GB2386753B - Tunable laser - Google Patents

Tunable laser

Info

Publication number
GB2386753B
GB2386753B GB0207164A GB0207164A GB2386753B GB 2386753 B GB2386753 B GB 2386753B GB 0207164 A GB0207164 A GB 0207164A GB 0207164 A GB0207164 A GB 0207164A GB 2386753 B GB2386753 B GB 2386753B
Authority
GB
United Kingdom
Prior art keywords
tunable laser
tunable
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0207164A
Other versions
GB0207164D0 (en
GB2386753A (en
Inventor
Nickolay Zakhleniuk
Anthony James Holden
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumentum Technology UK Ltd
Original Assignee
Bookham Technology PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bookham Technology PLC filed Critical Bookham Technology PLC
Publication of GB0207164D0 publication Critical patent/GB0207164D0/en
Priority to US10/508,386 priority Critical patent/US20050175044A1/en
Priority to PCT/GB2003/001175 priority patent/WO2003081733A2/en
Priority to AU2003229868A priority patent/AU2003229868A1/en
Priority to EP03722704A priority patent/EP1485975A2/en
Publication of GB2386753A publication Critical patent/GB2386753A/en
Application granted granted Critical
Publication of GB2386753B publication Critical patent/GB2386753B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
GB0207164A 2002-03-19 2002-03-27 Tunable laser Expired - Fee Related GB2386753B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US10/508,386 US20050175044A1 (en) 2002-03-19 2003-03-19 Tuneable laser
PCT/GB2003/001175 WO2003081733A2 (en) 2002-03-19 2003-03-19 Tunable laser
AU2003229868A AU2003229868A1 (en) 2002-03-19 2003-03-19 Tunable laser
EP03722704A EP1485975A2 (en) 2002-03-19 2003-03-19 Tunable laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0206441A GB0206441D0 (en) 2002-03-19 2002-03-19 Tuneable laser

Publications (3)

Publication Number Publication Date
GB0207164D0 GB0207164D0 (en) 2002-05-08
GB2386753A GB2386753A (en) 2003-09-24
GB2386753B true GB2386753B (en) 2005-06-29

Family

ID=9933269

Family Applications (2)

Application Number Title Priority Date Filing Date
GB0206441A Ceased GB0206441D0 (en) 2002-03-19 2002-03-19 Tuneable laser
GB0207164A Expired - Fee Related GB2386753B (en) 2002-03-19 2002-03-27 Tunable laser

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB0206441A Ceased GB0206441D0 (en) 2002-03-19 2002-03-19 Tuneable laser

Country Status (1)

Country Link
GB (2) GB0206441D0 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1504505A2 (en) * 2002-05-15 2005-02-09 Bookham Technology Limited Tuneable laser

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0467781A2 (en) * 1990-07-19 1992-01-22 Kokusai Denshin Denwa Co., Ltd A semiconductor optical element
JPH09222588A (en) * 1996-02-15 1997-08-26 Fujitsu Ltd Optical semiconductor device
US6052400A (en) * 1997-04-17 2000-04-18 Nec Corporation Variable wavelength semiconductor laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0467781A2 (en) * 1990-07-19 1992-01-22 Kokusai Denshin Denwa Co., Ltd A semiconductor optical element
JPH09222588A (en) * 1996-02-15 1997-08-26 Fujitsu Ltd Optical semiconductor device
US6052400A (en) * 1997-04-17 2000-04-18 Nec Corporation Variable wavelength semiconductor laser

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
IEEE Journal of Quantum Electronics Vol 27 No 3 Mar 1991, Analysis and Design o GaAs-AlGaAs Phase Modulator, Sang Sun Lee et al *
IEEE Journal of Selected Topics in Quantum Electronics Vol 3 No 2 April 1997, InGaAs-GaAs Quantum-Dot Lasers, Bimberg et al *
IEEE Photonics Tech Letters Vol 7 No 3 Mar 1995, Ultra-fast optical switching operation of DBR Lasers, Delorme et al *

Also Published As

Publication number Publication date
GB0206441D0 (en) 2002-05-01
GB0207164D0 (en) 2002-05-08
GB2386753A (en) 2003-09-24

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20080327