A
Other languages
English (en)
Inventor
Iii William Eli Thacker
Robert Francis Tenczar
Michael Clinton Hoke
Original Assignee
Verisiti Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Verisiti Inc filed Critical Verisiti Inc
Publication of HK1209914A1 publication Critical patent/HK1209914A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/57—Protection from inspection, reverse engineering or tampering
    • H01L23/573—Protection from inspection, reverse engineering or tampering using passive means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
HK15110403.3A 2012-10-30 2015-10-22 具備防逆向工程特色之半導體裝置 HK1209914A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/663,921 US9287879B2 (en) 2011-06-07 2012-10-30 Semiconductor device having features to prevent reverse engineering
PCT/US2012/069819 WO2014070216A1 (en) 2012-10-30 2012-12-14 Semiconductor device having features to prevent reverse engineering

Publications (1)

Publication Number Publication Date
HK1209914A1 true HK1209914A1 (zh) 2016-04-08

Family

ID=50628284

Family Applications (1)

Application Number Title Priority Date Filing Date
HK15110403.3A HK1209914A1 (zh) 2012-10-30 2015-10-22 具備防逆向工程特色之半導體裝置

Country Status (10)

Country Link
US (2) US9287879B2 (zh)
EP (1) EP2915257B1 (zh)
CN (2) CN110783329A (zh)
AP (1) AP2015008487A0 (zh)
BR (1) BR112015009523A2 (zh)
CA (1) CA2890031A1 (zh)
EA (1) EA201590755A1 (zh)
HK (1) HK1209914A1 (zh)
MX (1) MX344765B (zh)
WO (1) WO2014070216A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9287879B2 (en) * 2011-06-07 2016-03-15 Verisiti, Inc. Semiconductor device having features to prevent reverse engineering
US9218511B2 (en) * 2011-06-07 2015-12-22 Verisiti, Inc. Semiconductor device having features to prevent reverse engineering
US10262956B2 (en) 2017-02-27 2019-04-16 Cisco Technology, Inc. Timing based camouflage circuit
JP7109755B2 (ja) * 2018-02-15 2022-08-01 株式会社吉川システック 半導体装置

