GB2344931A - Ion beam processing apparatus and method of operating ion source therefor - Google Patents

Ion beam processing apparatus and method of operating ion source therefor Download PDF

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Publication number
GB2344931A
GB2344931A GB9929564A GB9929564A GB2344931A GB 2344931 A GB2344931 A GB 2344931A GB 9929564 A GB9929564 A GB 9929564A GB 9929564 A GB9929564 A GB 9929564A GB 2344931 A GB2344931 A GB 2344931A
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United Kingdom
Prior art keywords
power supply
ion source
deceleration
electrode
acceleration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
GB9929564A
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GB9929564D0 (en
Inventor
Tanaka Shigeru
Isao Hashimoto
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Hitachi Ltd
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Hitachi Ltd
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Publication date
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Publication of GB9929564D0 publication Critical patent/GB9929564D0/en
Publication of GB2344931A publication Critical patent/GB2344931A/en
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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23HWORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H1/00Electrical discharge machining, i.e. removing metal with a series of rapidly recurring electrical discharges between an electrode and a workpiece in the presence of a fluid dielectric
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00Ion beam tubes
    • H01J27/02Ion sources; Ion guns
    • H01J27/08Ion sources; Ion guns using arc discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004Charge control of objects or beams
    • H01J2237/0041Neutralising arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/047Changing particle velocity
    • H01J2237/0475Changing particle velocity decelerating
    • H01J2237/04756Changing particle velocity decelerating with electrostatic means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/08Ion sources

Abstract

A plasma generating gas is introduced into a vacuum chamber comprising processing chamber 11 and ion source 1 in which a plasma is produced.. The ion source comprises arc power supply 7 for producing a plasma, power supply 8 which applies a positive voltage across the acceleration electrode 2, power supply 9 which applies a negative voltage across deceleration electrode 3 and filament 5 which emits thermoelectrons upon heating by source 6. Ions are extracted from the plasma as an ion beam. The negative potential applied across electrode 3 prevents electrons from flowing into the ion source 1 from processing chamber 11. The acceleration electrode may be activated prior to the deceleration electrode, they may be activated simultaneously or they may be activated separately and then simultaneously or vice versa. The processing chamber may comprise holder 13 for holding workpieces 12, neutralizer 14 for generating electrons and shutter 15 to prevent workpieces 12 being irradiated with ions or electrons. The operation of electrodes 2,3 may also cause short-circuiting resulting in the burning-off and removal of particles attached to the electrodes.

