GB8506981D0 - Engine speed regulating device - Google Patents

Engine speed regulating device

Info

Publication number
GB8506981D0
GB8506981D0 GB858506981A GB8506981A GB8506981D0 GB 8506981 D0 GB8506981 D0 GB 8506981D0 GB 858506981 A GB858506981 A GB 858506981A GB 8506981 A GB8506981 A GB 8506981A GB 8506981 D0 GB8506981 D0 GB 8506981D0
Authority
GB
United Kingdom
Prior art keywords
engine speed
regulating device
speed regulating
engine
speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GB858506981A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Motors Corp
Original Assignee
Mitsubishi Motors Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Motors Corp filed Critical Mitsubishi Motors Corp
Publication of GB8506981D0 publication Critical patent/GB8506981D0/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H01L29/945—Trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB858506981A 1983-01-31 1985-03-18 Engine speed regulating device Pending GB8506981D0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58013979A JPS59150465A (ja) 1983-01-31 1983-01-31 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
GB8506981D0 true GB8506981D0 (en) 1985-04-24

Family

ID=11848337

Family Applications (1)

Application Number Title Priority Date Filing Date
GB858506981A Pending GB8506981D0 (en) 1983-01-31 1985-03-18 Engine speed regulating device

Country Status (2)

Country Link
JP (1) JPS59150465A (ja)
GB (1) GB8506981D0 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61177767A (ja) * 1985-01-31 1986-08-09 Mitsubishi Electric Corp 半導体装置の製造方法
JPS61199654A (ja) * 1985-03-01 1986-09-04 Nec Corp 相補型ｍｏｓ集積回路
US4900693A (en) * 1987-12-21 1990-02-13 United Technologies Process for making polysilicon field plate with improved suppression of parasitic transistors
US5275974A (en) * 1992-07-30 1994-01-04 Northern Telecom Limited Method of forming electrodes for trench capacitors
CN102315155B (zh) * 2011-09-28 2016-06-08 上海华虹宏力半导体制造有限公司 浅沟槽隔离结构及其形成方法，半导体结构及其形成方法
CN107731732A (zh) * 2017-11-03 2018-02-23 上海新储集成电路有限公司 一种深沟槽隔离结构

Also Published As

Publication number Publication date
JPS59150465A (ja) 1984-08-28

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