GB2350374A - Deposition apparatus - Google Patents
Deposition apparatus Download PDFInfo
- Publication number
- GB2350374A GB2350374A GB9910724A GB9910724A GB2350374A GB 2350374 A GB2350374 A GB 2350374A GB 9910724 A GB9910724 A GB 9910724A GB 9910724 A GB9910724 A GB 9910724A GB 2350374 A GB2350374 A GB 2350374A
- Authority
- GB
- United Kingdom
- Prior art keywords
- shield
- workpiece
- support
- transport path
- shielding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Abstract
An apparatus for depositing a layer of material on to a workpiece includes chamber 11, a sputter target 12, a wafer support 13, wafer transport aperture 14 and a wafer transport mechanism 15. The wafer transfer mechanism delivers the wafers along a transport path 16. An annular shield 19 is disposed between the support 13 and the target 12 and lies in the wafer transport path 16. Pins 30 are provided to lift the annular shield out of the transport path 16.
Description
2350374 "Deposition Apparatuou This invention relates to a apparatus for
depositing a layer of material on to a workpiece.
In many manufacturing processes. including the manufacture of semiconductor devices, sensors and MEMS, there is a need to deposit layers or thin films of materials onto workpieces. In physical vapour deposition there is a source of material within a chamber whereby material is ejected from the source onto the workpiece to form a layer. The source of material may be a sputter target or it may be an evaporated source or some other source of material that forms at least part of a deposited layer. In any of these cases the material tends to be deposited not only on the workpiece but also on other parts of the chamber in which the process has taken place. Traditionally, the solution is has been to cover all long term exposed surfaces with removable shields. Workpieces are usually located on a support and providing shielding around and below the support can be particularly awkward, because such shields can be expensive to form and difficult to locate, given that it is desirable that no threaded fasteners should be used within a chamber, because of the danger of creating damaging particles.
Particular problems arise in connection with the support and the workpiece. Two manufacturing situations tend to exist. The first is where the workpiece is smaller than the support and lies within its periphery. In that case extra deposited material can affix the workpiece to the 2 support or can build up on the surface of the support causing incorrect seating of subsequent workpieces. The second situation is where the workpiece overhands the support. In this arrangement it effectively shields the support, but unwanted deposition can occur on both the edge and the back side of the workpiece. (In some situations manufacturers do require deposition on the edge).
The best solution proposed to date to this problem has been to provide a fixed shield which overlies the periphery of the workpiece and the support, but this has a number of disadvantages. First it tends to preclude deposition on the edge of the wafer, when that is desirable, and secondly it makes the loading of workpieces on to the support extremely complex. Essentially the whole support has to be moved away is from the shield so as to give sufficient room for the wafer to be lifted from the support and then removed by a transport mechanism. As very frequently the support will have electrical, cooling and mechanical connections, the need to move the support introduces significant expense and complication.
From one aspect the invention consists in apparatus for depositing a layer of material onto a workpiece including a chamber, a source of material, a workpiece support for supporting a workpiece with an exposed surface facing the material source onto which a layer is deposited, means for loading and unloading the workpiece along a transport path and a shield disposed between the support and the material source for limiting the amount of material deposited on or 3 adjacent to the periphery of the support or workpiece characterised in that the shield lies in the transport path and in that the apparatus further comprises a mechanism for moving the shield out of the transport path during loading 5 and unloading.
The apparatus may further comprise a further shield surrounding the support for shielding the back of the periphery of the workpiece and, in some embodiments, the further shield may shield the edge of the workpiece.
It is preferred that, when in its shield position, the first-mentioned shield forms a labyrinth path with the support, the further shield and/or the workpiece. To enhance this labyrinth path the further shield may have a radial extension.
The apparatus may further comprise means for lifting and lowering the workpiece into or from the transport path and these lifting and lowering means may incorporate or be linked to the mechanism for moving the shield so that as the workpiece is lifted off the support, the shield moves out of the transport path. The lifting/lowering means may include a liftable frame carrying a first set of pins for engaging the workpiece and a second set of pins for engaging the shielding. The second set of pins may serve as the support for the first mentioned shield, when it is in its shielding position as well as during movement of the shield.
