GB972549A - Production of n-type silicon bodies and silicon bodies so produced - Google Patents

Production of n-type silicon bodies and silicon bodies so produced

Info

Publication number
GB972549A
GB972549A GB42098/60A GB4209860A GB972549A GB 972549 A GB972549 A GB 972549A GB 42098/60 A GB42098/60 A GB 42098/60A GB 4209860 A GB4209860 A GB 4209860A GB 972549 A GB972549 A GB 972549A
Authority
GB
United Kingdom
Prior art keywords
atoms
bombardment
silicon
produced
unstable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB42098/60A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB972549A publication Critical patent/GB972549A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F3/00—Changing the physical structure of non-ferrous metals or alloys by special physical methods, e.g. treatment with neutrons
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/165—Transmutation doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB42098/60A 1959-12-15 1960-12-07 Production of n-type silicon bodies and silicon bodies so produced Expired GB972549A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US859810A US3076732A (en) 1959-12-15 1959-12-15 Uniform n-type silicon

Publications (1)

Publication Number Publication Date
GB972549A true GB972549A (en) 1964-10-14

Family

ID=25331767

Family Applications (1)

Application Number Title Priority Date Filing Date
GB42098/60A Expired GB972549A (en) 1959-12-15 1960-12-07 Production of n-type silicon bodies and silicon bodies so produced

Country Status (5)

Country Link
US (1) US3076732A (en:Method)
DE (1) DE1154878B (en:Method)
FR (1) FR1278241A (en:Method)
GB (1) GB972549A (en:Method)
NL (1) NL258192A (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2183092A (en) * 1985-11-12 1987-05-28 Sony Corp Irradiating silicon crystals used for solid state image devices

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3255050A (en) * 1962-03-23 1966-06-07 Carl N Klahr Fabrication of semiconductor devices by transmutation doping
BE638518A (en:Method) * 1962-08-03
US3451864A (en) * 1965-12-06 1969-06-24 Ibm Method of growing doped semiconductor material from a source which includes an unstable isotope which decays to a dopant element
US3341754A (en) * 1966-01-20 1967-09-12 Ion Physics Corp Semiconductor resistor containing interstitial and substitutional ions formed by an ion implantation method
FR1562934A (fr) * 1967-01-20 1969-04-11 Fuji Shashin Film Kabushiki Kaisha Révélateur liquide et procédé de fabrication
DE2362264B2 (de) * 1973-12-14 1977-11-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von homogen n-dotierten siliciumeinkristallen durch bestrahlung mit thermischen neutronen
DE2356376A1 (de) * 1973-11-12 1975-05-15 Siemens Ag Verfahren zum herstellen von homogen dotierten siliciumeinkristallen mit n-leitfaehigkeit durch neutronenbestrahlung
DE2534460C2 (de) * 1975-08-01 1986-03-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Entfernung der Oberflächenkontamination bei durch Kernumwandlung dotiertem Halbleitermaterial
US4277307A (en) * 1977-10-17 1981-07-07 Siemens Aktiengesellschaft Method of restoring Si crystal lattice order after neutron irradiation
DE2753488C2 (de) * 1977-12-01 1986-06-19 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung von n-dotiertem Silicium durch Neutronenbestrahlung
RU2202655C1 (ru) * 2002-04-23 2003-04-20 Московский государственный институт стали и сплавов (технологический университет) Способ получения резистентного кремния
US20100289121A1 (en) * 2009-05-14 2010-11-18 Eric Hansen Chip-Level Access Control via Radioisotope Doping

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2183092A (en) * 1985-11-12 1987-05-28 Sony Corp Irradiating silicon crystals used for solid state image devices
GB2183092B (en) * 1985-11-12 1990-04-18 Sony Corp Solid-state image pick-up device with uniform distribution of dopant therein and production method therefor
AU597915B2 (en) * 1985-11-12 1990-06-14 Sony Corporation Solid-state image pick-up device with uniform distribution of dopant therein and production method therefor
AT399420B (de) * 1985-11-12 1995-05-26 Sony Corp Verfahren für die herstellung einer festkörper-bildaufnahmevorrichtung

Also Published As

Publication number Publication date
DE1154878B (de) 1963-09-26
US3076732A (en) 1963-02-05
FR1278241A (fr) 1961-12-08
NL258192A (en:Method)

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