GB2387269A - Monlithic photodetector - Google Patents
Monlithic photodetector Download PDFInfo
- Publication number
- GB2387269A GB2387269A GB0207711A GB0207711A GB2387269A GB 2387269 A GB2387269 A GB 2387269A GB 0207711 A GB0207711 A GB 0207711A GB 0207711 A GB0207711 A GB 0207711A GB 2387269 A GB2387269 A GB 2387269A
- Authority
- GB
- United Kingdom
- Prior art keywords
- photodetector according
- absorbing region
- monolithic
- optical signal
- monolithic photodetector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 44
- 239000002800 charge carrier Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000011358 absorbing material Substances 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 230000007547 defect Effects 0.000 claims description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910005331 FeSi2 Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Abstract
A monolithic photodetector including, an optical waveguide 2, a photodiode portion including an absorbing region 6 that generates free charge carriers when light is incident upon it, contacts 14 (Figure 2, 15) forming a diode for detecting the presence of free charge caters, and a reflective structure 12. The waveguide is oriented to direct an optical signal into the absorbing region and the reflective structure is oriented to reflect the optical signal back into the absorbing region at least once to increase absorbtion of the optical signal within the photodiode region.
Description
MONOLITHIC PHOTODETECTOR
FIELD OF INVENTION
The present invention relates to a monolithic photodetector for sensing an 5 optical signal transmitted through a waveguide.
BACKGROUND OF INVENTION
A variety of types of light sensors are known which can be mounted on an integrated optical circuit in order to receive light from a waveguide integrated to on the circuit. One example is a SiGe/Si multi-quantum well (MOW) structure arranged to form a photodetector which can be mounted on a silicon optical circuit to receive an optical signal directed thereto by a waveguide.
It is known from GB 0131003.6 to provide a photodiode region within a 15 waveguide such that a portion of the light passing through the waveguide is absorbed and generates free charge carriers. The charge carriers are detected by an integrated diode arrangement. Unfortunately, the structure described is most suited to absorb only a relatively small proportion (typically 5%) of the optical energy passing through the waveguide. To absorb ho substantially all of the light energy supplied to such a waveguide, the structure described in GB 0131003.6 would need to be prohibitively long.
It is an object of the present invention to provide a monolithic photodetector that allows for absorption of all or at least most of the light energy supplied to 25 a waveguide in a relatively compact way.
SUMMARY OF INVENTION
According to the invention, there is provided a monolithic photodetector including: so an optical waveguide;
a photodiode portion including an absorbing region that generates free charge carriers when light of one or more selected wavelengths is incident thereon; contacts fornning a diode for detecting the presence of said free charge s carriers; and a reflective structure adjacent the absorbing region; wherein the waveguide is orientated to direct an optical signal into the absorbing region and the reflective structure is orientated and configured to reflect the optical signal back into absorbing region at least once to increase JO absorption of the optical signal within the photodiode region.
Preferably, the reflective structure is concave in at least one plane such that the optical signal is reflected convergently back towards the absorbing region.
15 More preferably, the reflective region defines an enclosure in plan, the enclosure including an aperture at one side and the absorbing region being disposed within the enclosure, the waveguide being arranged to direct the optical signal through the aperture into the enclosure for absorption by the absorbing region. It is particularly preferred that the reflective structure is 20 arcuate.
In a preferred form, the reflective structure is defined by an interface between a first and second substance. More preferably, the reflective structure is defined by a substantially vertical surface, the waveguide being disposed to :s direct light horizontally into the absorbing region.
Preferably, a first of the contacts is disposed adjacent the vertical surface, more preferably, the first contact is formed from an e-type material. More preferably, the second contact is formed from a p-type material.
It is particularly preferred that the monolithic photodetector is configured such that the optical signal is reflected into the absorbing region multiple times.
In a preferred form, the optical signal is substantially absorbed by the absorbing region.
s In one embodiment, the light absorbing material is an amorphous or polycrystalline material, preferably doped.
In an alternative embodiment, the light absorbing material is an alloy, such as a silicongermanium alloy.
In one preferred embodiment, the absorbing region includes defects to provide deep band gap states within the band gap thereof. Preferably, the -A deep band gap states are formed by ion implantation.
15 In a preferred embodiment of the invention, the monolithic photodetector is formed of silicon, and preferably formed within a silicon-on-insulator chip.
Preferably, the diode comprises a pin diode.
a,., 20 Preferably also, the waveguide comprises a rib projecting from a slab region.