The further shield may fall away as it extends radially outwardly to allow greater deposition to take place on its surface before the deposition upon it builds up to a level 4 to contact the workpiece backside, or interfere with workpiece transportation.
The chamber may have or define a ledge formation and in that case the first mentioned shield may have a corresponding and cooperating formation whereby, when the first mentioned shield is in its shielding position, the formations form a labyrinth.
The first-mentioned shield will have a shape which is generally dictated by the shape of the periphery of the workpiece e.g. for a generally circular semi-conductor wafer, the first- mentioned shield will be generally annular.
From a further aspect the invention consists in apparatus for depositing a layer including a source of material, a workpiece support, a first shield for shielding the back periphery of a workpiece on the support and a second shield, interposed between the source and the first shield to shield the first shield.
Although the invention has been defined above it is to be understood that it includes any inventive combination of the features set out above or in the following description.
The invention may be performed in various ways and specific embodiments will now be described, by way of example, with reference to the accompanying drawings in which:
Figure 1 illustrates a computer simulation of an edge shield, a workpiece and a workpiece support after a single deposition cycle; Figure 2 is a corresponding simulation after a sputter target has been consumed; Figure 3 is a detailed cross-section taken at the area of the edge of a support and the corresponding shielding of one embodiment of the invention; 5 Figures 4 and 5 correspond to Figures 1 and 2 for a different embodiment of the invention and Figure 6 corresponds to Figure 3 for that different embodiment; Figure 7 is a cross-sectional view of a more substantial part of the chamber in which the embodiment of figure 3 is utilised; and Figure 8 is a corresponding view to Figure 7 for the embodiment of Figure 6.
Referring first to Figures 7 and 8 a deposition apparatus is generally indicated at 10 and includes a chamber, generally indicated at 11, a sputter target 12, a wafer support 13, wafer transport aperture 14 and a wafer transport mechanism 15, which is shown schematically. The wafer transport mechanism 15 delivers the wafers along a transport path, which is indicated at 16. 20 As will be described in more detail below semiconductor wafers 17 can be lifted from the support 13 by a lift mechanism generally indicated at 18. In this way they can be lifted into the transport path 16 and conversely lowered from that path onto the support 13. 25 An annular shield 19 is disposed between the support 13 and the target 12 and in fact lies in the wafer transport path 16 for reasons which will be set out below. Turning now to Figures 1 to 3 the relationship between 6 the annular shield 19, the wafer 17 and the wafer support 13 can be seen in more detail. Thus in Figures 1 and 2 it can be seen that the leading edge 20 of the annular shield 19 overhangs the wafer 17, which in turn overhangs the support 13. As can be seen the layer of deposited material 21 builds up on the annular shield 19 as the cycles take place and this increases the shielded area, without too significantly affecting the deposition 22 on the wafer.
To an extent this simulation in Figures 1 and 2 is equally applicable to the present embodiment and the previously described prior art arrangement. However, as has been mentioned, the position of the annular shield 19 can present loading and unloading problems and also, although a labyrinth path 23 is created between the wafer 17 and the is annular shield 19, this is not necessarily sufficient to protect against back deposition on the wafer.
As can be seen in Figure 3 the applicants overcome the second of these problems by providing a further annular shield 24 around the periphery of the support 13 so that it underlies the overhanging portion 25 of the wafer 17 and thus prevents deposition on that portion. The further shield has a radial extension 26 which upstands to protect the edge 27 of the wafer 17 and the extension 26 also extends along the under surface of the shield 19 to increase the efficacy of the labyrinth path 23.
As can be seen in Figure 3, apertures 28 are formed in the back shield 24 to allow lifting pins 29 to pass therethrough and lift the wafer 17 from the support 13. The 7 annular shield 19 is supported on another set of pins 30 and, as can be seen in Figure 8 both sets of pins are carried by a ring 31. The ring can be lifted so that as the first set of pins 29 lift the wafer 17 ancl the second set of pins 36 lift the annular shield 19 out of the transport path 16 allowing the wafer transport mechanism 15 to remove the lifted wafer 17 and replace it with the next one. Once the following wafer is loaded on the first set of pins 29, the ring 31 is lowered so that the wafer 17 is placed on the support 13 and the annular shield 19 returns to its operative position.
