GB2360154A

GB2360154A - An IGFET oscillator operable on a low supply voltage

Info

Publication number: GB2360154A
Application number: GB0005725A
Authority: GB
Inventors: Michael Harwood
Original assignee: Texas Instruments Ltd
Current assignee: Texas Instruments Ltd
Priority date: 2000-03-09
Filing date: 2000-03-09
Publication date: 2001-09-12
Also published as: DE60121087T2; DE60121087D1; EP1143605B1; GB0005725D0; EP1143605A3; EP1143605A2

Abstract

An oscillator has a PMOS 9' and an NMOS 10' transistor connected in series across a power supply. The output at the node between them is fed back through the gate of the NMOS transistor via a crystal feedback circuit 5. The voltage applied to the gate of the PMOS transistor is set by a biasing circuit to achieve a bias for the NMOS transistor of halfway between the threshold voltage of the NMOS transistor and the positive power supply. To do this, that voltage level is derived from a voltage divider connected across the power supply, comprising two equal resistors 21,22 and an NMOS transistor 19, having its gate connected to its drain, and is applied to the gate of a third NMOS transistor 14 which is connected in series with another PMOS transistor 13 across the power supply. The bias for both PMOS transistors is provided by an operational amplifier 15 which compares the gate voltage of the third NMOS transistor 14 to its source voltage. An advantage of the circuit is that it operates at low power supply voltages. The roles of the p and n channel transistors may be reversed.

Description

2360154 1 AN OSCILLATOR CIRCUIT The present invention relates to

electrical oscillator circuits, and in particular to an oscillator circuit that is suitable for use with a low power supply voltage.

Figure 1 is a block diagram of a well known type of oscillator circuit 1. The circuit comprises an amplifier stage 1 having a gain A and a feedback stage 2 having a gain B. The circuit will tend to oscillate at a frequency at which the loop gain (A x B) is unity and the phase shift around the loop is 3600.

In one form of this oscillator (a Colpitts oscillator) the gain stage 1 is an inverting amplifier and so introduces a phase shift of 1801>. The feedback stage 2 is set to give a further shift of 1801 but only at the desired frequency of oscillation. This ensures that other frequencies are not reinforced (by not having an overall 3600 phase shift) and so are not produced by the oscillator.

Figure 2 is a circuit diagram of a known oscillator circuit 3 of the Colpitts type comprising a standard CMOS inverter 4 as the inverting amplifier 1 and a quartz crystal 6 and two capacitors 7,8 providing the feedback stage 5. The quartz crystal and the two capacitors provide a phase shift of 1800 at the resonant frequency of the crystal, when connected as shown to the inverter as a load. A similar circuit is shown in The Art of Electronics (1985) by Horowitz & Hill at p 169.

This circuit 3 works well for supply voltages in excess of 1.8 volts, but is not effective for lower supply voltages. The reason for that is that each transistor 9,10 in the CMOS inverter 4 requires a threshold voltage to be present across the gate-source junction to conduct. The gate source voltage 2 V,, required to turn on the PMOS device 9 is denoted VTp and that for the NMOS device 10 is denoted VTn. (Further, the more negative of the two supply voltages is herein denoted GND and is taken as the reference point for other potentials in the circuit. The more positive supply voltage is a voltage Vcc above that.) To turn on the PMOS transistor 9 the input voltage to the inverter 4 must be VCC-VTp or lower. Similarly to turn on the NMOS transistor 10 the input to the inverter 4 must be at least VTn (with respect to GND). If Vcc is less than VTp + VT,, there will be a range of inverter input voltages for which both the PMOS 9 and NMOS 10 transistors will be off. and for which the output of the inverter is consequently open circuit. Therefore, in order to function as an inverter, Vcc must be at least VTp + VTn. VTp and VTn, if the process conditions for the formation of the transistors were good, may be 0. 6 V each, but can be higher up to about 1. 1 V each if the process conditions are poor. The circuit of Figure 2 will be unviable when the supply falls below about 1.2 V to 2.2 V depending on the process conditions.

It is an object of the present invention to provide an electrical oscillator circuit that is suitable for us with low voltage supply.

