HK1205592A1 - 半導體器件和電子器件 - Google Patents

半導體器件和電子器件

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Publication number
HK1205592A1
HK1205592A1 HK15105949.4A HK15105949A HK1205592A1 HK 1205592 A1 HK1205592 A1 HK 1205592A1 HK 15105949 A HK15105949 A HK 15105949A HK 1205592 A1 HK1205592 A1 HK 1205592A1
Authority
HK
Hong Kong
Prior art keywords
devices
semiconductor
electronic
electronic devices
semiconductor devices
Prior art date
Application number
HK15105949.4A
Other languages
English (en)
Chinese (zh)
Inventor
武藤晃
小池信也
小辻雅揮
成田幸弘
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of HK1205592A1 publication Critical patent/HK1205592A1/xx

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
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    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49537—Plurality of lead frames mounted in one device
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    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
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    • H01L23/49551—Cross section geometry characterised by bent parts
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    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Inverter Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
HK15105949.4A 2013-06-14 2015-06-23 半導體器件和電子器件 HK1205592A1 (zh)

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Families Citing this family (21)

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Publication number Priority date Publication date Assignee Title
JP6354392B2 (ja) * 2014-07-03 2018-07-11 株式会社デンソー 半導体装置
JP6318064B2 (ja) 2014-09-25 2018-04-25 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN108028242B (zh) * 2015-09-30 2021-08-17 敏捷电源开关三维集成Apsi3D 包括附加迹线的半导体功率器件及制造半导体功率器件的方法
JP6580015B2 (ja) 2016-10-05 2019-09-25 三菱電機株式会社 モールド樹脂封止型パワー半導体装置
WO2018237199A1 (en) 2017-06-22 2018-12-27 Renesas Electronics America Inc. Solid top terminal for discrete power devices
US10204844B1 (en) * 2017-11-16 2019-02-12 Semiconductor Components Industries, Llc Clip for semiconductor package
JP6743802B2 (ja) * 2017-11-22 2020-08-19 Tdk株式会社 半導体装置
EP3489994B1 (en) * 2017-11-28 2020-08-26 Mitsubishi Electric R & D Centre Europe B.V. Device and a method and a system for allowing the restoration of an interconnection of a die of a power module
JP7067205B2 (ja) * 2018-04-02 2022-05-16 富士電機株式会社 半導体装置
TWI671877B (zh) * 2018-04-24 2019-09-11 財團法人工業技術研究院 半導體封裝結構
US11735506B2 (en) * 2018-05-15 2023-08-22 Texas Instruments Incorporated Packages with multiple exposed pads
JP7155990B2 (ja) * 2018-12-17 2022-10-19 株式会社デンソー 半導体モジュール
US11073572B2 (en) * 2019-01-17 2021-07-27 Infineon Technologies Ag Current sensor device with a routable molded lead frame
US20200235067A1 (en) * 2019-01-22 2020-07-23 Texas Instruments Incorporated Electronic device flip chip package with exposed clip
US11069640B2 (en) 2019-06-14 2021-07-20 Cree Fayetteville, Inc. Package for power electronics
JPWO2021229995A1 (ko) * 2020-05-14 2021-11-18
US11373941B2 (en) * 2020-10-12 2022-06-28 Renesas Electronics Corporation Sense MOSFET electrically connected to a source pad via a plurality of source extraction ports
DE102022207269A1 (de) 2022-07-18 2024-01-18 Zf Friedrichshafen Ag Verfahren und Vorrichtung zum Herstellen einer Anschlussvorrichtung zum Anschließen zumindest eines elektrischen oder elektronischen Bauteils für ein elektrisches oder elektronisches Modul
CN115101423A (zh) * 2022-08-19 2022-09-23 泸州龙芯微科技有限公司 一种igbt的封装方法以及封装结构
CN115841943A (zh) * 2023-02-23 2023-03-24 淄博美林电子有限公司 栅极边缘化igbt芯片的制作方法及结构
JP2024129582A (ja) 2023-03-13 2024-09-27 ルネサスエレクトロニクス株式会社 半導体装置、半導体装置の製造方法およびチップセットの提供方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4409064B2 (ja) * 2000-07-14 2010-02-03 三菱電機株式会社 パワー素子を含む半導体装置
JP2002110889A (ja) * 2000-09-28 2002-04-12 Hitachi Ltd 半導体装置及びその製造方法
JP4601874B2 (ja) 2001-07-30 2010-12-22 三菱電機株式会社 半導体装置
US6975023B2 (en) * 2002-09-04 2005-12-13 International Rectifier Corporation Co-packaged control circuit, transistor and inverted diode
JP4479453B2 (ja) 2004-10-01 2010-06-09 三菱電機株式会社 電力半導体装置
JP2007235004A (ja) * 2006-03-03 2007-09-13 Mitsubishi Electric Corp 半導体装置
JP5232367B2 (ja) 2006-07-12 2013-07-10 ルネサスエレクトロニクス株式会社 半導体装置
JP5390064B2 (ja) 2006-08-30 2014-01-15 ルネサスエレクトロニクス株式会社 半導体装置
JP4900148B2 (ja) * 2007-09-13 2012-03-21 三菱電機株式会社 半導体装置
JP2009206140A (ja) * 2008-02-26 2009-09-10 Sumitomo Electric Ind Ltd パワーモジュール
JP4576448B2 (ja) 2008-07-18 2010-11-10 三菱電機株式会社 電力用半導体装置
JP2010050395A (ja) * 2008-08-25 2010-03-04 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2011086889A (ja) 2009-10-19 2011-04-28 Renesas Electronics Corp 半導体装置およびその製造方法
JP5481161B2 (ja) * 2009-10-30 2014-04-23 ルネサスエレクトロニクス株式会社 半導体装置および電源装置
JP5921055B2 (ja) * 2010-03-08 2016-05-24 ルネサスエレクトロニクス株式会社 半導体装置
JP2010192930A (ja) * 2010-04-30 2010-09-02 Rohm Co Ltd アイランド露出型半導体装置
JP2012069764A (ja) * 2010-09-24 2012-04-05 On Semiconductor Trading Ltd 回路装置およびその製造方法
JP5706251B2 (ja) 2011-06-30 2015-04-22 ルネサスエレクトロニクス株式会社 半導体装置
JP5823798B2 (ja) * 2011-09-29 2015-11-25 ルネサスエレクトロニクス株式会社 半導体装置
US8970020B2 (en) 2011-09-30 2015-03-03 Rohm Co., Ltd. Semiconductor device

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KR20140145994A (ko) 2014-12-24
US9997620B2 (en) 2018-06-12
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