HK1014613A1 - Semiconductor device and semiconductor memory device - Google Patents

Semiconductor device and semiconductor memory device

Info

Publication number
HK1014613A1
HK1014613A1 HK98115932A HK98115932A HK1014613A1 HK 1014613 A1 HK1014613 A1 HK 1014613A1 HK 98115932 A HK98115932 A HK 98115932A HK 98115932 A HK98115932 A HK 98115932A HK 1014613 A1 HK1014613 A1 HK 1014613A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor
memory device
semiconductor memory
semiconductor device
memory
Prior art date
Application number
HK98115932A
Other languages
English (en)
Inventor
Masakazu Kimura
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63111032A external-priority patent/JPH01281761A/ja
Priority claimed from JP63115231A external-priority patent/JPH01283953A/ja
Priority claimed from JP63265303A external-priority patent/JPH0831533B2/ja
Priority claimed from JP63309127A external-priority patent/JP2800206B2/ja
Priority claimed from JP63309128A external-priority patent/JPH02155266A/ja
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of HK1014613A1 publication Critical patent/HK1014613A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3215—Doping the layers
    • H01L21/32155—Doping polycristalline - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
HK98115932A 1988-05-07 1998-12-28 Semiconductor device and semiconductor memory device HK1014613A1 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP63111032A JPH01281761A (ja) 1988-05-07 1988-05-07 半導体装置
JP63115231A JPH01283953A (ja) 1988-05-11 1988-05-11 半導体装置
JP63265303A JPH0831533B2 (ja) 1988-10-21 1988-10-21 半導体記憶装置
JP63309127A JP2800206B2 (ja) 1988-12-07 1988-12-07 半導体記憶装置
JP63309128A JPH02155266A (ja) 1988-12-07 1988-12-07 半導体記憶装置
PCT/JP1989/000433 WO1989011162A1 (en) 1988-05-07 1989-04-25 Semiconductor device and semiconductor memory device

Publications (1)

Publication Number Publication Date
HK1014613A1 true HK1014613A1 (en) 1999-09-30

Family

ID=27526471

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98115932A HK1014613A1 (en) 1988-05-07 1998-12-28 Semiconductor device and semiconductor memory device

Country Status (5)

Country Link
EP (1) EP0365690B1 (ko)
KR (1) KR940001252B1 (ko)
DE (1) DE68929121T2 (ko)
HK (1) HK1014613A1 (ko)
WO (1) WO1989011162A1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5210429A (en) * 1990-06-29 1993-05-11 Sharp Kabushiki Kaisha Static RAM cell with conductive straps formed integrally with thin film transistor gates
EP0465170B1 (en) * 1990-06-29 1997-01-08 Sharp Kabushiki Kaisha Static RAM cell
DE69229842T2 (de) * 1991-03-27 2000-04-20 Fujitsu Ltd. Halbleiterspeicheranordnung mit einem Dünnschichttransistor und Herstellungsmethode für selben
US5128738A (en) * 1991-05-16 1992-07-07 At&T Bell Laboratories Integrated circuit
TW222347B (en) * 1992-11-24 1994-04-11 American Telephone & Telegraph SRAM cell with balanced load resistors
JP2003045880A (ja) * 2001-07-31 2003-02-14 Mitsubishi Electric Corp 半導体装置及び半導体装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0087979B1 (en) * 1982-03-03 1989-09-06 Fujitsu Limited A semiconductor memory device
DE3569172D1 (en) * 1984-08-23 1989-05-03 Toshiba Kk Semiconductor memory device having a polycrystalline silicon layer
US4679171A (en) * 1985-02-07 1987-07-07 Visic, Inc. MOS/CMOS memory cell
JPS62112362A (ja) * 1985-11-11 1987-05-23 Toshiba Corp 半導体メモリのメモリセル構造
JPS62169472A (ja) * 1986-01-22 1987-07-25 Hitachi Ltd 半導体集積回路装置
JPH07112014B2 (ja) * 1986-07-09 1995-11-29 株式会社日立製作所 半導体記憶装置

Also Published As

Publication number Publication date
EP0365690A1 (en) 1990-05-02
KR940001252B1 (ko) 1994-02-18
DE68929121T2 (de) 2000-04-20
KR900702571A (ko) 1990-12-07
DE68929121D1 (de) 2000-01-27
EP0365690A4 (en) 1991-11-27
WO1989011162A1 (en) 1989-11-16
EP0365690B1 (en) 1999-12-22

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Legal Events

Date Code Title Description
PF Patent in force
PE Patent expired

Effective date: 20090424