GB876746A - Improvements in or relating to electro-magnetic radiation control devices - Google Patents
Improvements in or relating to electro-magnetic radiation control devicesInfo
- Publication number
- GB876746A GB876746A GB16489/58A GB1648958A GB876746A GB 876746 A GB876746 A GB 876746A GB 16489/58 A GB16489/58 A GB 16489/58A GB 1648958 A GB1648958 A GB 1648958A GB 876746 A GB876746 A GB 876746A
- Authority
- GB
- United Kingdom
- Prior art keywords
- absorption edge
- indium
- phosphide
- microns
- substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/0036—Magneto-optical materials
Abstract
876,746. Light-modulating devices. SIEMENSSCHUCKERTWERKE A.G. May 22, 1958 [May 28, 1957], No. 16489/58. Drawings to Specification. Class 40(3) A device for rotating the plane of polarization of electro-magneticradiationutilizing the Faraday effect comprises a semi-conductor substance having a steep absorption edge located as close as possible to the short wave limit of the radiation and means for applying a magnetic field to the substance. The substance may comprise: (1) an element from Group IV, such as germanium or silicon, (2) a compound of the A III B V type, such as indium antimonide (InSb), which has an absorption edge at 7 microns and is suitable for controlling infra-red radiation, or gallium phosphide (GaP), which has an absorption edge at 0À5 microns and is suitable for controlling visible light, or (3) a mixed crystal of the type described in Specification 806,923, more particularly one comprised of indium arsenide (In As) and indium phosphide (InP) in which the absorption edge occurs between 1 and 3 microns depending on the proportions of the mix, or one comprised of gallium arsenide (GaAs) and gallium phosphide (GaP) in which the absorption edge occurs between 0À5 and 1 micron depending on the proportions of the mix. The specification includes data as to the absorption characteristic of indium antimonide and gallium phosphide and the Verdet's constant of gallium phosphide, indium phosphide and silicon. The device is intended for use in controlling the intensity of radiation, for which purpose it is located between crossed polarizers.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE876746X | 1957-05-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB876746A true GB876746A (en) | 1961-09-06 |
Family
ID=6817813
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB16489/58A Expired GB876746A (en) | 1957-05-28 | 1958-05-22 | Improvements in or relating to electro-magnetic radiation control devices |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB876746A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4987026A (en) * | 1988-08-31 | 1991-01-22 | Uniroyal Plastics Co., Inc. | Flame retardant fabric structure |
-
1958
- 1958-05-22 GB GB16489/58A patent/GB876746A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4987026A (en) * | 1988-08-31 | 1991-01-22 | Uniroyal Plastics Co., Inc. | Flame retardant fabric structure |
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