According to the present invention there is provided an oscillator circuit comprising: positive and negative power supplies; a first p- channel insulated gate field effect transistor having its source connected to the positive power supply, its drain connected to a first output node and its gate connected to a first bias potential; a first bias generation circuit for providing said first bias potential; a 3 a first n-channel insulated gate field effect transistor having its source connected to the negative power supply and its drain connected to the said first output node; and a feedback circuit having its input connected to the said first output node and an output connected to the gate of the first NMOS transistor.

Preferably the first bias generation circuit comprises: a second pchannel insulated gate field effect transistor having its source connected to the positive power supply, its drain connected to a second output node and its gate connected to said first bias potential; an second n-channel insulated gate field effect transistor having its source connected to the negative power supply, its drain connected the said second output node and its gate connected to a second bias potential; a control circuit responsive to said second bias potential and the potential at said second output node the for so supplying said first bias potential as to reduce the difference between said second bias potential and the potential at said second output node to a minimum value.

Said minimum value may be 50 mV.

Preferably the control circuit comprises an operational amplifier having its non-inverting input connected to the said second output node and its inverting input connected to the second bias potential, wherein the output of the operational amplifier provides the first bias potential.

The second p-channel and the second n-channel transistors may be respective scaled versions of the first PMOS and the first NMOS transistors, the scaling factor being the same for both. The scaling may be achieved by having different width to 4 length ratios for the channels of the said transistors and/or by having multiple first nchannel and/or p-channel transistors connected in parallel.

Preferably the second bias potential is approximately half way between potential of the positive supply and a level equal to potential of the negative power supply plus the gate-source threshold voltage of the first n-channel transistor.

The second bias potential may be provided by a second bias generation circuit comprising a third n-channel insulated gate field effect transistor with its source connected to the negative supply, and its gate and drain connected together and to a potential divider, the potential divider comprising two resistors of equal value, and the node between those two resistors providing said second bias potential.

The first bias generation circuit may be arranged to provide the first bias potential at a level that is below a level equal to the potential of the negative power supply plus the gate-source threshold voltage of the first n-channel transistor.

The oscillator circuit may comprise means for equalising, under DC conditions, the potential of said first output node and that of the gate of said first n-channel transistor, which may be a resistor connected between said first output node and the gate of said first n-channel transistor.

The feedback circuit may be arranged to provide a phase shift of 1800 at the frequency of oscillation.

The feedback circuit may comprise a quartz crystal, a ceramic resonator or an inductor, preferably in combination with the capacitors, for example, as described above.

The power supplies for the oscillator circuit may have a potential difference of less than the sum of the gate-source threshold voltages of the said first p-channel and said first n-channel transistors.

Preferably the n-channel and p-channel transistors are enhancement mode transistors.

The p-channel and n-channel transistors may be formed in silicon and have silicon oxide between the channels and the gates.

Alternatively, although it is not preferred, the roles of the p-channel and n-channel transistors may be reversed, with the gates of the first and second n-channel transistors being connected to the first bias voltage, the gate of the first pchannel transistor being connected the output of the feedback circuit and the gate of the second p-channel transistor being connected to the second bias potential.

6 An embodiment of the invention will now be described, by way of example only, with reference to the accompanying drawings, of which:

FIGURE 1 is a block diagram of a know type of oscillator circuit.

FIGURE 2 is a known oscillator circuit of the type shown in Figure 1. FIGURE 3 is the basic oscillator circuit of the preferred embodiment of the invention.

FIGURE 4 is a circuit used in the preferred embodiment to set the value of Vcont,ol in the circuit of Figure 3. FIGURE 5 is a graph showing the operating range of the inverter of Figure 3 and the preferred bias point.

FIGURE 6 is a circuit is used in the preferred embodiment used to set the bias voltage in the circuit of Figure 5.

FIGURE 7 is a complete circuit diagram of the preferred embodiment of the present invention.

Figure 3 shows the basic oscillator circuit 11 of the preferred embodiment of the present invention. Compared to the prior art circuit of Figure 2 the circuit 11 is the same except that inverter 41 no longer has the gates of the PMOS 91 and NMOS 101 transistors connected in common. The feedback connection from the crystal feedback stage 5 is connected to the gate of the NMOS transistor 101 while the gate of the PMOS transistor 91 is held at a constant bias voltage Vcontrol. The bias provided turns PMOS transistor 91 on and the feedback signal is inverted through the action of the NMOS transistor 101. Since the gates are not connected in common, the constraint of Vcc being greater than VTp + VTn no longer applies, with the result that, if necessary, the gate of the PMOS transistor 91 can be held below VT, above GND.

