HK1099846A1 - A semiconductor concentric ring esd structure and method - Google Patents

A semiconductor concentric ring esd structure and method

Info

Publication number
HK1099846A1
HK1099846A1 HK07105640.6A HK07105640A HK1099846A1 HK 1099846 A1 HK1099846 A1 HK 1099846A1 HK 07105640 A HK07105640 A HK 07105640A HK 1099846 A1 HK1099846 A1 HK 1099846A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor
concentric ring
esd structure
ring esd
concentric
Prior art date
Application number
HK07105640.6A
Other languages
English (en)
Inventor
J Zdebel J Peter
Michelle Dow M Diann
Original Assignee
Semiconductor Components Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Components Ind filed Critical Semiconductor Components Ind
Publication of HK1099846A1 publication Critical patent/HK1099846A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
HK07105640.6A 2004-01-02 2007-05-29 A semiconductor concentric ring esd structure and method HK1099846A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/750,267 US7098509B2 (en) 2004-01-02 2004-01-02 High energy ESD structure and method
PCT/US2004/039718 WO2005069371A1 (en) 2004-01-02 2004-11-26 High energy esd structure and method

Publications (1)

Publication Number Publication Date
HK1099846A1 true HK1099846A1 (en) 2007-08-24

Family

ID=34711238

Family Applications (1)

Application Number Title Priority Date Filing Date
HK07105640.6A HK1099846A1 (en) 2004-01-02 2007-05-29 A semiconductor concentric ring esd structure and method

Country Status (7)

Country Link
US (1) US7098509B2 (ja)
JP (1) JP4943859B2 (ja)
KR (1) KR101099385B1 (ja)
CN (1) CN1894794B (ja)
HK (1) HK1099846A1 (ja)
TW (1) TWI362737B (ja)
WO (1) WO2005069371A1 (ja)

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US8039868B2 (en) 2008-12-23 2011-10-18 International Business Machines Corporation Structure and method for an electrostatic discharge (ESD) silicon controlled rectifier (SCR) structure
KR100945626B1 (ko) * 2009-10-14 2010-03-04 주식회사 케이이씨 과도 전압 억제 회로
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CN102983133B (zh) * 2012-11-28 2015-02-25 江南大学 一种双向三路径导通的高压esd保护器件
US9337178B2 (en) * 2012-12-09 2016-05-10 Semiconductor Components Industries, Llc Method of forming an ESD device and structure therefor
CN104020407B (zh) * 2013-03-01 2016-12-28 深圳市海洋王照明工程有限公司 一种集成电路静电防护性能的测试方法
US9252292B2 (en) * 2013-09-16 2016-02-02 Infineon Technologies Ag Semiconductor device and a method for forming a semiconductor device
TWI512934B (zh) * 2013-12-20 2015-12-11 Advanced Analog Technology Inc 用於靜電防護之半導體結構
CN104681621B (zh) * 2015-02-15 2017-10-24 上海华虹宏力半导体制造有限公司 一种源极抬高电压使用的高压ldmos及其制造方法
TWI553821B (zh) * 2015-05-29 2016-10-11 漢磊科技股份有限公司 靜電放電防護結構
US10217733B2 (en) 2015-09-15 2019-02-26 Semiconductor Components Industries, Llc Fast SCR structure for ESD protection
CN107331711B (zh) * 2017-07-26 2023-06-20 捷捷半导体有限公司 一种超低漏电水平的低压tvs器件及其制造方法
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TWI714489B (zh) * 2020-03-31 2020-12-21 新唐科技股份有限公司 半導體裝置以及半導體結構

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Also Published As

Publication number Publication date
US20050145945A1 (en) 2005-07-07
US7098509B2 (en) 2006-08-29
CN1894794B (zh) 2010-12-15
KR20060115756A (ko) 2006-11-09
CN1894794A (zh) 2007-01-10
JP2007518255A (ja) 2007-07-05
KR101099385B1 (ko) 2011-12-29
JP4943859B2 (ja) 2012-05-30
WO2005069371A1 (en) 2005-07-28
TW200524134A (en) 2005-07-16
TWI362737B (en) 2012-04-21

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20201126