GB9701928D0 - Method of fabricating a semiconductor memory device having tree-type capacitor - Google Patents

Method of fabricating a semiconductor memory device having tree-type capacitor

Info

Publication number
GB9701928D0
GB9701928D0 GBGB9701928.5A GB9701928A GB9701928D0 GB 9701928 D0 GB9701928 D0 GB 9701928D0 GB 9701928 A GB9701928 A GB 9701928A GB 9701928 D0 GB9701928 D0 GB 9701928D0
Authority
GB
United Kingdom
Prior art keywords
fabricating
tree
memory device
semiconductor memory
type capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB9701928.5A
Other versions
GB2323470A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to GB9701928A priority Critical patent/GB2323470A/en
Publication of GB9701928D0 publication Critical patent/GB9701928D0/en
Priority to NL1005631A priority patent/NL1005631C2/en
Publication of GB2323470A publication Critical patent/GB2323470A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
    • H01L28/88—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by patterning layers, e.g. by etching conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/92—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by patterning layers, e.g. by etching conductive layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
GB9701928A 1997-01-30 1997-01-30 Method of fabricating a stacked capacitor Withdrawn GB2323470A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB9701928A GB2323470A (en) 1997-01-30 1997-01-30 Method of fabricating a stacked capacitor
NL1005631A NL1005631C2 (en) 1997-01-30 1997-03-25 Semiconductor memory device.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9701928A GB2323470A (en) 1997-01-30 1997-01-30 Method of fabricating a stacked capacitor
NL1005631A NL1005631C2 (en) 1997-01-30 1997-03-25 Semiconductor memory device.

Publications (2)

Publication Number Publication Date
GB9701928D0 true GB9701928D0 (en) 1997-03-19
GB2323470A GB2323470A (en) 1998-09-23

Family

ID=26310896

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9701928A Withdrawn GB2323470A (en) 1997-01-30 1997-01-30 Method of fabricating a stacked capacitor

Country Status (2)

Country Link
GB (1) GB2323470A (en)
NL (1) NL1005631C2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10105686A1 (en) * 2001-02-08 2002-09-05 Infineon Technologies Ag Method for producing a capacitor arrangement for a semiconductor memory device
US10559568B1 (en) * 2018-09-10 2020-02-11 Nanya Technology Corporation Method for preparing semiconductor capacitor structure

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0338061A (en) * 1989-07-05 1991-02-19 Fujitsu Ltd Semiconductor memory
JP2886280B2 (en) * 1990-06-29 1999-04-26 宮城沖電気株式会社 Method for manufacturing semiconductor memory device
US5053351A (en) * 1991-03-19 1991-10-01 Micron Technology, Inc. Method of making stacked E-cell capacitor DRAM cell
KR0126623B1 (en) * 1994-08-03 1997-12-26 김주용 Method for fabricating capacitors of semiconductor device

Also Published As

Publication number Publication date
GB2323470A (en) 1998-09-23
NL1005631C2 (en) 1998-09-28

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)