HK1171567A1 - Light guide array for an image sensor - Google Patents

Light guide array for an image sensor

Info

Publication number
HK1171567A1
HK1171567A1 HK12112027.8A HK12112027A HK1171567A1 HK 1171567 A1 HK1171567 A1 HK 1171567A1 HK 12112027 A HK12112027 A HK 12112027A HK 1171567 A1 HK1171567 A1 HK 1171567A1
Authority
HK
Hong Kong
Prior art keywords
colour filter
interface
air gap
light guide
image sensor
Prior art date
Application number
HK12112027.8A
Inventor
Thanh-Trung Do
Hiok-Nam Tay
Original Assignee
Hiok-Nam Tay
Candela Microsystems S Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/806,192 external-priority patent/US20110031381A1/en
Priority claimed from PCT/IB2009/006148 external-priority patent/WO2011001196A1/en
Application filed by Hiok-Nam Tay, Candela Microsystems S Pte Ltd filed Critical Hiok-Nam Tay
Publication of HK1171567A1 publication Critical patent/HK1171567A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14621Colour filter arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • H01L27/14629Reflectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685Process for coatings or optical elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687Wafer level processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0203Containers; Encapsulations, e.g. encapsulation of photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4202Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4219Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4228Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
    • G02B6/423Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements using guiding surfaces for the alignment

Abstract

An image sensor pixel 100 comprises a photoelectric conversion unit 102 supported by a substrate 106; a colour filter 114 disposed over the photoelectric conversion unit 102; and an air gap 422 on a lateral side of said colour filter, wherein a solid structure 134 is provided below the colour filter, the solid structure 134 having an interface with the colour filter 114, such that the interface is tilted towards the colour filter 114, the solid structure 134 acting to anchor the colour filter 114. Also disclosed is a method for producing an image sensor pixel 100, wherein a colour filter 114 is formed over a substrate, laterally adjacent to a wall, wherein the wall 134 is partially removed to define an air gap 422, wherein a portion of an interface between the colour filter 114 and the wall 134 is tilted towards the colour filter 114. The air interface improves the internal reflection of the cascaded light guide 130. The cascaded light guide 130 includes the self-aligned colour filter 114 having air-gaps 422 between adjacent colour filters. The concave air gap 422 interface diverges light that crosses the concave surface into the air gap 422 away from the air gap 422 into adjacent colour filters. These characteristics of the light guide eliminate the need for a microlens.
HK12112027.8A 2009-07-02 2012-11-23 Light guide array for an image sensor HK1171567A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/806,192 US20110031381A1 (en) 2007-12-28 2009-07-02 Light guide array for an image sensor
PCT/IB2009/006148 WO2011001196A1 (en) 2009-07-02 2009-07-02 Light guide array for an image sensor

Publications (1)

Publication Number Publication Date
HK1171567A1 true HK1171567A1 (en) 2013-03-28

Family

ID=45218963

Family Applications (1)

Application Number Title Priority Date Filing Date
HK12112027.8A HK1171567A1 (en) 2009-07-02 2012-11-23 Light guide array for an image sensor

Country Status (2)

Country Link
GB (2) GB2481651B (en)
HK (1) HK1171567A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6173259B2 (en) * 2014-06-02 2017-08-02 キヤノン株式会社 Photoelectric conversion device and imaging system
JP6444066B2 (en) 2014-06-02 2018-12-26 キヤノン株式会社 Photoelectric conversion device and imaging system

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003103087A2 (en) * 2002-06-04 2003-12-11 Skycross, Inc. Wideband printed monopole antenna
JP4310093B2 (en) * 2002-10-09 2009-08-05 キヤノン株式会社 Manufacturing method of solid-state imaging device
US8139131B2 (en) * 2005-01-18 2012-03-20 Panasonic Corporation Solid state imaging device and fabrication method thereof, and camera incorporating the solid state imaging device
JP4771466B2 (en) * 2005-11-10 2011-09-14 パナソニック株式会社 Solid-state imaging device and manufacturing method thereof
JP4821415B2 (en) * 2006-04-19 2011-11-24 凸版印刷株式会社 Color image sensor manufacturing method
KR101550866B1 (en) * 2009-02-09 2015-09-08 삼성전자주식회사 Method for manufacturing a image sensor by filling a upper part of dielectric trench and forming air gap to improve optical cross-talk

Also Published As

Publication number Publication date
GB201203302D0 (en) 2012-04-11
GB2486361A (en) 2012-06-13
GB201011222D0 (en) 2010-08-18
GB2481651B (en) 2012-10-10
GB2486361B (en) 2012-10-10
GB2481651A (en) 2012-01-04

Similar Documents

Publication Publication Date Title
WO2007100876A3 (en) Vertical tri-color sensor
EP2244296A3 (en) Multilayer image sensor pixel structure for reducing crosstalk
USD626950S1 (en) Optical adapter for mobile device
MY163865A (en) Method of making wafer level optical elements
TW200715840A (en) Solid-state imaging element
WO2008127249A3 (en) Engine piston having an insulating air gap
TW200733370A (en) CMOS image sensor with backside illumination and method for manufacturing the same
TW200735341A (en) Color pixels with anti-blooming isolation and method of formation
TW200629886A (en) Image sensor with embedded optical element
EP2604421A3 (en) Methods of forming an ophthalmic lens precursor
EP2061081A3 (en) Imaging apparatus and imaging method
EP2416361A3 (en) Arrays for CMOS imagers and their method of manufacturing
TW200703564A (en) Pixel with asymmetric transfer gate channel doping
WO2009151274A3 (en) Rear illuminated image sensor and manufacturing method for same
TW200630237A (en) Transparent substrate, electro-optical device, image forming device and method for manufacturing electro-optical device
EP2103988A3 (en) Object recognizing display device
GB2484224B (en) Color-optimized image sensor
EP1973168A3 (en) Method for manufacturing solar cell by fracturing along a dividing groove and the corresponding solar cell
WO2006130519A3 (en) Shared amplifier pixel with matched coupling capacitances
TW200729473A (en) Method for fabricating image sensor without LTO-based passivation layer
TW200727501A (en) Image sensor module and method for manufacturing the same
HK1171567A1 (en) Light guide array for an image sensor
EP2487715A3 (en) Solid-state image pickup device and method for manufacturing solid-state image pickup device
TW200735336A (en) Reduced imager crosstalk and pixel noise using extended buried contacts
WO2007011558A3 (en) Reflector for a double-pass photodetector

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20170702