HK1035261A1 - Method for producing semiconductor device. - Google Patents
Method for producing semiconductor device.Info
- Publication number
- HK1035261A1 HK1035261A1 HK01105954A HK01105954A HK1035261A1 HK 1035261 A1 HK1035261 A1 HK 1035261A1 HK 01105954 A HK01105954 A HK 01105954A HK 01105954 A HK01105954 A HK 01105954A HK 1035261 A1 HK1035261 A1 HK 1035261A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- wafer
- adhesive layer
- dicing
- die bond
- individual chips
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012790 adhesive layer Substances 0.000 abstract 7
- 238000005336 cracking Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H01L2224/27—Manufacturing methods
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- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34033499A JP4409014B2 (ja) | 1999-11-30 | 1999-11-30 | 半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1035261A1 true HK1035261A1 (en) | 2001-11-16 |
Family
ID=18335954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK01105954A HK1035261A1 (en) | 1999-11-30 | 2001-08-23 | Method for producing semiconductor device. |
Country Status (10)
Country | Link |
---|---|
US (1) | US6656819B1 (fr) |
EP (1) | EP1107299B1 (fr) |
JP (1) | JP4409014B2 (fr) |
KR (1) | KR100655035B1 (fr) |
CN (1) | CN1168132C (fr) |
DE (1) | DE60028912T2 (fr) |
HK (1) | HK1035261A1 (fr) |
MY (1) | MY125340A (fr) |
SG (1) | SG90205A1 (fr) |
TW (1) | TW487981B (fr) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4649745B2 (ja) * | 2001-02-01 | 2011-03-16 | ソニー株式会社 | 発光素子の転写方法 |
JP4669162B2 (ja) * | 2001-06-28 | 2011-04-13 | 株式会社ディスコ | 半導体ウェーハの分割システム及び分割方法 |
US6686225B2 (en) * | 2001-07-27 | 2004-02-03 | Texas Instruments Incorporated | Method of separating semiconductor dies from a wafer |
JP2003045901A (ja) * | 2001-08-01 | 2003-02-14 | Sony Corp | 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法 |
JP2003077940A (ja) * | 2001-09-06 | 2003-03-14 | Sony Corp | 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法 |
JP3892703B2 (ja) | 2001-10-19 | 2007-03-14 | 富士通株式会社 | 半導体基板用治具及びこれを用いた半導体装置の製造方法 |
TWI241674B (en) * | 2001-11-30 | 2005-10-11 | Disco Corp | Manufacturing method of semiconductor chip |
JP4055405B2 (ja) * | 2001-12-03 | 2008-03-05 | ソニー株式会社 | 電子部品及びその製造方法 |
US7042072B1 (en) * | 2002-08-02 | 2006-05-09 | Amkor Technology, Inc. | Semiconductor package and method of manufacturing the same which reduces warpage |
JP4307825B2 (ja) | 2002-08-28 | 2009-08-05 | リンテック株式会社 | 半導体ウエハの保護構造、半導体ウエハの保護方法、これらに用いる積層保護シートおよび半導体ウエハの加工方法 |
US7585703B2 (en) * | 2002-11-19 | 2009-09-08 | Ishikawa Seisakusho, Ltd. | Pixel control element selection transfer method, pixel control device mounting device used for pixel control element selection transfer method, wiring formation method after pixel control element transfer, and planar display substrate |
JP4599075B2 (ja) * | 2003-03-26 | 2010-12-15 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
JP2004311576A (ja) * | 2003-04-03 | 2004-11-04 | Toshiba Corp | 半導体装置の製造方法 |
JP2004319045A (ja) * | 2003-04-18 | 2004-11-11 | Lintec Corp | 光ディスク製造用シートおよび光ディスク |
JP4234630B2 (ja) * | 2003-05-29 | 2009-03-04 | 古河電気工業株式会社 | 貫通構造を有する薄膜化回路基板の製造方法と保護用粘着テープ |
MY142246A (en) * | 2003-06-10 | 2010-11-15 | Hitachi Chemical Co Ltd | Adhesive film and process for preparing the same as well as adhesive sheet and semiconductor device |