Description

2344931 ION BEAM PROCESSING APPARATUS AND METHOD OF OPERATING ION SOURCE
THEREFOR The present invention relates generally to an ion beam processing apparatus and a method of operating an ion source therefor, and more particularly to a method of operating an ion source to extract, as an ion beam, ions within a plasma generated in the ion source for use in an ion beam processing apparatus forperforming ionbeammilling, ion beam sputtering and so on, and a method oil operating an ion beam processing apparatus which uses the ion source.
The ion beam processing apparatus employs plus ions which, when irradiated to collide with a workpiece, cause accumulation of a plus charge on the surface of the workpiece, so that the ion beam processing apparatus cannot continuously collide a sufficient ion beam against a processed site on the workpiece. For this reason, a neutralizer has been conventionally provided f or irradiating the surface of a workpiece with electrons to maintain the surface of the workpiece in an electrically neutral state.
The neutralizer is operated to fill a processing chamber which contains a workpiece with electrons prior to the processing on the workpiece such that the neutralization on the surface of the workpiece can be started simultaneously with the irradiation of an ion beam to the workpiece.
Conventionally, an ion generator typically produces a plasma to generate ions when the ion source is 2 started, while the neutralizer produces electrons within the processing chamber. It is therefore required to provide a shielding f eature f or preventing the electrons f rom f lowing into the ion generator from the processing chamber. Such a shielding feature is implemented by initially activating a deceleration power supply in an ion source to apply a deceleration electrode with a negative voltage, and subsequently activating an acceleration power supply to apply an acceleration electrode with a positive voltage.
However, when an ion source operating method as mentioned above is applied to the ion beam processing apparatus, particles possibly attached on the electrodes of the ion source to form short-circuiting between the acceleration electrode and the deceleration electrode would cause repeated breakdowns of the deceleration power supply which has been first activated.
The breakdown of the ion source power supply mainly results from the short-circuiting between the electrodes of the ion source due to particles attached thereon. Such particles are in most cases electrically conductive materials which are sputter deposits once attached on and coming off of a wall surface within the processing chamber. When the acceleration electrode and the deceleration electrode of the ion source are applied with respective voltages with such particles attached on portions of these electrodes, the two electrodes are short-circuited to cause a sequence of repeated operations involving a short-circuit current flowing into the ion source power supply, the ion 3 source power supply being shut down in response to a detected excessive current, and the voltage applied again after a predetermined time period. This sequence of operations will be repeated until the particles causing the shorts circuiting are burnt away or removed from the electrodes by the short-circuiting current.
Typically, in the ion source power supplies, the acceleration power supply is designed to have a larger current capacity than the deceleration power supply. For example, an ion source power supplies may be a combination of an acceleration power supply having a maximum output of 1. 3 kv, 3 A and a deceleration power supply having a maximum output of 500 v, 0.2 A. This is because the acceleration and deceleration power supplies need not have the same capacity in view of the optimization for the configuration of the entire ion source power supplies. More specifically, the acceleration power supply is required to supply an ion beam current when an ion beam is extracted, whereas the deceleration power supply hardly has to supply a current for the ion beam.
In addition, values for detecting excessive currents of the respective power supplies are typically set in proportion to the rated maximum current values of the respective power supplies, so that the excessive current detection functions at a lower excessive current for a power supply having a smaller current capacity. Thus, if particles are attached on portions of the electrodes of the ion source, a short-circuiting current flows through 1 1 C - 4 - particles when a deceleration voltage is applied, and activates the excessive current detection in the deceleration power supply to once shut down the deceleration power supply. Then, in a predetermined time period, the deceleration voltage is again applied. This sequence of operations is repeated to keep the acceleration power supply from activating indefinitely.
Further, with particles of small size, a short-circuiting current flowing through such particles results in burning off and consequently removing the particles from the electrodes. However, if particles have a certain large size, a short- circuiting current flowing in the deceleration power supply having a small capacity is not enough to burn off the particles which are therefore left on the electrodes, thus forcing the ion source to repeat a sequence of operations involving excessive current detection, trip (breakdown) and re- activation.
For the user of these apparatus, it is important to operate the apparatus in a stable state for a long period, minimize maintenance operations such as cleaning for the apparatus, and increase an apparatus available time resulting from the minimized maintenance operations. For achieving these objects, it is critical to minimize the frequency of the occurrence of breakdown, activate the apparatus in a stable state as early as possible, and maintain the stable operating state.
