GB973073A - Improvements in or relating to semiconductor memory elements - Google Patents
Improvements in or relating to semiconductor memory elementsInfo
- Publication number
- GB973073A GB973073A GB1416660A GB1416660A GB973073A GB 973073 A GB973073 A GB 973073A GB 1416660 A GB1416660 A GB 1416660A GB 1416660 A GB1416660 A GB 1416660A GB 973073 A GB973073 A GB 973073A
- Authority
- GB
- United Kingdom
- Prior art keywords
- series
- transformer
- diode
- resistor
- tunnel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000003990 capacitor Substances 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000013500 data storage Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 238000004804 winding Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
- G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Electronic Switches (AREA)
Abstract
973, 073. Digital data storage. PLESSEY CO. Ltd. April 21, 1961 [April 22, 1960], No. 14166/60. Heading G4C. [Also in Division H3] A memory element comprises a tunnel diode connected in series with a load resistor to a D.C. source, and a readout wire which is transformer coupled to a conductor connected in series or parallel with the diode, the selection input also being applied by transformer coupling. In a first embodiment, Fig. 5, the transformer M is used for both selection and readout and is connected to the tunnel diode by a capacitor C. In a second embodiment Fig. 6 (not shown) the capacitor is omitted, and the transformer is connected between the tunnel diode and a second tunnel diode. In a modification, Fig. 7, a number of such circuits comprising tunnel diodes T, T<SP>1</SP> .. second tunnel diodes T 1 , T<SP>1</SP> 1 ... and transformers M, M<SP>1</SP> ... are connected in series with a common load resistor R. In a third embodiment, Fig. 10, the input is applied to a transformer M 2 connected in series with the tunnel diode T and resistor R and the output is taken from a second transformer M which has a further winding differentially connected to a resistor R 3 such that the phase of the output depends on whether the impedance of T is greater or less than R. The resistor R may be replaced by a conventional diode Fig. 12 (not shown). In further embodiments Figs. 14, 15 two outputs L1, L2 are connected one in series with the diode D and one in series with tunnel diode T, the input being applied to a further transformer M2 connected in series with resistor R, Fig. 14, or in series with a further tunnel diode T1, Fig. 15, connected in parallel with the output circuits.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1416660A GB973073A (en) | 1960-04-22 | 1960-04-22 | Improvements in or relating to semiconductor memory elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1416660A GB973073A (en) | 1960-04-22 | 1960-04-22 | Improvements in or relating to semiconductor memory elements |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB973073A true GB973073A (en) | 1964-10-21 |
Family
ID=10036192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1416660A Expired GB973073A (en) | 1960-04-22 | 1960-04-22 | Improvements in or relating to semiconductor memory elements |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB973073A (en) |
-
1960
- 1960-04-22 GB GB1416660A patent/GB973073A/en not_active Expired
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