GB674283A - Improvements in three-electrode semi-conductor device - Google Patents
Improvements in three-electrode semi-conductor deviceInfo
- Publication number
- GB674283A GB674283A GB12933/50A GB1293350A GB674283A GB 674283 A GB674283 A GB 674283A GB 12933/50 A GB12933/50 A GB 12933/50A GB 1293350 A GB1293350 A GB 1293350A GB 674283 A GB674283 A GB 674283A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrodes
- semi
- conductor
- block
- edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 229910001369 Brass Inorganic materials 0.000 abstract 1
- 229910000906 Bronze Inorganic materials 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 239000010951 brass Substances 0.000 abstract 1
- 239000010974 bronze Substances 0.000 abstract 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
674,283. Semi-conductor amplifiers. RADIO CORPORATION OF AMERICA. May 23, 1950 [May 31,1949], No. 12933/50. Class 40 (iv). [Also in Group XL (c)] A semi-conductor device comprises a block of semi-conductor with a wedge-shaped straight edge and having a low resistance contact, and two further electrodes each consisting of a metallic ribbon having a knifeedge at one end disposed at right angles to and in contact with the block edge. In Fig. 1, two ribbon-shaped phosphor bronze electrodes 15 and 16 have knifeedges which engage the edge of cube-shaped semi-conductor block 10 which is fixed to a brass support 12 which forms a base electrode. An insulating block 25 carries the support 12 and metal supports 22 and 23 which carry the electrodes 15 and 16. The distance between electrodes 15 and 16 may be small for use as a transistor in amplifying or oscillating circuits. The electrodes 15 and 16 may be separated by a thin layer of film of insulating material to maintain the desired spacing. The arrangement enables higher contact pressures to be used to reduce noise and improves heat dissipation.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US674283XA | 1949-05-31 | 1949-05-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB674283A true GB674283A (en) | 1952-06-18 |
Family
ID=22075911
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB12933/50A Expired GB674283A (en) | 1949-05-31 | 1950-05-23 | Improvements in three-electrode semi-conductor device |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB674283A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1194506B (en) * | 1961-05-27 | 1965-06-10 | Telefunken Patent | Semiconductor arrangement with flat contact electrodes |
-
1950
- 1950-05-23 GB GB12933/50A patent/GB674283A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1194506B (en) * | 1961-05-27 | 1965-06-10 | Telefunken Patent | Semiconductor arrangement with flat contact electrodes |
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