HK1171567A1 - Light guide array for an image sensor - Google Patents
Light guide array for an image sensorInfo
- Publication number
- HK1171567A1 HK1171567A1 HK12112027.8A HK12112027A HK1171567A1 HK 1171567 A1 HK1171567 A1 HK 1171567A1 HK 12112027 A HK12112027 A HK 12112027A HK 1171567 A1 HK1171567 A1 HK 1171567A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- colour filter
- interface
- air gap
- light guide
- image sensor
- Prior art date
Links
- 239000007787 solid Substances 0.000 abstract 3
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
- G02B6/423—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements using guiding surfaces for the alignment
Abstract
An image sensor pixel 100 comprises a photoelectric conversion unit 102 supported by a substrate 106; a colour filter 114 disposed over the photoelectric conversion unit 102; and an air gap 422 on a lateral side of said colour filter, wherein a solid structure 134 is provided below the colour filter, the solid structure 134 having an interface with the colour filter 114, such that the interface is tilted towards the colour filter 114, the solid structure 134 acting to anchor the colour filter 114. Also disclosed is a method for producing an image sensor pixel 100, wherein a colour filter 114 is formed over a substrate, laterally adjacent to a wall, wherein the wall 134 is partially removed to define an air gap 422, wherein a portion of an interface between the colour filter 114 and the wall 134 is tilted towards the colour filter 114. The air interface improves the internal reflection of the cascaded light guide 130. The cascaded light guide 130 includes the self-aligned colour filter 114 having air-gaps 422 between adjacent colour filters. The concave air gap 422 interface diverges light that crosses the concave surface into the air gap 422 away from the air gap 422 into adjacent colour filters. These characteristics of the light guide eliminate the need for a microlens.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/806,192 US20110031381A1 (en) | 2007-12-28 | 2009-07-02 | Light guide array for an image sensor |
PCT/IB2009/006148 WO2011001196A1 (en) | 2009-07-02 | 2009-07-02 | Light guide array for an image sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1171567A1 true HK1171567A1 (en) | 2013-03-28 |
Family
ID=45218963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK12112027.8A HK1171567A1 (en) | 2009-07-02 | 2012-11-23 | Light guide array for an image sensor |
Country Status (2)
Country | Link |
---|---|
GB (2) | GB2481651B (en) |
HK (1) | HK1171567A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6173259B2 (en) * | 2014-06-02 | 2017-08-02 | キヤノン株式会社 | Photoelectric conversion device and imaging system |
JP6444066B2 (en) | 2014-06-02 | 2018-12-26 | キヤノン株式会社 | Photoelectric conversion device and imaging system |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003103087A2 (en) * | 2002-06-04 | 2003-12-11 | Skycross, Inc. | Wideband printed monopole antenna |
JP4310093B2 (en) * | 2002-10-09 | 2009-08-05 | キヤノン株式会社 | Manufacturing method of solid-state imaging device |
US8139131B2 (en) * | 2005-01-18 | 2012-03-20 | Panasonic Corporation | Solid state imaging device and fabrication method thereof, and camera incorporating the solid state imaging device |
JP4771466B2 (en) * | 2005-11-10 | 2011-09-14 | パナソニック株式会社 | Solid-state imaging device and manufacturing method thereof |
JP4821415B2 (en) * | 2006-04-19 | 2011-11-24 | 凸版印刷株式会社 | Color image sensor manufacturing method |
KR101550866B1 (en) * | 2009-02-09 | 2015-09-08 | 삼성전자주식회사 | Method for manufacturing a image sensor by filling a upper part of dielectric trench and forming air gap to improve optical cross-talk |
-
2009
- 2009-07-02 GB GB1011222.5A patent/GB2481651B/en not_active Expired - Fee Related
- 2009-07-02 GB GB1203302.3A patent/GB2486361B/en not_active Expired - Fee Related
-
2012
- 2012-11-23 HK HK12112027.8A patent/HK1171567A1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
GB201203302D0 (en) | 2012-04-11 |
GB2486361A (en) | 2012-06-13 |
GB201011222D0 (en) | 2010-08-18 |
GB2481651B (en) | 2012-10-10 |
GB2486361B (en) | 2012-10-10 |
GB2481651A (en) | 2012-01-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2007100876A3 (en) | Vertical tri-color sensor | |
EP2244296A3 (en) | Multilayer image sensor pixel structure for reducing crosstalk | |
USD626950S1 (en) | Optical adapter for mobile device | |
MY163865A (en) | Method of making wafer level optical elements | |
TW200715840A (en) | Solid-state imaging element | |
WO2008127249A3 (en) | Engine piston having an insulating air gap | |
TW200733370A (en) | CMOS image sensor with backside illumination and method for manufacturing the same | |
TW200735341A (en) | Color pixels with anti-blooming isolation and method of formation | |
TW200629886A (en) | Image sensor with embedded optical element | |
EP2604421A3 (en) | Methods of forming an ophthalmic lens precursor | |
EP2061081A3 (en) | Imaging apparatus and imaging method | |
EP2416361A3 (en) | Arrays for CMOS imagers and their method of manufacturing | |
TW200703564A (en) | Pixel with asymmetric transfer gate channel doping | |
WO2009151274A3 (en) | Rear illuminated image sensor and manufacturing method for same | |
TW200630237A (en) | Transparent substrate, electro-optical device, image forming device and method for manufacturing electro-optical device | |
EP2103988A3 (en) | Object recognizing display device | |
GB2484224B (en) | Color-optimized image sensor | |
EP1973168A3 (en) | Method for manufacturing solar cell by fracturing along a dividing groove and the corresponding solar cell | |
WO2006130519A3 (en) | Shared amplifier pixel with matched coupling capacitances | |
TW200729473A (en) | Method for fabricating image sensor without LTO-based passivation layer | |
TW200727501A (en) | Image sensor module and method for manufacturing the same | |
HK1171567A1 (en) | Light guide array for an image sensor | |
EP2487715A3 (en) | Solid-state image pickup device and method for manufacturing solid-state image pickup device | |
TW200735336A (en) | Reduced imager crosstalk and pixel noise using extended buried contacts | |
WO2007011558A3 (en) | Reflector for a double-pass photodetector |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20170702 |