It will be seen that the annular shield 19 carries an L-cross section element 32 at its outer edge which is arranged to cooperate with a ledge 33 on the inner chamber is shielding 34. These two ledges 32, 33 prevent most material passing down below the annular shield 19, but provide a serpentine pump down path as illustrated by the arrow in Figure 7.
Turning to Figures 4 to 6 and 8, a corresponding arrangement is illustrated for the situation where it is desired to be able to deposit material on the edge of the wafer 17. In this case annular shield 19 does not extend to cover that edge, but rather acts as a shield to limit material being deposited upon the radial extension 26' which falls away from the exposed edge, whilst still maintaining the labyrinth.
This inclined construction of the extension 261 means that it takes a significant period for the material, which 8 does get deposited thereon, to build up to a level at which it would interfere with the seating of the wafer 17 or the transport thereof. Otherwise, this arrangement operates in a similar manner as the arrangement illustrated in Figures 5 1 to 3 and 7.
Extra shielding is provided at 34 and 35.
The arrangements discussed above provide a very elegant solution to the problem described. Indeed it has been found that the shielding is such that repeatable and consistent deposition on wafers can be achieved for the whole life of a target without any need to replace the shielding and without unwanted back deposition or edge deposition, where that is shielded against. The arrangement avoids the need for movement of the support between each wafer, although a progressive movement of the support towards the target could take place to compensate for the fact that the target is being consumed. The arrangement is particularly convenient in that case, because it allows for corresponding adjustment of the position of the shields, simply by altering the rest position of the ring. The transport path location can equally be adjusted.
In certain processing arrangements pre-set positions for the support and annular shield 19 may be selected to suite particular processing phases. The above arrangement is still beneficial both because it can provide shielding of the backshielding, in the Figures 4 to 6 and 8 arrangement in particular, and because it enables the annular shield position in the transfer plane to be one of the options.
9
Claims (12)
1 Apparatus for depositing a layer of material on to a workpiece including a chamber, a source of material, a workpiece support for supporting a workpiece with an exposed surface facing the material source onto which a layer is deposited, means for loading and unloading the workpiece along a transport path and a shield disposed between the support and the material source for limiting the amount of material deposited on or adjacent to the periphery of the support or workpiece characterised in that the shield lies in the transport path and in that the apparatus further comprises a mechanism for moving the shield out of the transport path during loading and unloading.
2. Apparatus as claimed in Claim 1 further comprising a is further shield surrounding the support for shielding the back of the periphery of the workpiece.
3. Apparatus as claimed in Claim 1 or Claim 2 wherein, in its shield position, the first mentioned shield forms a labyrinth path with the support, the further shield and/or the workpiece.
4. Apparatus as claimed in Claim 2 or Claim 3 as dependent on Claim 2 wherein the further shield has a radial extension.
5. Apparatus as claimed in any one of the preceding claims 25 further comprising means for lifting and lowering the workpiece into or from the transport path.
6. Apparatus as claimed in Claim 5 wherein the lifting/lowering means incorporates or is linked to the mechanism for moving the shield.
7. Apparatus as claimed in Claim 6 wherein the lifting/lowering means includes a liftable frame carrying a first set of pins for engaging the workpiece and a second 5 set of pins for engaging the shielding.
8. Apparatus as claimed in Claim 2 or any one of Claims 3 to 7 as dependent on Claim 2 wherein the further shield shields the edge of the workpiece.
9. Apparatus as claimed in Claim 2 or any one of Claims 3 to 7 as dependent on Claim 2 wherein the further shield falls away as it extends radially outwardly toallow deposition to take place on the edge of-the workpiece.
10. Apparatus as claimed in any one of the preceding claims wherein the chamber has or defines a ledge formation and wherein the first mentioned shield has a corresponding and cooperating formation whereby, when the first mentioned shield is in its shielding position the formations form a labyrinth.
11. Apparatus for depositing a layer including a source of 20 material, a workpiece support, a first shield for shielding the back periphery of a workpiece on the support and a second shield interposed between the source and the first shield to shield the first shield.