7 Consequently this circuit may be used with low values of Vcc, in particular less than the 1.2 V to 2.2 V mentioned above.

Figure 4 shows an example of a biasing circuit 12 that is used in the preferred embodiment to provide the bias voltage Vc=tr,l to the gate of the PMOS transistor 91 in the circuit of Figure 3. The control circuit 12 comprises a PMOS 13 and an NMOS transistor 14 that are scaled versions of the respective PMOS 91 and NMOS 101 transistors of Figure 3 the ratio of the width to length (W/L) ratio of PMOS transistor 91 to the W/L ratio of PMOS transistor 13 is equal the ratio of the W/L ratio of the NMOS transistor 10 1 to the W/L ratio of NMOS transistor 14. Preferably the W/L ratio for transistors 91 and 101 is fourteen times that for transistors 13 and 14. The transistors 91, 101 of Figure 3 provide substantial currents to drive the oscillator, but those of Figure 4 may be much smaller to save on the area used by the devicesThe scaling is more accurate (due to edge effects) if transistors 91 and 101 comprise multiple (preferably fourteen) transistors, identical to transistors 13 and 14, connected in parallel. A further bias voltage Vbia., is applied to the gate of the NMOS transistor 14 and also to the inverting input of an operational amplifier 15. The drain of the NMOS transistor 14 is connected to the drain of the PMOS transistor 13 and also the non-inverting input of the operational amplifier 15. The output of the operational amplifier is the bias voltage Vcontrol applied to the gate input to the PMOS transistor 91 in Figure 3. Further the bias voltage Vcontrol is applied to the gate of the PMOS transistor 13 of the control circuit 12 of Figure 4.

The negative feedback in the circuit of Figure 4 ensures that the inverting and non-inverting inputs to the operational amplifier are at approximately the same voltage (i.e. Vbi,,) 8 by setting Vwnt,ol to a suitable value to bias the PMOS transistor 13. It is preferred to have a low gain for operational amplifier 15 with the result that the difference between its inputs is held to about 50 mV or less.

Further, the PMOS transistor 91 of the basic oscillator circuit of Figure 3 will also tend to provide Vbi,s as its output voltage (at the node between the PMOS transistor 91 and the NMOS transistor 101) because it has the same gate voltage as the PMOS transistor 13 of the biasing circuit of Figure 4. However, for this to occur more accurately the gate NMOS transistor 101 of the circuit of Figure 3 should also be biased to the same potential as is applied to the gate of the NMOS transistor 14 of the control circuit of Figure 4. This is achieved by connecting a resistor 17 between the output of the inverting amplifier stage 41 of the basic oscillator circuit of Figure 3 and the gate of its NMOS transistor 10 1 Further, the DC level of the input to transistor 10 should be set by some means and as stated above this level is preferably Vbias. (Without the DC level being set, for example, by resistor 17, the behaviour of the oscillator would be ill defined.) Preferably resistor 17 should have a higher impedance than the feedback circuit.

Figure 5 show the operating region of the NMOS transistor 101 of the basic oscillator circuit of Figure 3. If the gate voltage, denoted Vfeedback, is less than that transistor's threshold voltage VT, then the transistor will be off. With a gate voltage of between VTn and the positive supply Vcc the transistor 101 will conduct, which is denoted by the shaded region in Figure 6, and will be fully on when the gate voltage is Vcc(or a little below if transistor 101 is stronger than transistor 91). Therefore, the bias voltage of the NMOS 9 transistor 14 should preferably be set half way between the supply voltage Vcc and the threshold voltage VT,, i.e. at:

Vbias = (Vec+VTn) / 2 (above GND) This enables the output of the inverting stage 41 to swing equally in both directions in response to the input to that stage. Preferably the transistors 91 and 10 1 should be sized and the bias point chosen to avoid clipping of the waveform output by the oscillator and there may be cases where the ideal bias point is above or below that stated above.

