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GB2418295B - Temperature compensated optoelectronic device having a laser diode and an electro-absorption modulator - Google Patents

Temperature compensated optoelectronic device having a laser diode and an electro-absorption modulator

Info

Publication number
GB2418295B
GB2418295B GB0420898A GB0420898A GB2418295B GB 2418295 B GB2418295 B GB 2418295B GB 0420898 A GB0420898 A GB 0420898A GB 0420898 A GB0420898 A GB 0420898A GB 2418295 B GB2418295 B GB 2418295B
Authority
GB
Grant status
Grant
Patent type
Prior art keywords
diode
compensated
modulator
optoelectronic
absorption
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0420898A
Other versions
GB0420898D0 (en )
GB2418295A (en )
Inventor
Mark Alistair Holm
Martyn Owen
David Clifton Powell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies Fiber IP (Singapore) Pte Ltd
Avago Technologies General IP (Singapore) Pte Ltd
Agilent Technologies Inc
Original Assignee
Avago Technologies Fiber IP (Singapore) Pte Ltd
Avago Technologies General IP (Singapore) Pte Ltd
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255Controlling the frequency of the radiation
    • H01S5/06256Controlling the frequency of the radiation with DBR-structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01057Lanthanum [La]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12042LASER
GB0420898A 2004-09-21 2004-09-21 Temperature compensated optoelectronic device having a laser diode and an electro-absorption modulator Expired - Fee Related GB2418295B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0420898A GB2418295B (en) 2004-09-21 2004-09-21 Temperature compensated optoelectronic device having a laser diode and an electro-absorption modulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0420898A GB2418295B (en) 2004-09-21 2004-09-21 Temperature compensated optoelectronic device having a laser diode and an electro-absorption modulator

Publications (3)

Publication Number Publication Date
GB0420898D0 GB0420898D0 (en) 2004-10-20
GB2418295A true GB2418295A (en) 2006-03-22
GB2418295B true GB2418295B (en) 2009-09-09

Family

ID=33306901

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0420898A Expired - Fee Related GB2418295B (en) 2004-09-21 2004-09-21 Temperature compensated optoelectronic device having a laser diode and an electro-absorption modulator

Country Status (1)

Country Link
GB (1) GB2418295B (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6516017B1 (en) * 1999-11-11 2003-02-04 Mitsubishi Denki Kabushiki Kaisha Multiwavelength semiconductor laser device with single modulator and drive method therefor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6516017B1 (en) * 1999-11-11 2003-02-04 Mitsubishi Denki Kabushiki Kaisha Multiwavelength semiconductor laser device with single modulator and drive method therefor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Improved frequency control of DBR lasers under hopped conditions by prediction and compensation of heating, IEEE photonics technology letters, vol. 9, Feb 1997 *
Semiconductor thermal measurement & management symp. 2004 20th annual IEEE, 9-11 Mar 2004, "Thermal effects in monolithically integrated tunable laer transmitters", Kozody et al, pp 177-183 *

Also Published As

Publication number Publication date Type
GB0420898D0 (en) 2004-10-20 grant
GB2418295A (en) 2006-03-22 application

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20130725 AND 20130731

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20130921