12. Apparatus for depositing a layer substantially as 25 hereinbefore defined with reference to the accompanying drawings.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9910724A GB2350374B (en) | 1999-05-11 | 1999-05-11 | Deposition apparatus |
DE10022224A DE10022224A1 (en) | 1999-05-11 | 2000-05-08 | Deposit device |
KR1020000024828A KR20000077203A (en) | 1999-05-11 | 2000-05-10 | Deposition Apparatus |
JP2000142308A JP4741053B2 (en) | 1999-05-11 | 2000-05-10 | Deposition equipment |
US09/568,987 US6533868B1 (en) | 1999-05-11 | 2000-05-11 | Deposition apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9910724A GB2350374B (en) | 1999-05-11 | 1999-05-11 | Deposition apparatus |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9910724D0 GB9910724D0 (en) | 1999-07-07 |
GB2350374A true GB2350374A (en) | 2000-11-29 |
GB2350374B GB2350374B (en) | 2003-09-24 |
Family
ID=10853097
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9910724A Expired - Lifetime GB2350374B (en) | 1999-05-11 | 1999-05-11 | Deposition apparatus |
Country Status (5)
Country | Link |
---|---|
US (1) | US6533868B1 (en) |
JP (1) | JP4741053B2 (en) |
KR (1) | KR20000077203A (en) |
DE (1) | DE10022224A1 (en) |
GB (1) | GB2350374B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2398166A (en) * | 2003-02-07 | 2004-08-11 | Trikon Technologies Ltd | Electrostatic clamping of thin wafers in plasma processing vacuum chambers |
GB2419895A (en) * | 2004-11-04 | 2006-05-10 | Trikon Technologies Ltd | Shielding design for backside metal deposition |
US20110155059A1 (en) * | 2009-12-28 | 2011-06-30 | Canon Anelva Corporation | Thin film forming apparatus, thin film forming method, and shield component |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6630201B2 (en) * | 2001-04-05 | 2003-10-07 | Angstron Systems, Inc. | Adsorption process for atomic layer deposition |
US6800173B2 (en) * | 2000-12-15 | 2004-10-05 | Novellus Systems, Inc. | Variable gas conductance control for a process chamber |
DE10131673A1 (en) * | 2001-06-29 | 2003-01-30 | Infineon Technologies Ag | Carrier for a wafer |
US20050176252A1 (en) * | 2004-02-10 | 2005-08-11 | Goodman Matthew G. | Two-stage load for processing both sides of a wafer |
US20080264340A1 (en) * | 2004-04-12 | 2008-10-30 | Novellus Systems, Inc. | Moving interleaved sputter chamber shields |
US8156892B2 (en) * | 2008-05-19 | 2012-04-17 | Novellus Systems, Inc. | Edge profiling for process chamber shields |
CN102356178A (en) * | 2009-01-16 | 2012-02-15 | 应用材料公司 | Charged particle beam pvd device, shielding device, coating chamber for coating substrates, and method of coating |
US20100181187A1 (en) * | 2009-01-16 | 2010-07-22 | Applied Materials, Inc. | Charged particle beam pvd device, shielding device, coating chamber for coating substrates, and method of coating |
US20110217465A1 (en) * | 2010-03-08 | 2011-09-08 | Novellus Systems Inc. | Shields for substrate processing systems |
US10283334B2 (en) * | 2014-08-22 | 2019-05-07 | Applied Materials, Inc. | Methods and apparatus for maintaining low non-uniformity over target life |
CN110670042B (en) * | 2019-12-09 | 2020-04-03 | 上海陛通半导体能源科技股份有限公司 | Physical vapor deposition apparatus for thick film deposition |
JP7398988B2 (en) | 2020-03-13 | 2023-12-15 | 東京エレクトロン株式会社 | sputtering equipment |
US11492697B2 (en) * | 2020-06-22 | 2022-11-08 | Applied Materials, Inc. | Apparatus for improved anode-cathode ratio for rf chambers |
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WO1986006753A1 (en) * | 1985-05-09 | 1986-11-20 | Seagate Technology | IN-lINE DISK SPUTTERING SYSTEM |
US4828668A (en) * | 1986-03-10 | 1989-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering system for deposition on parallel substrates |