Figure 6 shows a circuit 18 that can be used to provide a suitable bias voltage (Vbia,) for the NMOS transistor 14 circuit of Figure 4. An NMOS transistor 19 is provided with its gate input tied to its drain terminal, and its source input tied to ground. The width to length (W/L) ratio of the transistor is preferably large (i.e. the device is many times wider than it is long) so that the drain input of the NMOS transistor 19 will be set at approximately the threshold voltage of the transistor VT,. This value is process dependent and will therefore be equal to VTn for the transistor 101of Figure 3, provided that they are made during the same process at the same time, for example, if they are made on the same die. A pair of resistors 20,21 is connected to provide a simple voltage divider so that Vbias is set midway between Vcc and VT, as is preferred. A PMOS transistor (not shown) may be inserted between resistor 21 and Vcc with its gate connected to a control signal for disabling the circuit for, for example, during a power saving mode.

Figure 7 shows the complete circuit diagram of the preferred embodiment of the present invention, with the circuit of Figure 4 setting the value Of Vcontrol for the circuit of -A ' Figure 3, and the circuit of Figure 6 setting the value of Vbi,, for the circuit of Figure 4.

This circuit with the preferred component values listed below is suitable for generating frequencies of 5 to 30 MHz. the output waveform (at the node between the crystal 6 and the capacitor 8) is nearly sinusoidal. (The output of the inverter 4 is a distorted sinusoid.) Component Parameter Value Resistor 20 resistance 30 kQ Resistor 21 resistance 30 kn Transistor 19 W/L 294/0.49 Transistor 13 W/L 21/0.49 Transistor 14 W/L 7/0.49 Transistor 91 W/L 294/0.49 Transistor 101 W/L 98/0.49 Resistor 17 resistance 150 kn Capacitor 8 capacitance 20 pF Capacitor 7 capacitance 20 pF Crystal 6 type parallel fundamental mode crystal Crystal 6 frequency 5 to 30 MHz While the preferred embodiment uses the quartz crystal feed back circuit 5 (Figure 3) to provide the phase shift, the phase shift could be provided by any other suitable circuit, for example, by using a ceramic resonator or an inductor 15 coil.

An alternative, but not preferred version of the circuit of Figure 7 has the roles of the PMOS and NMOS transistors reversed. In this version Vcontol is connected to the gates of 20 NMOS transistors 101 and 14, the gate of PMOS transistor 91 is connected to Vf,edback and the gate of PMSO transistor 13 is connected to Vbias. Vbias is generated by a circuit comprising a PMOS transistor having its source connected together and gate and drain connected to GND via a voltage divider of two equal resistors, Vbia5 being supplied from the node between them.

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Claims

CLAIMS:

An oscillator circuit comprising: positive and negative power supplies; a first p-channel insulated gate field effect transistor having its source connected to the positive power supply, its drain connected to a first output node and having a gate; a first n-channel insulated gate field effect its source connected to the negative power its drain connected to the said first output node; transistor supply and and a first bias generation circuit for providing a first bias potential to one of the gate of the first p-channel transistor and the gate of the first n-channel transistor; a feedback circuit having its input connected to the said first output node and an output connected to the other of the gate of the first p-channel transistor and the gate of the first n-channel transistor.

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2. An oscillator circuit as claimed in claim 1, wherein the f irst bias generation circuit comprises: a second p-channel insulated gate field effect transistor having its source connected to the positive power supply, its drain connected to a second output node and, if the f irst bias potential is connected to the gate of the first p-channel field effect transistor, having its gate connected to said first bias potential or, if the first bias potential is connected to the first n-channel transistor, connected to a second bias potential; a second n-channel insulated gate field effect transistor having its source connected to the negative power supply, its drain connected the said second output node and, if the first bias potential is connected to the gate of the first p-channel transistor, having its gate connected to the second bias potential or, if the first bias potential is connected to the first n-channel transistor, connected to the first bias potential; a control circuit responsive to said second bias potential and the potential at said second output node the for so supplying said first bias potential as to reduce the difference between said second bias potential and the potential at said second output node to a minimum value.
3. An oscillator circuit as claimed in claim 2 wherein said minimum value is less than 50 mV.
4. An oscillator circuit as claimed in claim 2 or claim 3, wherein the control circuit comprises an operational amplifier having its non-inverting input connected to the said second output node and its inverting input connected to the second bias potential, wherein the output of the operational amplifier provides the first bias potential.

