GB2482897A - An apparatus and method for the production of nanoparticles - Google Patents

An apparatus and method for the production of nanoparticles Download PDF

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Publication number
GB2482897A
GB2482897A GB1013861.8A GB201013861A GB2482897A GB 2482897 A GB2482897 A GB 2482897A GB 201013861 A GB201013861 A GB 201013861A GB 2482897 A GB2482897 A GB 2482897A
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United Kingdom
Prior art keywords
chamber
nanoparticles
diameter
axis
particles
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Application number
GB1013861.8A
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GB201013861D0 (en
Inventor
Alistair H Kean
Srinivas Saranu
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Mantis Deposition Ltd
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Mantis Deposition Ltd
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Publication date
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Priority to GB1013861.8A priority Critical patent/GB2482897A/en
Publication of GB201013861D0 publication Critical patent/GB201013861D0/en
Priority to EP11178003A priority patent/EP2421022A3/en
Publication of GB2482897A publication Critical patent/GB2482897A/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0384—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0384—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
    • H01L31/03845—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material comprising semiconductor nanoparticles embedded in a semiconductor matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources

Abstract

An apparatus 10 for the production of nanoparticles comprises a source 20 for generating a flow of particles substantially along an axis, and first 12 and second 14 chambers having respectively first and second diameters in a direction transverse to the axis, such that the second diameter is smaller than the first diameter. In a method of use of the apparatus, a stream of particles is generated along the axis, in the first chamber said particles agglomerate together into nanoparticles 32 of a first size, and in the second chamber said nanoparticles agglomerate together into nanoparticles 34 of a second, greater size. The first and second chambers may be coupled by a constriction 16 having a third diameter that is smaller than the second diameter. The apparatus may further comprise a gas source arranged to direct a flow of gas 28 through the first chamber, past the source of particles and into the second chamber. In use, the gas pressure in the second chamber is preferably greater than the gas pressure in the first chamber.