BRIEF DESCRIPTION OF DRAWINGS
A preferred embodiment of the invention will now be described, by way of example only, with reference to the accompanying drawings, in which: Figure 1 is a plan view of a monolithic photodiode according to the invention; Figure 2 is vertical sectional view along line 11-ll of Figure 1; 30 Figure 3 is a vertical sectional view along line lil-lil of Figure 1; and Figure 4 is a perspective view of the monolithic photodiode of Figures 1 to 3.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENT
Referring to the drawings, a monolithic photodetector 1 forms part of an integrated optical circuit formed on a planar substrate, e.g. a silicon chip. The 5 photodetector 1 includes an optical waveguide 2 for receiving and directing an optical signal 4 into an absorbing region 6. The absorbing region 6 is surrounded by an arcuate groove 8, except for an aperture 10 formed to allow passage of the waveguide 2. The groove 8 defines a vertical reflective surface 12. An e-type material partially fills the groove to define an e-type to contact 14. A p-type material forms a p-type contact 15 disposed adjacent the absorbing region 6.
Each of the p-type and e-type regions is in contact with a metallic layer for electrically connecting the regions to an external circuit. The particular Is manner in which this achieved is not related to the present inventive concept, and so for the purposes of clarity in the drawings, the metallic layers are not shown. In general, a metallic layer forming a cathode will be formed on top of the e-type contact and the area surrounding the groove 8. Similarly, a metallic layer forming an anode will be formed on top of the p-type contact, ho straddling the waveguide at that point and extending back out through the aperture on top of the waveguide. It will be appreciated that other arrangements of metallic layers an also be used.
The absorbing region 6 comprises a material that generates free charge 25 carriers when light of one or more selected wavelengths is incident thereon. It may, for instance, comprise a semiconductor material having a band gap of a size such that photons of a given wavelength (or shorter wavelengths) are able to excite charge carriers across the band gap from the valence band to the conduction band. Alternatively, it may comprise a semiconductor material 30 the band gap of which is too large for this to occur for the wavelength(s) of interest but in which deep band gap levels are formed between the conduction and valence bands to facilitate the generation of free charge carriers upon
illumination by such wavelengths. It may also comprise light absorbing material such as polycrystalline or amorphous semiconductor materials.
Examples of suitable absorbing materials include: Si/Ge alloys, Ge-rich s regions within a silicon matrix, polycrystalline silicon, amorphous silicon, iron silicide, etc. In some cases, the absorbing region may be arranged to absorb a specific wavelength or wavelength band, e.g. wavelengths of around 1.3 and/or 1.5 to microns (as commonly used in telecommunication applications). In other cases the absorbing region may be capable of absorbing a wider range of wavelengths. In use, when an optical signal is transmitted along the waveguide and directed 15 into the absorbing region 6, free charge carriers are generated. As such, the e-type contact 14, the p-type contact 15 and the absorbing region 6 between the contacts form a p-i-n photodiode. Applying a reverse bias to the photodiode sets up an electric field therebetween. The electric field acts on
the charge carriers generated by light absorption to sweep them to the go contacts. The charge carriers thereby create a photocurrent in an external electrical circuit (not shown) connected to the p and n contacts. The amount of light entering the absorbing region can be monitored by measuring the photocurrent generated in the photodiode.
:5 As shown in Figure 1, in the preferred form, the waveguide incorporates a taper to direct the optical signal into an absorbing region 6. This prevents the back-reflections that would occur if the waveguide terminated abruptly. It also has the effect of causing the optical signal to gradually depart from the waveguide and spread outwardly in a more radial fashion than would so otherwise be the case. This reduces the amount of the optical signal reflected from the opposite side of the enclosure back through the aperture that the waveguide enters.
As the optical signal passed through the absorbing region 6, only some of its energy is absorbed and used to generate the free charge carriers. The remainder, and in the preferred embodiment, the majority, of the optical signal 5 passes through the absorbing region, with or without some amount of scattering, depending upon the size and type of the absorbing region. The optical signal that is not absorbed is reflected when it reaches the reflective surface 12, such that the remainder of the signal is directed back into the absorbing region for further absorption a free charge carrier generation.
to Additional reflections can take place from other parts of the reflective surface 12 until all of the optical signal is absorbed within the absorbing region.