Generally, the breakdown frequently occurs in the ion source due to particles attached on the electrodes of the ion source upon powering on the apparatus af ter cleaning the inside of the apparatus or after cleaning the electrodes of the ion source. A conventional method of operating the ion source, however, suffers from difficulties in removing particles, contributing to the breakdown, from the electrodes of the ion source, and consequent occurrence of repeated breakdowns. To reach a stable operating state substantially free from the breakdown, a long time is required. In some cases, the electrodes of the ion source must be frequently cleaned in order to improve such situations, thus experiencing difficulties in improving the apparatus available time- In view of the problems inherent to the prior art as mentioned above, preferably the present invention provides an ion beam processing apparatus and a method of operating an ion source therefor which are capable of reducing the frequency of the occurrence of breakdown to smoothly activate the ion source, as well as accomplishing reduced requirements for maintenance such as cleaning for the electrodes of the ion source and so on, a higher reliability of the apparatus, and an improved operating efficiency of the apparatus.
According to an aspect of the present invention, an J on source is mounted to a processing chamber to form a vacuum chamber into which a gas is introduced to produce a plasma, and an electric field is applied within the vacuum chamber to
6 extract ions within the plasma as an ion beam. The ion source comprises an arc power supply, an acceleration power supply for applying an acceleration electrode with a positive potential to extract an ion beam, and a deceleration power supply for applying a deceleration electrode with a negative potential to prevent ions from flowing into the ion source. When the ion source is operated, the acceleration electrode is first applied with a positive potential, and the deceleration electrode is applied with a negative potential after or simultaneously with the application of the acceleration electrode with the positive potential.
BRIEF DESCRIPTION OF THE DRAWINGS
Fig. 1 is a schematic diagram illustrating the configuration of an ion beam processing apparatus according to the present invention; Fig. 2 is a time chart illustrating an operational procedure according to the present invention; Fig. 3 is a f low diagram illustrating various steps involved in the operational procedure according to the present invention.
DETAILED DESCRIPT7ON OF E2MBODIMENTS OF THE INVENT ON Fig. 1 is a schematic diagram illustrating the configuration of an ion beam processing apparatus according to an embodiment of the present invention. 25 Referring specifically to Fig. 1, an ion source, generally designated by reference numeral 1, comprises an acceleration electrode 2 which is applied with a positive potential; a deceleration electrode 3 which is applied with a negative potential; an ion source chamber 4; and a filament 5 for emitting thermoelectrons. The illustrated ion beam processing apparatus further comprises a filament power supply 6 for heating the filament 5; an arc power supply 7 for producing a plasma within the ion source chamber 4; an acceleration power supply 8 for applying the acceleration electrode 2 with an acceleration voltage for extracting an ion beam; a deceleration power supply 9 for applying the deceleration electrode 3 with a deceleration voltage for preventing electrons flowing into the ion source chamber 4 from a processing chamber 11; a controller 10 for operating the respective power supplies 6, 7, 8, 9; and the processing chamber 11.
The processing chamber 11 contains a holder 13 for carrying workpieces 12; a neutralizer 14 for generating electrons; and a shutter 15 for preventing an ion beam from being irradiating to the workpieces 12. The processing chamber 11 is externally provided with a power supply 16 for the neutralizer 14 and a shutter driver 17. The power supply 16 and the shutter driver 17 are controlled by the controller 10.
The ion source 1 is mounted to the processing chamber 11 and used in the form of a vacuum chamber. The controller 10 controls voltages applied to, currents generated in, and operating timings for the filament power supply 6, the arc power supply 7, the acceleration power supply 8, the deceleration power supply 9, the neutralizer power supply 16, and the shutter driver 17.
A conventional operational procedure involves introducing a plasma generating gas into the ion source 1; conducting the filament 5 after a predetermined pressure is reached within the ion source 1, and activating the deceleration power supply 9 to apply the deceleration electrode 3 with a deceleration voltage. Subsequently, the operational procedure proceeds to the activation of the acceleration power supply 8 to apply the acceleration electrode 2 with an acceleration voltage, and final application of an arc voltage from the arc power supply 7 to produce a plasma from which an ion beam is extracted. As previously described, with this operational procedure or method, when the deceleration electrode 3 is applied with the deceleration voltage with particles attached on portions of the acceleration electrode 2 and the deceleration electrode 3 of the ion source, a short circuit ing state is formed between the acceleration electrode 2 and the deceleration electrode 3 to cause a short-circuiting current to flow into the deceleration power supply 9, which is detected as an excessive current to shut down the deceleration power supply 9. Then, after the lapse of a predetermined time, the deceleration power supply 9 is again powered up to apply the deceleration electrode 3 with the deceleration voltage. This sequence of operations is repeated.
Fig. 2 is a diagram for explaining an operational 9 procedure for an ion source according to the present invention.