Description

Production of nanoparticles *..* * S
S
S..... * .
FIELD OF THE INVENTION * . S
* The present invention relates to the production of nanoparticles.
BACKGROUND ART
S
S.....
* Metal nanoparticles interact strongly with (ight due to the geneçation of localized surface plasmons. It has been shown that the strong scattering of light by metal nanoparticles can be used to improve the efficiency of solar cells (see "Plasmonic enhancement of silicon solar cells", by Temple T and Bagnall D, Technical Digest of the International PVSEC-17, 2007).
In thin-film photovoltaic cells without nanoparticles, a large portion of photons incident on the film pass through or are reflected without generating the electron-hole pair that creates a potential difference in the cell. This is the result of photons either missing the active region, or passing through it without interaction due to the relatively short path length of photons incident on the cell at right angles. By inserting nanoparticles into the active area of the cell, and by appropriate design of the nanoparticles, light can be scattered sideways (i.e. within the plane of the thin film). The scattered photons therefore experience a longer path through the active region, and are more likely to interact and generate electron-hole pairs. This greatly increases the efficiency of the cell, and is known as "plasmonic light harvesting".
Typical techniques used to add nanoparticles to the surface of a thin film photovoltaic include nanoparticles which are synthesized chemically and are subsequently deposited onto the surface of the photovoltaic using solvents.
Chemically generated nanoparticles tend to be functionalised' with hydrocarbon impurities which degrades their physical properties.
SUMMARY OF THE INVENTION
The technique described here provides a method which allows pure * ..S *.** nanoparticles to be deposited directly onto the surface, or any level of the : photovoltaic structure. *.*.
In order to scatter photons sideways towards the active region, the size *:. and shape of the nanoparticles must be carefully chosen. The greatest efficiency has been shown for nanoparticles having a diameter of 5Onm or more. S...
Nanoparticles produced by techniques disclosed in our previous disclosures :: typically have a diameter that is between 0.5 and 20 nm.
The present invention is therefore directed towards an apparatus and method for reliably and efficiently producing nanoparticles that are greater in size than previously possible. Apparatus according to embodiments of the present invention is capable of producing nanoparticles between 20 and 160 nm in diameter, These can then be used in thin-film photovoltaic cells or in other Contexts.
En a first aspect of the present invention, there is provided an apparatus comprising a source for generating a flow of particles substantially along an axis; a first chamber, having a first diameter in a direction transverse to the axis, in which the particles agglomerate together into nanoparticles of a first size; and a second chamber, coupled to the first chamber, in which the nanoparticles agglomerate together into nanoparticles of a second, greater size. The second chamber has a second diameter transverse to the axis that is narrower than the first diameter.
In one embodiment, the coupling between the first and second chambers comprises a constriction having a third diameter transverse to the axis that is narrow than the second diameter. The constriction may be located on the axis.
In a further embodiment, the apparatus further comprises a gas flow source from the first chamber into the second chamber. The gas flow source may be arranged to direct the flow through the first chamber past the source and then into the second chamber.
The gas pressure in the second chamber may be higher than the gas . pressure in the first chamber, facilitating the generation of nanoparticles with :" greater diameter in the second chamber. For example, the gas pressure in the first chamber may be between about iO atmospheres and about 102 atmospheres, and the gas pressure in the second chamber at a higher level.
In a second aspect of the present invention, a method of producing I... nanoparticles is provided, the method comprising: generating a stream of particles along an axis; in a first chamber, allowing the particles to agglomerate together into nanoparticles of a first size, the first chamber having a first diameter in a direction transverse to the axis; and in a second chamber coupled to the first chamber, allowing the nanoparticles to. agglomerate together into nanoparticles of a second, greater size. The second chamber has a second diameter transverse to the axis that is narrower than the first diameter.
BRIEF DESCRIPTION OF THE DRAWINGS
An embodiment of the present invention will now be described by way of example, with reference to the accompanying figures in which; Figure 1 shows the claimed apparatus in a schematic form; Figure 2 shows a flowchart of a method according to embodiments of the present invention; and Figures 3 & 4 show an atomic force microscope image of nanoparticles deposited onto silicon using the method of the present invention.
DETAILED DESCRIPTION OF THE EMBODIMENTS
Figure 1 shows, in schematic form, an apparatus 10 according to embodiments of the present invention.
The apparatus comprises two main chambers: a first, relatively wide chamber 12, in which particles are ionized and agglomerated into relatively small nanoparticles; and a second, relatively narrow chamber 14, in which the nanoparticles themselves agglomerate together into relatively large *.*.*, nanoparticles. After the second chamber 14, the relatively large nanoparticles I...
are collected. The first chamber 12 is coupled to the narrower second chamber *.....
