GB983252A - Electrical circuits - Google Patents
Electrical circuitsInfo
- Publication number
- GB983252A GB983252A GB15723/61A GB1572361A GB983252A GB 983252 A GB983252 A GB 983252A GB 15723/61 A GB15723/61 A GB 15723/61A GB 1572361 A GB1572361 A GB 1572361A GB 983252 A GB983252 A GB 983252A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrodes
- stage
- type
- electrode
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 abstract 5
- 239000004065 semiconductor Substances 0.000 abstract 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000001143 conditioned effect Effects 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 230000001172 regenerating effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
- H03K23/002—Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/354—Astable circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2612660A | 1960-05-02 | 1960-05-02 | |
| US2613460A | 1960-05-02 | 1960-05-02 | |
| US26133A US3130378A (en) | 1960-05-02 | 1960-05-02 | Relaxation oscillator utilizing field-effect device |
| US26090A US3112411A (en) | 1960-05-02 | 1960-05-02 | Ring counter utilizing bipolar field-effect devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB983252A true GB983252A (en) | 1965-02-17 |
Family
ID=27487477
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB15723/61A Expired GB983252A (en) | 1960-05-02 | 1961-05-01 | Electrical circuits |
| GB23277/64A Expired GB983275A (en) | 1960-05-02 | 1961-05-01 | Semiconductor networks including field-effect and junction transistors |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB23277/64A Expired GB983275A (en) | 1960-05-02 | 1961-05-01 | Semiconductor networks including field-effect and junction transistors |
Country Status (7)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4209795A (en) * | 1976-12-06 | 1980-06-24 | Nippon Gakki Seizo Kabushiki Kaisha | Jsit-type field effect transistor with deep level channel doping |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL293447A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1962-05-31 | |||
| NL296208A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1962-08-03 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL83838C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1952-12-01 | 1957-01-15 | ||
| GB807582A (en) * | 1954-12-27 | 1959-01-21 | Clevite Corp | High power junction transistor |
| US2998534A (en) | 1958-09-04 | 1961-08-29 | Clevite Corp | Symmetrical junction transistor device and circuit |
| US2967793A (en) * | 1959-02-24 | 1961-01-10 | Westinghouse Electric Corp | Semiconductor devices with bi-polar injection characteristics |
-
0
- NL NL264274D patent/NL264274A/xx unknown
-
1961
- 1961-05-01 GB GB15723/61A patent/GB983252A/en not_active Expired
- 1961-05-01 GB GB23277/64A patent/GB983275A/en not_active Expired
- 1961-05-02 BE BE603266A patent/BE603266A/fr unknown
- 1961-05-02 DE DET20103A patent/DE1242690B/de active Pending
- 1961-05-02 DE DE1961T0033564 patent/DE1614797B2/de active Granted
- 1961-05-02 CH CH511461A patent/CH397873A/fr unknown
- 1961-05-02 FR FR860525A patent/FR1302417A/fr not_active Expired
-
1969
- 1969-12-31 MY MY1969298A patent/MY6900298A/xx unknown
- 1969-12-31 MY MY1969295A patent/MY6900295A/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4209795A (en) * | 1976-12-06 | 1980-06-24 | Nippon Gakki Seizo Kabushiki Kaisha | Jsit-type field effect transistor with deep level channel doping |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1614797A1 (de) | 1970-09-24 |
| DE1614797B2 (de) | 1976-08-12 |
| MY6900298A (en) | 1969-12-31 |
| BE603266A (fr) | 1961-11-03 |
| FR1302417A (fr) | 1962-08-31 |
| MY6900295A (en) | 1969-12-31 |
| CH397873A (fr) | 1965-08-31 |
| DE1242690B (de) | 1967-06-22 |
| GB983275A (en) | 1965-02-17 |
| NL264274A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1900-01-01 |
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