As indicated by arrows, this operational procedure involves introducing a plasma generating gas into the ion source 1; conducting the filament 5 after a predetermined pressure is reached in the ion source 1; next activating the acceleration power supply 8 to apply the acceleration electrode 2 with an acceleration voltage; subsequently activating the deceleration power supply 9 to apply the deceleration electrode 3 with a deceleration voltage; and finally applying an_ arc voltage from the arc power supply 7 to extract an ion beam.
The foregoing is basic principles and operations of the present invention described with reference to the time chart illustrated in Fig. 2. In the following, a preferred operational procedure of the present invention will generally be described with reference to a flow chart illustrated in Fig. 3.
Fig. 3 is a flow chart illustrating the operation of the controller 10 according to the present invention.
Referring specifically to Fig. 3, as the controller 10 starts operating, first at step 3 0, the shutter driver 17 is operated to close the shutter 15 to protect the workpieces 12 from being irradiated with ions or electrons from the ion source.
Next, at step 31, a plasma generating gas is introduced into an ion source 4, and then. the filament power supply 6 is operated to conduct the filament 5, and the arc power supply 7 is forced to supply an arc voltage. Then, at step 32, the - acceleration power supply 8 is operated to supply the acceleration electrode 2 with an acceleration voltage. Next, at step 33, the deceleration power supply 9 is operated to supply the deceleration electrode 3 with a deceleration voltage. Further, at step 34, the neutralizer power supply 16 is operated to conduct the neutralizer 14 to produce electrons for neutralizing the surface of the workpiece 12.
With a sequence of the foregoing operations, the ion source is now ready for activation. Subsequently, at step 35, the shutter driver 17 is operated to open the shutter 15, followed by proceeding to step 36, where the workpieces 12 are processed.
According to the foregoing operational procedure, with particles attached on portions of the acceleration electrode 2 and the deceleration electrode 3, the acceleration power supply 8 having a larger power supply capacity first applies an acceleration voltage to form a short-circuiting state between the acceleration electrode 2 and the deceleration electrode 3 through the particles to cause a short-circuiting current to flow from the acceleration power supply 8. The short-circuiting current continues to flow through the particles on the electrodes 2, 3 until the acceleration power supply 8 stops outputting the acceleration voltage in response to the detection of an excessive current. Since the acceleration power supply 8 has a rated maximum current value as high as several amperes, the acceleration power supply 8 will not trip until the short-circuiting current reaches an excessive current set value slightly higher than the rated maximum current value, for example, 120 % of the rated maximum current value.
In this way, according to the method of operating the ion source of this embodiment, since the acceleration power supply 8 has a larger power supply capacity, a larger short- circuiting current can be generated, and accordingly a time period until an excessive current is detected can be made longer than the conventional method of operating an ion source. Thus, the particles, causing the short- circuiting between the electrodes 2, 3, can be applied with a larger short- circuiting current for a longer time than the conventional operating method. Heat generated by the conducted short-circuiting current causes the particles to heat and burn away, or the particles are removed from the electrodes by electric shock such as discharge or evaporated due to the vacuum environment, thus efficiently eliminating the short-circuiting state between the electrodes 2, 3.
Further, according to this embodiment, since a larger short-circuiting current can be applied for a longer time by the acceleration power supply 8 having a large power supply capacity, it is possible to remove particles in a shorter time if the particles have the same size as well as to remove particles having a large size which cannot be removed in the prior art due to an insuf f icient current. As a result, even if the breakdown occurred, it could be solved in a shorter time. It is also possible to reduce the frequency of maintenance operations such as cleaning for the electrodes of the ion source in order to fix the breakdown.
12 - In the foregoing embodiment, after the acceleration power supply 8 is activated to apply the acceleration electrode 2 with an acceleration voltage, the deceleration power supply 9 is activated to apply the 5 deceleration electrode 3 with a deceleration voltage. Alternatively, the acceleration power supply 8 and the deceleration power supply 9 may be simultaneously activated to apply the acceleration electrode 2 and the deceleration electrode 3 with an acceleration voltage and a deceleration voltage, respectively. In this case, since the sum of the voltages generated by the acceleration power supply 8 and the deceleration power supply 9 is applied across the acceleration electrode 2 and the deceleration electrode 3, a larger short-circuiting current can be generated, thereby making it possible to remove particles in a shorter time.
According to the present invention, since the voltages of the ion source power supplies are applied in such an order that the deceleration voltage is applied after or simultaneously with the application of the acceleration voltage, it is possible to reduce the frequency of the occurrence of breakdown in the ion source, which is problematic in an ion beam processing apparatus or the like, particularly, the breakdown that occurs due to particles attached on the electrodes inherent in the ion source, to smoothly activate the ion source, and to realize a stable operation of the apparatus such as reduced requirements for maintenance operations such as cleaning f or the electrodes of the ion source or the like, a higher reliability of the 1 . n 1 - 13 - apparatus, an improved operating efficiency of the apparatus, and so on.
- 14

