GB8414923D0 - Mosfet fabrication method - Google Patents

Mosfet fabrication method

Info

Publication number
GB8414923D0
GB8414923D0 GB8414923A GB8414923A GB8414923D0 GB 8414923 D0 GB8414923 D0 GB 8414923D0 GB 8414923 A GB8414923 A GB 8414923A GB 8414923 A GB8414923 A GB 8414923A GB 8414923 D0 GB8414923 D0 GB 8414923D0
Authority
GB
Grant status
Grant
Patent type
Prior art keywords
fabrication method
mosfet fabrication
mosfet
method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB8414923A
Other versions
GB2142185A (en )
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02636Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639Preparation of substrate for selective deposition
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76294Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using selective deposition of single crystal silicon, i.e. SEG techniques
GB8414923A 1983-06-22 1984-06-12 Mosfet fabrication method Withdrawn GB8414923D0 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US50680483 true 1983-06-22 1983-06-22

Publications (2)

Publication Number Publication Date
GB8414923D0 true GB8414923D0 (en) 1984-07-18
GB2142185A true GB2142185A (en) 1985-01-09

Family

ID=24016078

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8414923A Withdrawn GB8414923D0 (en) 1983-06-22 1984-06-12 Mosfet fabrication method

Country Status (3)

Country Link
DE (1) DE3422495A1 (en)
FR (1) FR2549294A1 (en)
GB (1) GB8414923D0 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4942449A (en) * 1988-03-28 1990-07-17 General Electric Company Fabrication method and structure for field isolation in field effect transistors on integrated circuit chips
NL8900241A (en) * 1988-05-20 1989-12-18 Samsung Electronics Co Ltd A process for the manufacture of semiconductor devices.
US5158907A (en) * 1990-08-02 1992-10-27 At&T Bell Laboratories Method for making semiconductor devices with low dislocation defects

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2059116C3 (en) * 1970-12-01 1974-11-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen
US3861968A (en) * 1972-06-19 1975-01-21 Ibm Method of fabricating integrated circuit device structure with complementary elements utilizing selective thermal oxidation and selective epitaxial deposition
US4536842A (en) * 1982-03-31 1985-08-20 Tokyo Shibaura Denki Kabushiki Kaisha System for measuring interfloor traffic for group control of elevator cars

Also Published As

Publication number Publication date Type
FR2549294A1 (en) 1985-01-18 application
GB2142185A (en) 1985-01-09 application
DE3422495A1 (en) 1985-01-10 application

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)