* 14 via a constriction 16, which may be narrower than the second chamber 14. *** * * *
The first chamber 12 contains a magnetron sputtering device 18 to S. generate a vapour of particles. The device 18 comprises a source 20 of . particles. The interior of the first chamber 12 contains an inert gas at a S..
: relatively high pressure of a 102 mbar or more, say up to 5x10'mbar (i.e., still well below atmospheric pressure). Alternatively, any method capable of creating an atomic vapour can be used, such as evaporative techniques (e.g. thermal evaporation, MBE) or chemical techniques (e.g. CVD).
The inert gas is fed into the chamber 12 from a point behind the magnetron 12 and extracted from one or more exit apertures 22 in a furthermost portion of the second chamber 14 (i.e. in a portion of the second chamber 14 nearer its furthermost end than the constriction 16). This creates a gas flow through the first chamber as indicated by arrows 28 and establishes a drift of the vapour towards the constriction 16 and into the second chamber.
The gas flow then exits via the exit apertures 22 (see arrows 30 in Figure 1).
During its transit to the constriction 16, the vapour condenses to form a nanoparticle cloud 32. That is, the atomic particles condense to form nanoparticles 32 of a first size (e.g. 0.5 to 20 nm in diameter) The narrowness of the constriction 16 may ensure that only nanoparticles with a trajectory lying substantially along the axis of the apparatus 10 are allowed through to the second chamber 14. It also forces nanoparticles into closer proximity with one another, by action of the gas flow 28 towards the constriction 16.
In the second chamber 14, the relatively narrow diameter forces the nanoparticles 32 themselves to condense and agglomerate into larger nanoparticles 34 (having a diameter of between 20 and 200 nm). That is, the pressure inside the second chamber 14 is higher than that in the first chamber 12 (Bernouilli's principle applying only to noncompressible fluids, while the inert gas is at sufficiently low pressure that it may be compressed even at low flow rates). The relatively higher pressure results in more collisions between * ** * * . particles, and so a greater likelihood that nanoparticles will collide with one *::: another and coalesce to form a nanoparticle having an even greater diameter.
The relatively high gas pressure may also be significant in reducing the kinetic energy of the nanoparticles through collisions. Thus, the nanoparticles 34 spend a greater time in the second chamber 14 in which to agglomerate into larger *:**. nanoparticles.
After the second chamber 14, the apparatus 10 comprises a means 24 for collecting nanoparticles. By using magnetron sputtering, a high fraction of the nanoparticles produced are negatively charged. This allows the particles to be accelerated electrostatically across a vacuum to a substrate or object 26, and thus gain kinetic energy. This can be achieved by raising the substrate or object to a suitably high potential. Non-conductive substrates can be placed behind a conductive mask having an appropriately shaped aperture in the line of sight of the particle beam. When used in the manufacture of photovoltaic cells, for example, the substrate 26 can be glass or plastic coated with a layer of conducting material (e.g. molybdenum).
The kinetic energy acquired in flight is lost on impact by way of deformation of the particles. The degree of deformation naturally depends on the energy imparted to the particles in flight. At very high energies, the nanoparticle structure may be lost and the resultant film will be essentially bulk material. At very low energies, the process will be akin to condensation and the film may be insufficiently adherent. Between these extremes, there is scope for deformation of the particles that is mild enough for the surface of the film to retain nanoparticulate properties but for the interface with the substrate to be adherent.
Figure 2 shows a flowchart of a method according to embodiments of the present invention.
In step 100, a flow of inert gas is established from the first chamber into the second chamber. In step 102, a stream of particles is generated, for example through magnetron sputtering (although alternative methods will be :": familiar to those skilled in the art). In step 104, the stream of particles is allowed to agglomerate into nanoparticles of a first size. This is achieved through a relatively high gas pressure inside the first chamber which causes the particles to lose kinetic energy through collisions. In step 106, the nanoparticles pass into the second chamber and are allowed to agglomerate into nanoparticles of a second, greater size. This is achieved through a yet higher gas pressure in the second chamber as a result of the narrower dimensions thereof.
Thus the present invention provides an apparatus for generating nanoparticles of greater diameter than previously possible. The apparatus comprises two agglomeration zones: in a first, relatively wide chamber, particles agglomerate to form nanoparticles of a first diameter; in a subsequent, relatively narrow chamber, the nanoparticles agglomerate together to form nanoparticles of a second, greater diameter.
Figures 3 and 4 show the results that can be obtained by use of this method. Figure 3 is an atomic force microscope image of nanoparticles deposited onto silicon using the method described in this patent. Figure 4 shows a topography scan of the line indicated by arrow 50, which shows a mean nanoparticle diameter of around lOOnm.
It will of course be understood that many variations may be made to the above-described embodiment without departing from the scope of the present invention. * * * * I * I. * I * I.. -"a. * I S..,
*Ss*sI
S