Claims (7)

  1. CLAIMS: 1. A method of operating an ion source for an ion beam processing
    apparatus, said ion source including an arc power supply, an acceleration power supply for applying an acceleration electrode with a positive voltage to extract an ion beam, and a deceleration power supply for applying a deceleration electrode with a negative voltage for preventing electrons from flowing into said ion source, wherein a gas is introduced into said ion source to produce a plasma from said gas, and an electric field is formed to extract ions within said plasma as an ion beam, said method comprising the steps of: applying said acceleration electrode with a positive voltage by said acceleration power supply; and subsequently applying said deceleration electrode with a negative voltage by said deceleration power supply.
  2. 2. A method of operating an ion source for an ion beam processing apparatus, said ion source including an arc power supply, an acceleration power supply for applying an acceleration electrode with a positive voltage to extract an ion beam, and a deceleration power supply for applying a deceleration electrode with a negative voltage for preventing electrons from flowing into said ion source, wherein a gas is introduced into said ion source to produce a plasma from said gas, and an electric field is formed to extract ions within said plasma as an ion beam, said method comprising the step of:
    applying said deceleration electrode with a negative voltage by said deceleration power supply simultaneously with application of said acceleration electrode with a positive voltage by said acceleration power supply.
  3. 3. A method of operating an ion source f o r an ion beam processing apparatus, said ion source including an arc power supply, an acceleration power supply for applying an acceleration electrode with a positive voltage to extract an ion beam, and a deceleration power supply for applying a deceleration electrode (with a negative voltage for preventing electrons from flowing into said ion source, wherein a gas is introduced into said ion source to Produce a plasma from said gas, and an electric field is formed to extract ions within said plasma as an ion beam, said method comprising:
    a first step of applying said deceleration electrode with a negative voltage by said deceleration power supply after applying said acceleration electrode with a positive voltage by said acceleration power supply; and a second step of applying said deceleration electrode with a negative voltage by said deceleration power supply simultaneously with application of said acceleration electrode with a positive voltage by said acceleration power supply, said. method selectively executing one of said first step and said second step.
  4. 4. A method of operating an ion beam processing 16 - apparatus, said ion beam processing apparatus has an ion source and a processing chamber, said ion source including an arc power supply, an acceleration power supply for applying an acceleration electrode with a positive voltage to extract an ion beam, and a deceleration power supply for applying a deceleration electrode with a negative voltage for preventing electrons from flowing into said ion source, wherein a gas is introduced into said ion source to produce a plasma from said gas, and an electric field is formed to extract ions within said plasma as an ion beam, said processing chamber comprising a holder for holding a workpiece, a shutter for protecting said workpiece from being irradiated with ions and electrons, and a neutralizer for generating electrons for electrically neutralizing the surface of said workpiece, said method comprising: a first step of applying said acceleration electrode with a positive voltage by said acceleration power supply; a second step of applying said deceleration electrode with a negative voltage by said deceleration power supply after executing said first step; and a third step of starting said neutralizer after executing said second step.
  5. 5. A method of operating an ion beam processing apparatus according to claim 4, further comprising the step of: inserting said shutter to protect said workpiece 17 - from being irradiated with ions before executing said first step.
  6. 6. A method of operating an ion beam processing apparatus according to claim 5, further comprising the step of: removing said shutter after executing said third step.
  7. 7. A method of operating an ion beam processing apparatus according to claim 4, further comprising the step of: processing said workpiece after executing said third step.
    A method of operating an ion source substantially as any one embodiment herein described with reference to the accompanying drawings.
GB9929564A 1998-12-15 1999-12-14 Ion beam processing apparatus and method of operating ion source therefor Withdrawn GB2344931A (en)

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Application Number Priority Date Filing Date Title
JP35660698 1998-12-15

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GB2344931A true GB2344931A (en) 2000-06-21

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KR (1) KR20000048121A (en)
DE (1) DE19960314A1 (en)
GB (1) GB2344931A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007013703A1 (en) * 2005-07-26 2007-02-01 Psm Inc. Injection type plasma treatment apparatus and method