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5. An oscillator circuit as claimed in any one of claims 2 to 4, wherein the second p-channel transistor and the second nchannel transistor are respective smaller scaled versions of the first p-channel transistor and the first n-channel transistor, the scaling factor being the same for both.
6. An oscillator circuit as claimed in claim 5 wherein the scaling is achieved by having different width to length ratios for the channels the said transistors.
7. An oscillator as claimed in claim 5 or claim 6 wherein the scaling is achieved by having multiple first n-channel and/or p-channel transistors connected in parallel.
8. An oscillator circuit as claimed in any one of claims 2 to 7, wherein the second bias potential is approximately half way between potential of the positive supply and a level equal to potential of the negative power supply plus the gate-source threshold voltage of the first n-channel transistor, if the first bias potential is connected to the first pchannel transistor, or is approximately half way between potential of the negative supply and a level equal to potential of the positive power supply minus the gate-source threshold voltage of the first p-channel transistor, if the first bias potential is connected to the first n-channel transistor.

is
9. An oscillator circuit as claimed in claim 8, wherein the second bias potential is provided by a second bias generation circuit comprising a third n-channel field effect transistor with its source connected to the negative supply, and its gate and drain connected together and to the positive power supply via a potential divider, the potential divider comprising two resistors of equal value, and the node between those two resistors providing said second bias potential, if the first bias potential is connected to the first p-channel transistor, or is provided by a second bias generation circuit comprising a third p-channel insulated gate field effect transistor with its source connected to the positive supply, and its gate and drain connected together and to the negative power supply via a potential divider, the potential divider comprising two resistors of equal value, and the node between those two resistors providing said second bias potential, if the first bias potential is connected to the first n-channel transistor.
10. An oscillator circuit as claimed in any preceding claim wherein the first bias generation circuit is arranged to provide the f irst bias potential at a level that is below a level equal to the potential of the negative power supply plus the gate-source threshold voltage of the first n channel transistor, if it is connected to the first p-channel transistor, or to provide the f irst bias potential at a level that is above a level equal to the potential of the positive power supply minus the gate-source threshold voltage of the f irst p-channel transistor, if it is connected to the first n-channel transistor.

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11. An oscillator circuit as claimed in any preceding claim comprising means for equalising, under DC conditions, the potential of said first output node and the potential of the gate of said first n-channel transistor if the first bias potential is connected to the first pchannel transistor, or for equalising, under DC conditions, the potential of said first output node and the potential of the gate of said first p-channel transistor if the first bias potential is connected to the first n-channel transistor.
12. An oscillator circuit as claimed in claim 11, wherein said means for equalising comprises a resistor connected between said first output node and the gate of said first nchannel transistor if the first bias potential is connected to the first p-channel transistor, or comprises a resistor connected between said first output node and the gate of said first p-channel transistor if the first bias potential is connected to the first n-channel transistor.
13. An oscillator circuit as claimed in any preceding claim, wherein the feedback circuit is arranged to provide a phase shift of 1800 at the frequency of oscillation.
14. An oscillator circuit as claimed in any preceding claim, 25 wherein the feedback circuit comprises a quartz crystal.
15. An oscillator circuit as claimed in any one of claims 1 to 13, wherein the feedback circuit comprises a ceramic resonator.
16. An oscillator circuit as claimed any one of claims 1 to 13 wherein the feedback circuit comprises an inductor.

rr 1
17 17. An oscillator as claimed in any preceding claim wherein the first bias potential is connected to the first p-channel transistor.
18. An oscillator as claimed in any one of claims 1 to 16 wherein the first bias potential is connected to the first nchannel transistor.
19. An oscillator as claimed in any preceding claim wherein the said insulated gate field effect transistors have oxide gates.
20. An oscillator circuit substantially as shown in, and as described with reference to, Figure 3, or Figures 3 and 4, or Figures 3, 4 and 6.
21. A circuit comprising an oscillator circuit as claimed in any preceding claim arranged to provide a potential difference between the said positive and negative power supplies of less than the sum of the gate-source threshold voltages of the said first p-channel and said first n-channel transistors.