HK1021071A1 - Substrate with conductor formed of low-resistance aluminum alloy - Google Patents
Substrate with conductor formed of low-resistance aluminum alloyInfo
- Publication number
- HK1021071A1 HK1021071A1 HK99106200A HK99106200A HK1021071A1 HK 1021071 A1 HK1021071 A1 HK 1021071A1 HK 99106200 A HK99106200 A HK 99106200A HK 99106200 A HK99106200 A HK 99106200A HK 1021071 A1 HK1021071 A1 HK 1021071A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- substrate
- low
- aluminum alloy
- conductor formed
- resistance aluminum
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Conductive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10078097A JP3346217B2 (ja) | 1997-04-04 | 1997-04-04 | 配線の形成方法および表示装置の製造方法 |
PCT/JP1998/001361 WO1998045881A1 (en) | 1997-04-04 | 1998-03-26 | Substrate with conductor formed of low-resistance aluminum alloy |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1021071A1 true HK1021071A1 (en) | 2000-05-26 |
Family
ID=14282987
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK99106200A HK1021071A1 (en) | 1997-04-04 | 1999-12-30 | Substrate with conductor formed of low-resistance aluminum alloy |
Country Status (10)
Country | Link |
---|---|
US (1) | US6320138B1 (de) |
EP (1) | EP0922301B1 (de) |
JP (1) | JP3346217B2 (de) |
KR (1) | KR100314865B1 (de) |
CN (1) | CN1224099C (de) |
CA (1) | CA2256378A1 (de) |
DE (1) | DE69831846T2 (de) |
HK (1) | HK1021071A1 (de) |
TW (1) | TW388187B (de) |
WO (1) | WO1998045881A1 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100421901B1 (ko) * | 1998-12-10 | 2004-04-17 | 엘지.필립스 엘시디 주식회사 | 반사형액정표시장치의반사판 |
TW444257B (en) * | 1999-04-12 | 2001-07-01 | Semiconductor Energy Lab | Semiconductor device and method for fabricating the same |
JP4674774B2 (ja) * | 1999-06-10 | 2011-04-20 | カシオ計算機株式会社 | 配線の製造方法及び表示装置の製造方法 |
US6710525B1 (en) * | 1999-10-19 | 2004-03-23 | Candescent Technologies Corporation | Electrode structure and method for forming electrode structure for a flat panel display |
KR100720087B1 (ko) * | 2000-07-31 | 2007-05-18 | 삼성전자주식회사 | 표시 소자용 배선 및 이를 이용한 박막 트랜지스터 기판및 그 제조 방법 |
JP3908552B2 (ja) * | 2001-03-29 | 2007-04-25 | Nec液晶テクノロジー株式会社 | 液晶表示装置及びその製造方法 |
JP3953330B2 (ja) | 2002-01-25 | 2007-08-08 | 三洋電機株式会社 | 表示装置 |
JP3723507B2 (ja) | 2002-01-29 | 2005-12-07 | 三洋電機株式会社 | 駆動回路 |
JP2003308030A (ja) | 2002-02-18 | 2003-10-31 | Sanyo Electric Co Ltd | 表示装置 |
JP2003332058A (ja) | 2002-03-05 | 2003-11-21 | Sanyo Electric Co Ltd | エレクトロルミネッセンスパネルおよびその製造方法 |
CN100517422C (zh) | 2002-03-07 | 2009-07-22 | 三洋电机株式会社 | 配线结构、其制造方法、以及光学设备 |
JP3837344B2 (ja) | 2002-03-11 | 2006-10-25 | 三洋電機株式会社 | 光学素子およびその製造方法 |
JP2006339666A (ja) * | 2002-12-19 | 2006-12-14 | Kobe Steel Ltd | アルミニウム合金膜形成用スパッタリングターゲット |
US7423347B2 (en) * | 2006-01-19 | 2008-09-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | In-situ deposition for cu hillock suppression |
JP5032687B2 (ja) * | 2010-09-30 | 2012-09-26 | 株式会社神戸製鋼所 | Al合金膜、Al合金膜を有する配線構造、およびAl合金膜の製造に用いられるスパッタリングターゲット |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5264388A (en) | 1988-05-16 | 1993-11-23 | Sumitomo Electric Industries, Inc. | Sintered body of aluminum nitride |
US5243202A (en) | 1990-04-25 | 1993-09-07 | Casio Computer Co., Ltd. | Thin-film transistor and a liquid crystal matrix display device using thin-film transistors of this type |
JPH04130776A (ja) | 1990-09-21 | 1992-05-01 | Casio Comput Co Ltd | 薄膜トランジスタ |
US5367179A (en) | 1990-04-25 | 1994-11-22 | Casio Computer Co., Ltd. | Thin-film transistor having electrodes made of aluminum, and an active matrix panel using same |
JP2733006B2 (ja) | 1993-07-27 | 1998-03-30 | 株式会社神戸製鋼所 | 半導体用電極及びその製造方法並びに半導体用電極膜形成用スパッタリングターゲット |
JP3707704B2 (ja) | 1995-03-08 | 2005-10-19 | 日本アイ・ビー・エム株式会社 | 配線材料、液晶ディスプレー装置、および配線層の形成方法 |
JP3213196B2 (ja) * | 1995-03-08 | 2001-10-02 | 日本アイ・ビー・エム株式会社 | 配線材料、金属配線層の形成方法 |
JPH09127551A (ja) * | 1995-10-31 | 1997-05-16 | Sharp Corp | 半導体装置およびアクティブマトリクス基板 |
-
1997
- 1997-04-04 JP JP10078097A patent/JP3346217B2/ja not_active Expired - Fee Related
-
1998
- 1998-03-25 US US09/047,693 patent/US6320138B1/en not_active Expired - Fee Related
- 1998-03-26 CA CA002256378A patent/CA2256378A1/en not_active Abandoned
- 1998-03-26 KR KR1019980709822A patent/KR100314865B1/ko not_active IP Right Cessation
- 1998-03-26 CN CNB988004151A patent/CN1224099C/zh not_active Expired - Fee Related
- 1998-03-26 DE DE69831846T patent/DE69831846T2/de not_active Expired - Fee Related
- 1998-03-26 WO PCT/JP1998/001361 patent/WO1998045881A1/en active IP Right Grant
- 1998-03-26 EP EP98911030A patent/EP0922301B1/de not_active Expired - Lifetime
- 1998-04-03 TW TW087105072A patent/TW388187B/zh not_active IP Right Cessation
-
1999
- 1999-12-30 HK HK99106200A patent/HK1021071A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0922301A1 (de) | 1999-06-16 |
DE69831846D1 (de) | 2005-11-17 |
JPH10284493A (ja) | 1998-10-23 |
CN1223014A (zh) | 1999-07-14 |
DE69831846T2 (de) | 2006-05-18 |
TW388187B (en) | 2000-04-21 |
JP3346217B2 (ja) | 2002-11-18 |
KR100314865B1 (ko) | 2002-02-28 |
CA2256378A1 (en) | 1998-10-15 |
EP0922301B1 (de) | 2005-10-12 |
WO1998045881A1 (en) | 1998-10-15 |
KR20000016250A (ko) | 2000-03-25 |
CN1224099C (zh) | 2005-10-19 |
US6320138B1 (en) | 2001-11-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20090326 |