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6515426B1 (en) * 1998-12-15 2003-02-04 Hitachi, Ltd. Ion beam processing apparatus and method of operating ion source therefor
KR101385750B1 (en) * 2007-11-30 2014-04-18 삼성전자주식회사 Substrate processing apparatus using neutralized beam and method thereof
JP5390330B2 (en) * 2008-10-16 2014-01-15 キヤノンアネルバ株式会社 Substrate processing apparatus and cleaning method thereof
US8604418B2 (en) * 2010-04-06 2013-12-10 Axcelis Technologies, Inc. In-vacuum beam defining aperture cleaning for particle reduction
JP6059335B2 (en) * 2013-03-08 2017-01-11 キヤノンアネルバ株式会社 Ion beam processing method and ion beam processing apparatus
US9406535B2 (en) * 2014-08-29 2016-08-02 Lam Research Corporation Ion injector and lens system for ion beam milling
US10825652B2 (en) 2014-08-29 2020-11-03 Lam Research Corporation Ion beam etch without need for wafer tilt or rotation
CN105097398A (en) * 2015-08-26 2015-11-25 成都森蓝光学仪器有限公司 Water cooling manner adopting annular hot cathode ion source neutralizer
US9779955B2 (en) 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1063199A (en) * 1964-10-14 1967-03-30 Commissariat Energie Atomique A source of positively-charged particles
EP0101867A2 (en) * 1982-07-30 1984-03-07 Hitachi, Ltd. Plasma ion source
US4870284A (en) * 1987-11-17 1989-09-26 Hitachi, Ltd. Ion source and method of drawing out ion beam
US4916311A (en) * 1987-03-12 1990-04-10 Mitsubishi Denki Kabushiki Kaisha Ion beaming irradiating apparatus including ion neutralizer
EP0525927A1 (en) * 1991-07-23 1993-02-03 Nissin Electric Company, Limited Ion source having a mass separation device
GB2295485A (en) * 1994-11-19 1996-05-29 Atomic Energy Authority Uk Ion beam extraction and acceleration

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4714834A (en) * 1984-05-09 1987-12-22 Atomic Energy Of Canada, Limited Method and apparatus for generating ion beams
FR2581244B1 (en) * 1985-04-29 1987-07-10 Centre Nat Rech Scient TRIODE TYPE ION SOURCE WITH SINGLE HIGH FREQUENCY EXCITATION MAGNETIC CONTAINMENT OF MULTIPOLAR TYPE MAGNETIC IONIZATION
JP2625946B2 (en) 1988-08-22 1997-07-02 日新電機株式会社 Control method of ion processing device
GB9522883D0 (en) 1995-11-08 1996-01-10 Applied Materials Inc An ion implanter and method of ion implantation
US6515426B1 (en) * 1998-12-15 2003-02-04 Hitachi, Ltd. Ion beam processing apparatus and method of operating ion source therefor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1063199A (en) * 1964-10-14 1967-03-30 Commissariat Energie Atomique A source of positively-charged particles
EP0101867A2 (en) * 1982-07-30 1984-03-07 Hitachi, Ltd. Plasma ion source
US4916311A (en) * 1987-03-12 1990-04-10 Mitsubishi Denki Kabushiki Kaisha Ion beaming irradiating apparatus including ion neutralizer
US4870284A (en) * 1987-11-17 1989-09-26 Hitachi, Ltd. Ion source and method of drawing out ion beam
EP0525927A1 (en) * 1991-07-23 1993-02-03 Nissin Electric Company, Limited Ion source having a mass separation device
GB2295485A (en) * 1994-11-19 1996-05-29 Atomic Energy Authority Uk Ion beam extraction and acceleration

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007013703A1 (en) * 2005-07-26 2007-02-01 Psm Inc. Injection type plasma treatment apparatus and method
CN101228288B (en) * 2005-07-26 2011-12-28 Psm有限公司 Injection type plasma processing apparatus and method thereof

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GB9929564D0 (en) 2000-02-09
US6515426B1 (en) 2003-02-04
US20030030009A1 (en) 2003-02-13
US6635998B2 (en) 2003-10-21
KR20000048121A (en) 2000-07-25
DE19960314A1 (en) 2000-06-29

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