GB859588A - Photosensitive cells, radiation filters and semiconductor materials for use in such cells and filters - Google Patents
Photosensitive cells, radiation filters and semiconductor materials for use in such cells and filtersInfo
- Publication number
- GB859588A GB859588A GB27837/57A GB2783757A GB859588A GB 859588 A GB859588 A GB 859588A GB 27837/57 A GB27837/57 A GB 27837/57A GB 2783757 A GB2783757 A GB 2783757A GB 859588 A GB859588 A GB 859588A
- Authority
- GB
- United Kingdom
- Prior art keywords
- filters
- cells
- semiconductor materials
- radiation
- tellaride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title 1
- 230000005855 radiation Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract 2
- 229910052753 mercury Inorganic materials 0.000 abstract 2
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000004880 explosion Methods 0.000 abstract 1
- 239000004615 ingredient Substances 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
- H10D62/864—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO further characterised by the dopants
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/479—Application of electric currents or fields, e.g. for electroforming
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL113331D NL113331C (en:Method) | 1957-09-03 | ||
| NL231057D NL231057A (en:Method) | 1957-09-03 | ||
| GB27837/57A GB859588A (en) | 1957-09-03 | 1957-09-03 | Photosensitive cells, radiation filters and semiconductor materials for use in such cells and filters |
| FR1201933D FR1201933A (fr) | 1957-09-03 | 1958-09-01 | Cellules photosensibles, filtres de radiations et semi-conducteurs à utiliser dans ces cellules et filtres |
| DEN15553A DE1117790B (de) | 1957-09-03 | 1958-09-02 | Zur Herstellung von Photohalbleiterzellen, Strahlungsfiltern od. dgl. geeignetes Halbleitermaterial |
| US758712A US2953690A (en) | 1957-09-03 | 1958-09-03 | Photosensitive cells, radiation filters and semiconductor materials for use in such cells and filters |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB27837/57A GB859588A (en) | 1957-09-03 | 1957-09-03 | Photosensitive cells, radiation filters and semiconductor materials for use in such cells and filters |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB859588A true GB859588A (en) | 1961-01-25 |
Family
ID=10266108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB27837/57A Expired GB859588A (en) | 1957-09-03 | 1957-09-03 | Photosensitive cells, radiation filters and semiconductor materials for use in such cells and filters |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US2953690A (en:Method) |
| DE (1) | DE1117790B (en:Method) |
| FR (1) | FR1201933A (en:Method) |
| GB (1) | GB859588A (en:Method) |
| NL (2) | NL113331C (en:Method) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0140625A1 (en) * | 1983-10-19 | 1985-05-08 | The Marconi Company Limited | Tellurides |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3069644A (en) * | 1959-02-16 | 1962-12-18 | Itt | Bolometers |
| US3171026A (en) * | 1961-03-08 | 1965-02-23 | Gen Dynamics Corp | Tellurium dosimeter |
| NL278359A (en:Method) * | 1961-05-12 | |||
| US3202827A (en) * | 1961-06-29 | 1965-08-24 | Cummins Chicago Corp | Photocell for detecting limited moving shadow areas |
| US3459945A (en) * | 1966-11-07 | 1969-08-05 | Barnes Eng Co | Laser calorimeter with cavitated pyroelectric detector and heat sink |
| US3656944A (en) * | 1970-02-16 | 1972-04-18 | Texas Instruments Inc | Method of producing homogeneous ingots of a metallic alloy |
| US3849205A (en) * | 1973-08-27 | 1974-11-19 | Texas Instruments Inc | Enhancement of solid state recrystallization by induced nucleation |
| US4376659A (en) * | 1981-06-01 | 1983-03-15 | Texas Instruments Incorporated | Process for forming semiconductor alloys having a desired bandgap |
| US4374678A (en) * | 1981-06-01 | 1983-02-22 | Texas Instruments Incorporated | Process for forming HgCoTe alloys selectively by IR illumination |
| US4447393A (en) * | 1983-02-09 | 1984-05-08 | Texas Instruments Incorporated | Oxide-free CdTe synthesis |
| US4582683A (en) * | 1984-12-03 | 1986-04-15 | Texas Instruments Incorporated | (Hg,Cd,Zn)Te crystal compositions |
| US7611920B1 (en) * | 2005-11-17 | 2009-11-03 | Bae Systems Information And Electronic Systems Integration Inc. | Photonic coupling scheme for photodetectors |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1824573A (en) * | 1925-07-08 | 1931-09-22 | Drahtlose Telegraphie Gmbh | Photo-electric tube |
| DE624339C (de) * | 1931-04-02 | 1936-01-17 | Siemens & Halske Akt Ges | Photozelle |
| DE655890C (de) * | 1934-06-28 | 1938-01-25 | Siemens App | Strahlungsempfindliche Halbleiterzelle |
| BE500536A (en:Method) * | 1950-01-31 | |||
| US2651700A (en) * | 1951-11-24 | 1953-09-08 | Francois F Gans | Manufacturing process of cadmium sulfide, selenide, telluride photoconducting cells |
| US2743430A (en) * | 1952-03-01 | 1956-04-24 | Rca Corp | Information storage devices |
-
0
- NL NL231057D patent/NL231057A/xx unknown
- NL NL113331D patent/NL113331C/xx active
-
1957
- 1957-09-03 GB GB27837/57A patent/GB859588A/en not_active Expired
-
1958
- 1958-09-01 FR FR1201933D patent/FR1201933A/fr not_active Expired
- 1958-09-02 DE DEN15553A patent/DE1117790B/de active Pending
- 1958-09-03 US US758712A patent/US2953690A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0140625A1 (en) * | 1983-10-19 | 1985-05-08 | The Marconi Company Limited | Tellurides |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1117790B (de) | 1961-11-23 |
| NL231057A (en:Method) | |
| FR1201933A (fr) | 1960-01-06 |
| NL113331C (en:Method) | |
| US2953690A (en) | 1960-09-20 |
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