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4376947A (en) * 1979-09-04 1983-03-15 Texas Instruments Incorporated Electrically programmable floating gate semiconductor memory device
US4583011A (en) * 1983-11-01 1986-04-15 Standard Microsystems Corp. Circuit to prevent pirating of an MOS circuit
JPS60257145A (ja) * 1984-06-01 1985-12-18 Hitachi Ltd 半導体装置の試験法
US4933898A (en) 1989-01-12 1990-06-12 General Instrument Corporation Secure integrated circuit chip with conductive shield
US5065200A (en) * 1989-12-21 1991-11-12 Bell Communications Research, Inc. Geometry dependent doping and electronic devices produced thereby
EP0940851B1 (en) * 1992-07-31 2005-10-05 Hughes Electronics Corporation Integrated circuit security system and method with implanted interconnections
US5783846A (en) 1995-09-22 1998-07-21 Hughes Electronics Corporation Digital circuit with transistor geometry and channel stops providing camouflage against reverse engineering
US5923212A (en) * 1997-05-12 1999-07-13 Philips Electronics North America Corporation Bias generator for a low current divider
US5999019A (en) * 1997-10-10 1999-12-07 The Research Foundation Of State University Of New York Fast CMOS logic circuit with critical voltage transition logic
US6498851B1 (en) * 1998-11-25 2002-12-24 Sandisk Corporation Data encryption and signal scrambling using programmable data conversion arrays
US6326675B1 (en) * 1999-03-18 2001-12-04 Philips Semiconductor, Inc. Semiconductor device with transparent link area for silicide applications and fabrication thereof
US6117762A (en) 1999-04-23 2000-09-12 Hrl Laboratories, Llc Method and apparatus using silicide layer for protecting integrated circuits from reverse engineering
US6815816B1 (en) 2000-10-25 2004-11-09 Hrl Laboratories, Llc Implanted hidden interconnections in a semiconductor device for preventing reverse engineering
US7294935B2 (en) 2001-01-24 2007-11-13 Hrl Laboratories, Llc Integrated circuits protected against reverse engineering and method for fabricating the same using an apparent metal contact line terminating on field oxide
US20020096744A1 (en) 2001-01-24 2002-07-25 Hrl Laboratories, Llc Integrated circuits protected against reverse engineering and method for fabricating the same using etched passivation openings in integrated circuits
US7135734B2 (en) * 2001-08-30 2006-11-14 Micron Technology, Inc. Graded composition metal oxide tunnel barrier interpoly insulators
JP4044446B2 (ja) * 2002-02-19 2008-02-06 セイコーインスツル株式会社 半導体装置およびその製造方法
US6897535B2 (en) 2002-05-14 2005-05-24 Hrl Laboratories, Llc Integrated circuit with reverse engineering protection
US6998722B2 (en) * 2002-07-08 2006-02-14 Viciciv Technology Semiconductor latches and SRAM devices
US6855988B2 (en) * 2002-07-08 2005-02-15 Viciciv Technology Semiconductor switching devices
US7049667B2 (en) 2002-09-27 2006-05-23 Hrl Laboratories, Llc Conductive channel pseudo block process and circuit to inhibit reverse engineering
US7197647B1 (en) 2002-09-30 2007-03-27 Carnegie Mellon University Method of securing programmable logic configuration data
US6979606B2 (en) 2002-11-22 2005-12-27 Hrl Laboratories, Llc Use of silicon block process step to camouflage a false transistor
KR20050011317A (ko) 2003-07-22 2005-01-29 삼성전자주식회사 리버스 엔지니어링 방지수단을 구비하는 반도체 집적회로및 이의 리버스 엔지니어링 방지방법
US7115460B2 (en) * 2003-09-04 2006-10-03 Taiwan Semiconductor Manufacturing Company, Ltd. Standard cell back bias architecture
CN100372028C (zh) * 2003-10-24 2008-02-27 上海宏力半导体制造有限公司 半导体电阻元件及其制造方法
US7262457B2 (en) * 2004-01-05 2007-08-28 Ememory Technology Inc. Non-volatile memory cell
US7060566B2 (en) * 2004-06-22 2006-06-13 Infineon Technologies Ag Standby current reduction over a process window with a trimmable well bias
US20060166457A1 (en) * 2005-01-21 2006-07-27 Liu Sarah X Method of making transistors and non-silicided polysilicon resistors for mixed signal circuits
JP4817984B2 (ja) * 2006-06-20 2011-11-16 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
US8084855B2 (en) 2006-08-23 2011-12-27 Rockwell Collins, Inc. Integrated circuit tampering protection and reverse engineering prevention coatings and methods
US8168487B2 (en) 2006-09-28 2012-05-01 Hrl Laboratories, Llc Programmable connection and isolation of active regions in an integrated circuit using ambiguous features to confuse a reverse engineer
US7596775B2 (en) 2007-05-22 2009-09-29 United Microelectronics Corp. Method for determining a standard cell for IC design
US7994042B2 (en) * 2007-10-26 2011-08-09 International Business Machines Corporation Techniques for impeding reverse engineering
FR2931289A1 (fr) * 2008-05-13 2009-11-20 St Microelectronics Rousset Memoire a structure du type eeprom et a lecture seule
US20100078727A1 (en) * 2008-10-01 2010-04-01 Min Byoung W eFuse and Resistor Structures and Method for Forming Same in Active Region
US7989918B2 (en) 2009-01-26 2011-08-02 International Business Machines Corporation Implementing tamper evident and resistant detection through modulation of capacitance
US8151235B2 (en) 2009-02-24 2012-04-03 Syphermedia International, Inc. Camouflaging a standard cell based integrated circuit
US8510700B2 (en) * 2009-02-24 2013-08-13 Syphermedia International, Inc. Method and apparatus for camouflaging a standard cell based integrated circuit with micro circuits and post processing
US8418091B2 (en) 2009-02-24 2013-04-09 Syphermedia International, Inc. Method and apparatus for camouflaging a standard cell based integrated circuit
US8111089B2 (en) * 2009-05-28 2012-02-07 Syphermedia International, Inc. Building block for a secure CMOS logic cell library
EP2489127B1 (en) 2009-10-14 2022-11-30 Chaologix, Inc. High utilization universal logic array with variable circuit topology and logistic map circuit to realize a variety of logic gates with constant power signatures
US8759872B2 (en) * 2010-06-22 2014-06-24 Suvolta, Inc. Transistor with threshold voltage set notch and method of fabrication thereof
FR2967810B1 (fr) * 2010-11-18 2012-12-21 St Microelectronics Rousset Procede de fabrication d'un circuit integre protege contre l'ingenierie inverse
US8975748B1 (en) * 2011-06-07 2015-03-10 Secure Silicon Layer, Inc. Semiconductor device having features to prevent reverse engineering
US9437555B2 (en) * 2011-06-07 2016-09-06 Verisiti, Inc. Semiconductor device having features to prevent reverse engineering
US20120313664A1 (en) * 2011-06-07 2012-12-13 Static Control Components, Inc. Semiconductor Device Having Features to Prevent Reverse Engineering
US9218511B2 (en) * 2011-06-07 2015-12-22 Verisiti, Inc. Semiconductor device having features to prevent reverse engineering
US9287879B2 (en) * 2011-06-07 2016-03-15 Verisiti, Inc. Semiconductor device having features to prevent reverse engineering
US20150071434A1 (en) * 2011-06-07 2015-03-12 Static Control Components, Inc. Secure Semiconductor Device Having Features to Prevent Reverse Engineering