It will be appreciated that some of the optical signal may be lost by scattering and reflection back through the aperture 10. However, the shape and 15 orientation of the waveguide 2, reflective structure 12 and aperture 10 are selected such that this is reduced to an acceptable level.
It will be understood that although an arcuate, convergent reflective structure is shown in the preferred embodiment, other structures can also be used. For go example, polygons of any suitable number of sides and multiple curved or flat independent surfaces can be used. Also, the improve reflectivity, the reflective structure can be coated with a reflective coating such as a metallic layer. 25 The absorbing region(s) is selected so as to be suitable for being integrally formed with or in the waveguide. This greatly facilitates the manufacture of the light sensor as it is then not necessary to hybridise the light sensor as a separate component onto the optical circuit.
so The following examples relate to light sensors integrated on a silicon substrate but the principle is applicable to other types of semiconductor substrate, e.g. in III-V compounds such as InGaAsP or InP.
As shown in Figure 2, in the preferred form the photodetector is separated from a supporting substrate 16 (typically also of silicon) by an optical confinement layer 18 (typically of silicon dioxide). Such a structure is 5 conveniently formed from a silicon-on-insulator chip, as widely used for integrated electrical circuits.
The dimensions of a waveguide are typically in the range 2-10 micrometres.
The optical mode expands to have a greater diameter as it enters the 10 absorbing region 6, to typically of the order of 10-40 micrometres. To improve efficiency, the absorbing region 6 should have a diameter of a similar order, or larger. In preferred embodiments, the taper along the waveguide is 100-1000 micrometres long. The absorbing region 6 is preferably of similar dimensions to maximise the overlap of the optical mode therewith. The circular shape of 15 the illustrated absorbing region 6 is exemplary only, and other shapes can be selected in practice to ensure adequate overlap of the optical mode.
In practice, only a relatively small fraction (typically 1-5%) of the optical signal will be absorbed by the absorbing region 6 in a single pass. The signal will do therefore need to pass through the region many times to ensure most or all of it is absorbed. For this reasons, the photodetector described in this embodiment will tend to be somewhat slower to respond than IIIN photodiodes, which do not require multiple passes of the optical signal. It is therefore considered less critical in the present embodiment to make a small 25 structure to provide low transit time between carrier generation and arrival at the contacts.
It should also be noted that impurity levels in the silicon are relatively low (other than those deliberately introduced to form the absorbing region), so so losing carriers in this way is not particularly important.
In another alternative, the absorbing region 6 may comprise a SiGe layer, e.g. formed by selective epitaxial growth of the rib 10A. Similarly, other types of absorbing regions 6 may be used, e.g. Ge-rich islands, Siamorphous regions, FeSi2 or defect regions (e.g. caused by implantation of Si ions or other ions 5 such as gold, oxygen, hydrogen or helium).
Defects formed by ion implantation can be engineered by controlling the dose and subsequent annealing. Further details of such defect engineering are given in the applicant's co-pending application GB 0131001.0 to entitled "A Photodiode" referenced above.
In an alternative embodiment (not shown), the absorbing region uses metallised areas to provide Schottkey contacts which provide electronhole pairs from internal photoemission. Light transmitted along the waveguide is ts incident upon the metallised areas (as these are provided on the walls of the waveguide) and provides charge carriers within the metal layer with sufficient energy to pass over the Schottkey barrier formed between the metal layer and the semi-conductor material of the waveguide so releasing charge carriers within the waveguide. As in the earlier embodiment, these are then detected 20 by a pin diode.
Although the invention has been described with reference to a specific embodiment, it will be appreciated by those skilled in the art that the invention can be embodied in many other forms.
Claims (19)
1. A monolithic photodetector including: an optical waveguide; a photodiode portion including an absorbing region that generates free 5 charge carriers when light of one or more selected wavelengths is incident thereon; contacts forming a diode for detecting the presence of said free charge carriers; and a reflective structure adjacent the absorbing region; To wherein the waveguide is orientated to direct an optical signal into the absorbing region and the reflective structure is orientated and configured to reflect the optical signal back into absorbing region at least once to increase absorption of the optical signal within the photodiode region.
5
2. A monolithic photodetector according to claim 1, wherein the reflective structure is concave in at least one plane such that the optical signal is reflected convergently back towards the absorbing region.
3. A monolithic photodetector according to claim 1 or 2, wherein the To reflective region defines an enclosure in plan, the enclosure including an aperture at one side and the absorbing region being disposed within the enclosure, the waveguide being arranged to direct the optical signal through the aperture into the enclosure for absorption by the absorbing region.