Claims (14)

  1. CLAIMS1. Apparatus for the production of nanoparticles, comprising: a source for generating a flow of particles substantially along an axis; a first chamber, having a first diameter in a direction transverse to the axis, in which the particles agglomerate together into nanoparticles of a first size; and a second chamber, coupled to the first chamber, in which the nanoparticles agglomerate together into nanoparticles of a second, greater size, wherein the second chamber has a second diameter transverse to the axis that is narrower than the first diameter. * * **.
  2. 2. Apparatus as claimed in claim 1, in which the coupling between the first and second chambers comprises a constriction having a third diameter *SS : transverse to the axis that is narrow than the second diameter. S..
  3. 3. Apparatus as claimed in claim 2, wherein the constriction is located on the S...*,.,. axis.S 5S55
    *
  4. 4. Apparatus as claimed in any one of the preceding claims, further comprising a gas flow source from the first chamber into the second chamber.
  5. 5. Apparatus as claimed in claim 4 wherein the gas flow source is arranged to direct the flow through the first chamber past the source and then into the second chamber.
  6. 6. Apparatus as claimed in any one of the preceding claims, wherein the gas pressure in the first and second chambers is less than atmospheric pressure.
  7. 7. Apparatus as claimed in claim 6, wherein the gas pressure in the second chamber is higher than the gas pressure in the first chamber. -9.-
  8. 8. Apparatus as claimed in claim 6 or 7, wherein the gas pressure in the first chamber is between about io-atmospheres and about 102 atmospheres.
  9. 9. Apparatus as claimed in any one of the preceding claims, further comprising a target substrate, onto which the nanoparticles of a second size are deposited.
  10. 10. Apparatus as claimed in claim 9, wherein the target substrate is at an electric potential controlled such that the nanoparticles of a second size are deposited on the target without disassociating.
  11. 11. A method of producing nanoparticles, comprising: generating a stream of particles along an axis; in a first chamber, allowing the particles to agglomerate together into nanoparticles of a first size, the first chamber having a first diameter in a direction transverse to the axis; and :::: in a second chamber coupled to the first chamber, allowing the nanoparticles to agglomerate together into nanoparticles of a second, greater size, the second chamber having a second diameter transverse * to the axis that is narrower than the first diameter.
    *
  12. 12. A method as claimed in claim 11, wherein the nanoparticles of a first size pass through a constriction between the first and second chambers having a third diameter transverse to the axis' that is narrow than the second diameter.
  13. 13. A method as claimed in claim 12, wherein the constriction is located on the axis.
  14. 14. A method as claimed in claim 11 or claim 12, further comprising the step of establishing a flow of gas through the first chamber and into the second chamber.
GB1013861.8A 2010-08-18 2010-08-18 An apparatus and method for the production of nanoparticles Withdrawn GB2482897A (en)

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Application Number Priority Date Filing Date Title
GB1013861.8A GB2482897A (en) 2010-08-18 2010-08-18 An apparatus and method for the production of nanoparticles
EP11178003A EP2421022A3 (en) 2010-08-18 2011-08-18 Production of nanoparticles

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Application Number Priority Date Filing Date Title
GB1013861.8A GB2482897A (en) 2010-08-18 2010-08-18 An apparatus and method for the production of nanoparticles

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GB201013861D0 GB201013861D0 (en) 2010-09-29
GB2482897A true GB2482897A (en) 2012-02-22

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000345332A (en) * 1999-06-04 2000-12-12 Japan Science & Technology Corp Manufacture of layer-shaped cluster
EP1486583A1 (en) * 2002-02-26 2004-12-15 Japan Science and Technology Agency Method and device for manufacturing semiconductor or insulator/metallic laminar composite cluster
GB2430202A (en) * 2005-09-20 2007-03-21 Mantis Deposition Ltd Antibacterial surface coatings
JP2007332405A (en) * 2006-06-13 2007-12-27 Osaka Vacuum Ltd Apparatus and method for producing cluster
CN100434353C (en) * 2006-01-24 2008-11-19 南京大学 Gas phase synthesis process of nanometer particle array with one-dimensional diameter and number density gradient

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7951276B2 (en) * 2006-06-08 2011-05-31 The Board Of Trustees Of The University Of Illinois Cluster generator

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000345332A (en) * 1999-06-04 2000-12-12 Japan Science & Technology Corp Manufacture of layer-shaped cluster
EP1486583A1 (en) * 2002-02-26 2004-12-15 Japan Science and Technology Agency Method and device for manufacturing semiconductor or insulator/metallic laminar composite cluster
GB2430202A (en) * 2005-09-20 2007-03-21 Mantis Deposition Ltd Antibacterial surface coatings
CN100434353C (en) * 2006-01-24 2008-11-19 南京大学 Gas phase synthesis process of nanometer particle array with one-dimensional diameter and number density gradient
JP2007332405A (en) * 2006-06-13 2007-12-27 Osaka Vacuum Ltd Apparatus and method for producing cluster

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EP2421022A2 (en) 2012-02-22
EP2421022A3 (en) 2013-03-06
GB201013861D0 (en) 2010-09-29

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