US5259881A (en) * | 1991-05-17 | 1993-11-09 | Materials Research Corporation | Wafer processing cluster tool batch preheating and degassing apparatus |
WO1996035823A1 (en) * | 1995-05-10 | 1996-11-14 | Seagate Technology, Inc. | Transport system for thin film sputtering system |
JPH09157839A (en) * | 1995-12-04 | 1997-06-17 | Hitachi Ltd | Thin film forming device |
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JPH04285160A (en) * | 1991-03-13 | 1992-10-09 | Seiko Instr Inc | Sputtering device |
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JPH0799162A (en) * | 1993-06-21 | 1995-04-11 | Hitachi Ltd | Cvd reactor apparatus |
JP3563095B2 (en) * | 1993-10-28 | 2004-09-08 | 株式会社ルネサステクノロジ | Method for manufacturing semiconductor device |
TW254030B (en) * | 1994-03-18 | 1995-08-11 | Anelva Corp | Mechanic escape mechanism for substrate |
JPH09111447A (en) * | 1995-10-17 | 1997-04-28 | Applied Materials Inc | Sputtering apparatus |
JP3477953B2 (en) * | 1995-10-18 | 2003-12-10 | 東京エレクトロン株式会社 | Heat treatment equipment |
US6051122A (en) * | 1997-08-21 | 2000-04-18 | Applied Materials, Inc. | Deposition shield assembly for a semiconductor wafer processing system |
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-
1999
- 1999-05-11 GB GB9910724A patent/GB2350374B/en not_active Expired - Lifetime
-
2000
- 2000-05-08 DE DE10022224A patent/DE10022224A1/en not_active Ceased
- 2000-05-10 JP JP2000142308A patent/JP4741053B2/en not_active Expired - Lifetime
- 2000-05-10 KR KR1020000024828A patent/KR20000077203A/en not_active Application Discontinuation
- 2000-05-11 US US09/568,987 patent/US6533868B1/en not_active Expired - Lifetime
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WO1986006753A1 (en) * | 1985-05-09 | 1986-11-20 | Seagate Technology | IN-lINE DISK SPUTTERING SYSTEM |
US4828668A (en) * | 1986-03-10 | 1989-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering system for deposition on parallel substrates |
US5259881A (en) * | 1991-05-17 | 1993-11-09 | Materials Research Corporation | Wafer processing cluster tool batch preheating and degassing apparatus |
WO1996035823A1 (en) * | 1995-05-10 | 1996-11-14 | Seagate Technology, Inc. | Transport system for thin film sputtering system |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2398166A (en) * | 2003-02-07 | 2004-08-11 | Trikon Technologies Ltd | Electrostatic clamping of thin wafers in plasma processing vacuum chambers |
GB2398166B (en) * | 2003-02-07 | 2007-03-28 | Trikon Technologies Ltd | Electrostatic clamping of thin wafers in plasma processing vacuum chamber |
GB2419895A (en) * | 2004-11-04 | 2006-05-10 | Trikon Technologies Ltd | Shielding design for backside metal deposition |
GB2419895B (en) * | 2004-11-04 | 2010-09-22 | Trikon Technologies Ltd | Shielding design for backside metal deposition |
US20110155059A1 (en) * | 2009-12-28 | 2011-06-30 | Canon Anelva Corporation | Thin film forming apparatus, thin film forming method, and shield component |
US9194038B2 (en) * | 2009-12-28 | 2015-11-24 | Canon Anelva Corporation | Thin film forming apparatus, thin film forming method, and shield component |
Also Published As
Publication number | Publication date |
---|---|
GB2350374B (en) | 2003-09-24 |
US6533868B1 (en) | 2003-03-18 |
KR20000077203A (en) | 2000-12-26 |
JP4741053B2 (en) | 2011-08-03 |
DE10022224A1 (en) | 2000-11-16 |
JP2000355762A (en) | 2000-12-26 |
GB9910724D0 (en) | 1999-07-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) |
Free format text: REGISTERED BETWEEN 20150716 AND 20150722 |
|
PE20 | Patent expired after termination of 20 years |
Expiry date: 20190510 |