Also Published As

Publication number Publication date
CN105324940A (zh) 2016-02-10
EP2915257B1 (en) 2020-07-01
US20170062425A1 (en) 2017-03-02
MX344765B (es) 2016-12-01
CN110783329A (zh) 2020-02-11
CN105324940B (zh) 2020-02-14
EP2915257A1 (en) 2015-09-09
MX2015005339A (es) 2015-08-13
BR112015009523A2 (pt) 2018-05-22
US9287879B2 (en) 2016-03-15
EA201590755A1 (ru) 2015-10-30
CA2890031A1 (en) 2014-05-08
EP2915257A4 (en) 2016-12-14
WO2014070216A1 (en) 2014-05-08
AP2015008487A0 (en) 2015-05-31
US20130154687A1 (en) 2013-06-20

Similar Documents

Publication Publication Date Title
TWI562361B (en) Semiconductor device
EP2824703A4 (en) SEMICONDUCTOR DEVICE
EP2908338A4 (en) SEMICONDUCTOR COMPONENT
SG10201610711UA (en) Semiconductor device
EP2814059A4 (en) SEMICONDUCTOR DEVICE
SG10201605470SA (en) Semiconductor device
EP2804212A4 (en) SEMICONDUCTOR DEVICE
EP2866250A4 (en) SEMICONDUCTOR DEVICE
EP2814060A4 (en) SEMICONDUCTOR COMPONENT
EP2704189A4 (en) SEMICONDUCTOR DEVICE
EP2827364A4 (en) SEMICONDUCTOR COMPONENT
EP2922092A4 (en) SEMICONDUCTOR DEVICE
GB201506501D0 (en) Semiconductor device
TWI560880B (en) Semiconductor device
AP2015008587A0 (en) Semiconductor device having features to prevent reverse engineering
EP2822039A4 (en) SEMICONDUCTOR DEVICE
EP2887401A4 (en) SEMICONDUCTOR DEVICE
HK1243823A1 (zh) 半導體裝置
EP2790323A4 (en) SEMICONDUCTOR DEVICE
EP2940726A4 (en) SEMICONDUCTOR DEVICE
EP2871676A4 (en) SEMICONDUCTOR COMPONENT
EP2924739A4 (en) SEMICONDUCTOR DEVICE
AP2015008586A0 (en) Semiconductor device having features to prevent reverse engineering
EP2899756A4 (en) SEMICONDUCTOR DEVICE
EP2903114A4 (en) SEMICONDUCTOR DEVICE