JP2005019571A (ja) * | 2003-06-24 | 2005-01-20 | Canon Inc | チップの実装方法及び実装基板の製造装置 |
GB2404280B (en) | 2003-07-03 | 2006-09-27 | Xsil Technology Ltd | Die bonding |
US20050023682A1 (en) * | 2003-07-31 | 2005-02-03 | Morio Nakao | High reliability chip scale package |
US7183137B2 (en) * | 2003-12-01 | 2007-02-27 | Taiwan Semiconductor Manufacturing Company | Method for dicing semiconductor wafers |
TWI320583B (en) * | 2003-12-26 | 2010-02-11 | Advanced Semiconductor Eng | Process for backside grinding a bumped wafer |
JP4165467B2 (ja) * | 2004-07-12 | 2008-10-15 | セイコーエプソン株式会社 | ダイシングシート、半導体装置の製造方法 |
JP4690697B2 (ja) * | 2004-11-01 | 2011-06-01 | 古河電気工業株式会社 | 半導体チップの製造方法 |
TWI287838B (en) * | 2004-11-11 | 2007-10-01 | Yamaha Corp | Semiconductor device, semiconductor wafer, chip size package, and methods of manufacturing and inspection therefor |
US8124455B2 (en) * | 2005-04-02 | 2012-02-28 | Stats Chippac Ltd. | Wafer strength reinforcement system for ultra thin wafer thinning |
TWI267133B (en) * | 2005-06-03 | 2006-11-21 | Touch Micro System Tech | Method of segmenting a wafer |
CN100382281C (zh) * | 2005-06-14 | 2008-04-16 | 探微科技股份有限公司 | 晶片切割的方法 |
JP4791843B2 (ja) * | 2006-02-14 | 2011-10-12 | 株式会社ディスコ | 接着フィルム付きデバイスの製造方法 |
JP4874769B2 (ja) * | 2006-11-14 | 2012-02-15 | 株式会社東芝 | 表面保護テープ及びこの表面保護テープを用いた半導体装置の製造方法 |
SG148884A1 (en) * | 2007-06-15 | 2009-01-29 | Micron Technology Inc | Method and system for removing tape from substrates |
JP2009231779A (ja) * | 2008-03-25 | 2009-10-08 | Lintec Corp | 半導体装置の製造方法 |
JP4640498B2 (ja) * | 2008-12-11 | 2011-03-02 | ソニー株式会社 | 素子の転写方法、素子配置基板、並びにデバイス及びその製造方法 |
JP5426314B2 (ja) * | 2009-10-19 | 2014-02-26 | 株式会社ディスコ | 半導体デバイスの製造方法 |
KR101221871B1 (ko) * | 2009-12-07 | 2013-01-15 | 한국전자통신연구원 | 반도체 소자의 제조방법 |
CN102244039B (zh) * | 2010-05-11 | 2014-02-05 | 扬州杰利半导体有限公司 | 一种半导体晶片的裂片方法 |
JP5158896B2 (ja) * | 2010-08-09 | 2013-03-06 | 古河電気工業株式会社 | 半導体チップの製造方法 |
JP2013105834A (ja) * | 2011-11-11 | 2013-05-30 | Hitachi Chemical Co Ltd | 半導体装置の製造方法、半導体装置及び電子部品 |
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-
1999
- 1999-11-30 JP JP34033499A patent/JP4409014B2/ja not_active Expired - Lifetime
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2000
- 2000-11-24 DE DE60028912T patent/DE60028912T2/de not_active Expired - Lifetime
- 2000-11-24 EP EP00310466A patent/EP1107299B1/fr not_active Expired - Lifetime
- 2000-11-27 US US09/723,083 patent/US6656819B1/en not_active Expired - Lifetime
- 2000-11-27 KR KR1020000070870A patent/KR100655035B1/ko active IP Right Grant
- 2000-11-28 SG SG200006870A patent/SG90205A1/en unknown
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- 2000-11-29 TW TW089125281A patent/TW487981B/zh not_active IP Right Cessation
- 2000-11-30 CN CNB001350781A patent/CN1168132C/zh not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
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DE60028912T2 (de) | 2007-02-15 |
EP1107299B1 (fr) | 2006-06-21 |
SG90205A1 (en) | 2002-07-23 |
JP4409014B2 (ja) | 2010-02-03 |
EP1107299A2 (fr) | 2001-06-13 |
EP1107299A3 (fr) | 2004-06-16 |
CN1168132C (zh) | 2004-09-22 |
CN1298204A (zh) | 2001-06-06 |
JP2001156027A (ja) | 2001-06-08 |
KR100655035B1 (ko) | 2006-12-07 |
KR20010051970A (ko) | 2001-06-25 |
TW487981B (en) | 2002-05-21 |
DE60028912D1 (de) | 2006-08-03 |
US6656819B1 (en) | 2003-12-02 |
MY125340A (en) | 2006-07-31 |
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