GB978488A - A process for the production of a layer of a semi-conducting ab compound by electrolytic deposition - Google Patents

A process for the production of a layer of a semi-conducting ab compound by electrolytic deposition

Info

Publication number
GB978488A
GB978488A GB2663161A GB2663161A GB978488A GB 978488 A GB978488 A GB 978488A GB 2663161 A GB2663161 A GB 2663161A GB 2663161 A GB2663161 A GB 2663161A GB 978488 A GB978488 A GB 978488A
Authority
GB
United Kingdom
Prior art keywords
iii
cathode
electrolyte
deposited
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2663161A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB978488A publication Critical patent/GB978488A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/007—Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D9/00—Electrolytic coating other than with metals
    • C25D9/04—Electrolytic coating other than with metals with inorganic materials
    • C25D9/08—Electrolytic coating other than with metals with inorganic materials by cathodic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02549—Antimonides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)

Abstract

978,488. Electrolytically depositing semiconducting A<SP>III</SP> B<SP>V</SP> compounds. SIEMENSSCHUCKERTWERKE A.G. July 21, 1961 [July 21, 1960], No. 26631/61. Heading C7B. In a process for the production of a layer of a semi-conducting A<SP>III</SP>B<SP>V</SP> compound by electrolytic decomposition, where A<SP>III</SP> is an element in Group III of the Perodic Table and B<SP>V</SP> is an element in Group V, the compound is deposited from a solution containing the ions of the elements A<SP>III</SP> and B<SP>V</SP> together with a complex forming agent, the pH being such that the complex of the nobler element is more stable than that of the less noble element, the potentials at which the elements are deposited from the complexes are similar and the hydrogen separation at the cathode is small at the impressed potentials. An electrolyte for depositing InSb comprises InCl 3 , SbCl 3 , NH 4 Cl, tartaric acid as a complexing agent, and gelatine for improving the surface quality of the deposited layer. The pH is adjusted to about 2À5 with concentrated NH 3 solution and the electrolysis may be carried out at 3À5 volts. Other specified compounds which may be prepared similarly are InBi, InAs, GaSb, GaAs, AlSb and AlAs. A series of layers consisting of different A<SP>III</SP>B<SP>V</SP> compounds may be deposited. A doping can be carried out during the deposition. In apparatus for carrying out the process cathode 4 and anode 16 spaces are connected by an electrolyte bridge 12 having diaphragms 13 and 14. The cathode 4, which is held in a stopper 8, comprises a ferrite wafer and electrical contact is made with it through a graphite cushion 5 and a spring pressed copper contact 6. In measuring the cathode potential, a calomel electrode 10 is used. The cathode space contains the deposition electrolyte whereas the bridge and anode space contain an electrolyte such as KNO 3 solution. Alternatively, the whole apparatus may contain the deposition electrolye. The cell can be freed from dissolved H 2 by the introduction of N 2 before electrolysis is started. An admission pipe 17 and exhaust duct 18 are for this purpose. A magnetic stirrer is provided at 19.
GB2663161A 1960-07-21 1961-07-21 A process for the production of a layer of a semi-conducting ab compound by electrolytic deposition Expired GB978488A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES69522A DE1121427B (en) 1960-07-21 1960-07-21 Process for the galvanic deposition of especially thin layers of semiconducting A B compounds

Publications (1)

Publication Number Publication Date
GB978488A true GB978488A (en) 1964-12-23

Family

ID=7501042

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2663161A Expired GB978488A (en) 1960-07-21 1961-07-21 A process for the production of a layer of a semi-conducting ab compound by electrolytic deposition

Country Status (5)

Country Link
BE (1) BE606242A (en)
CH (1) CH396216A (en)
DE (1) DE1121427B (en)
GB (1) GB978488A (en)
NL (1) NL267219A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2001102A (en) * 1977-07-01 1979-01-24 Oronzio De Nora Impianti Monopolar electrolytic diaphragm cells and anodes for such cells and to a method of inserting and removing the anodes into and out of the cells

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL297836A (en) * 1962-09-14
DE2810605C2 (en) * 1978-03-11 1980-03-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Electrolytic deposition process for the production of large-area semiconductor components

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2001102A (en) * 1977-07-01 1979-01-24 Oronzio De Nora Impianti Monopolar electrolytic diaphragm cells and anodes for such cells and to a method of inserting and removing the anodes into and out of the cells
GB2001102B (en) * 1977-07-01 1982-01-20 Oronzio De Nora Impianti Improvements relating to monopolar electrolytic diaphragm cells and anodes for such cells and to a method of inserting and removing the anodes into and out of the cells

Also Published As

Publication number Publication date
BE606242A (en) 1962-01-18
NL267219A (en)
CH396216A (en) 1965-07-31
DE1121427B (en) 1962-01-04

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