25
4. A monolithic photodetectoraccording to claim 2 or 3 wherein the reflective structure is arcuate.
5. A monolithic photodetector according to any one of the preceding claims, wherein the reflective structure is defined by an interface between a 30 first and second substance.
6. A monolithic photodetector according to any one of the preceding claims, wherein the reflective structure is defined by a substantially vertical surface, the waveguide being disposed to direct light horizontally into the absorbing region.
7. A monolithic photodetector according to claim 1, wherein a first of the contacts is disposed adjacent the vertical surface.
8. A monolithic photodetector according to claim 7, wherein the first 10 contact is formed from an e-type material.
9. A monolithic photodetector according to any one of the preceding claims, configured such that the optical signal is reflected into the absorbing region multiple times.
10. A monolithic photodetector according to any one of the preceding claims, configured such that the optical signal is substantially absorbed by the absorbing region.
so
11. A monolithic photodetector according to any one of the preceding claims, wherein the light absorbing material is an amorphous or polycrystalline material.
12. A monolithic photodetector according to claim 11, wherein the as amorphous or polycrystalline material is doped.
13. A monolithic photodetector according to any one of claims 1 to 10, wherein the light absorbing material is an alloy.
30
14. A monolithic photodetector according to claim 13, wherein the alloy is a silicon-germanium alloy.
15. A monolithic photodetector according to any one of the preceding claims, wherein the absorbing region includes defects to provide deep band gap states within the band gap thereof.
5
16. A monolithic photodetector according to claim 15, in which the deep band gap states are formed by ion implantation.
17. A monolithic photodetector according to any one of the preceding claims formed of silicon, preferably formed within a silicon-on-insulator chip.
18. A monolithic photodetector according to any one of the preceding claims, wherein the diode comprises a p-l-n diode.
19. A monolithic photodetector according to any one of the preceding 15 claims, wherein the waveguide comprises a rib projecting from a slab region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0207711A GB2387269A (en) | 2002-04-03 | 2002-04-03 | Monlithic photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0207711A GB2387269A (en) | 2002-04-03 | 2002-04-03 | Monlithic photodetector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB0207711D0 GB0207711D0 (en) | 2002-05-15 |
| GB2387269A true GB2387269A (en) | 2003-10-08 |
Family
ID=9934189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0207711A Withdrawn GB2387269A (en) | 2002-04-03 | 2002-04-03 | Monlithic photodetector |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2387269A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1716596A2 (en) * | 2003-11-20 | 2006-11-02 | Sioptical, Inc. | Silicon-based schottky barrier infrared optical detector |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114220881B (en) * | 2021-12-14 | 2023-06-02 | 武汉光谷信息光电子创新中心有限公司 | Photoelectric detector |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6307242B1 (en) * | 1998-02-19 | 2001-10-23 | Nec Corporation | Semiconductor photo-detector with square-shaped optical wave-guide |
| JP2002040304A (en) * | 2000-07-31 | 2002-02-06 | Advantest Corp | Photodetector |
-
2002
- 2002-04-03 GB GB0207711A patent/GB2387269A/en not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6307242B1 (en) * | 1998-02-19 | 2001-10-23 | Nec Corporation | Semiconductor photo-detector with square-shaped optical wave-guide |
| JP2002040304A (en) * | 2000-07-31 | 2002-02-06 | Advantest Corp | Photodetector |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1716596A2 (en) * | 2003-11-20 | 2006-11-02 | Sioptical, Inc. | Silicon-based schottky barrier infrared optical detector |
| EP1716596A4 (en) * | 2003-11-20 | 2007-03-21 | Sioptical Inc | Silicon-based schottky barrier infrared optical detector |
| JP2007512712A (en) * | 2003-11-20 | 2007-05-17 | シオプティカル インコーポレーテッド | Silicon-based Schottky barrier infrared photodetector |
| US7358585B2 (en) | 2003-11-20 | 2008-04-15 | Sioptical, Inc. | Silicon-based Schottky barrier infrared optical detector |
| CN100440522C (en) * | 2003-11-20 | 2008-12-03 | 斯欧普迪克尔股份有限公司 | Silicon-based schottky barrier infrared optical detector |
Also Published As
| Publication number | Publication date |
|---|---|
| GB0207711D0 (en) | 2002-05-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |