GB2340600A - Photodetector circuit - Google Patents

Photodetector circuit

Info

Publication number
GB2340600A
GB2340600A GB9926002A GB9926002A GB2340600A GB 2340600 A GB2340600 A GB 2340600A GB 9926002 A GB9926002 A GB 9926002A GB 9926002 A GB9926002 A GB 9926002A GB 2340600 A GB2340600 A GB 2340600A
Authority
GB
United Kingdom
Prior art keywords
photodetector circuit
mosfet
photocurrent
ensures
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB9926002A
Other versions
GB9926002D0 (en
GB2340600B (en
Inventor
Gillian Marshall
Stephen Collins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Publication of GB9926002D0 publication Critical patent/GB9926002D0/en
Publication of GB2340600A publication Critical patent/GB2340600A/en
Application granted granted Critical
Publication of GB2340600B publication Critical patent/GB2340600B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H04N25/573—Control of the dynamic range involving a non-linear response the logarithmic type

Abstract

A photodetector circuit (100) fabricated in BiCMOS exhibits improved temperature stability. A bipolar phototransistor (200) generates a photocurrent (<I>I<SB>bi</SB></I>) in response to illumination. This photocurrent (<I>I<SB>bi</SB></I>) is passed through a diode connected load MOSFET (114) operating subthreshold which gives a logarithmic voltage output. This ensures a large dynamic range of the photon detection system. The phototransistor (200) has gain ( b ) which amplifies an initial current response and ensures that current I<I><SB>bi</SB></I>) through the load MOSFET (114) is significantly higher than MOSFET leakage current. This improves performance at high temperatures when the leakage current is large, whilst maintaining photodetector sensitivity to low illumination levels. The photodetector circuit (100) is particularly suitable for incorporation in a detector array (315) for use in a digital camera.
GB9926002A 1997-06-16 1998-06-15 Photodetector circuit Expired - Fee Related GB2340600B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9712368A GB2326784A (en) 1997-06-16 1997-06-16 A temperature-insensitive imaging array of phototransistors and subthreshold MOS loads
PCT/GB1998/001734 WO1998058411A1 (en) 1997-06-16 1998-06-15 Photodetector circuit

Publications (3)

Publication Number Publication Date
GB9926002D0 GB9926002D0 (en) 2000-01-12
GB2340600A true GB2340600A (en) 2000-02-23
GB2340600B GB2340600B (en) 2001-09-19

Family

ID=10814133

Family Applications (2)

Application Number Title Priority Date Filing Date
GB9712368A Withdrawn GB2326784A (en) 1997-06-16 1997-06-16 A temperature-insensitive imaging array of phototransistors and subthreshold MOS loads
GB9926002A Expired - Fee Related GB2340600B (en) 1997-06-16 1998-06-15 Photodetector circuit

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB9712368A Withdrawn GB2326784A (en) 1997-06-16 1997-06-16 A temperature-insensitive imaging array of phototransistors and subthreshold MOS loads

Country Status (6)

Country Link
EP (1) EP1012883A1 (en)
JP (1) JP2002508119A (en)
KR (1) KR20010013810A (en)
CA (1) CA2290965A1 (en)
GB (2) GB2326784A (en)
WO (1) WO1998058411A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19946983C1 (en) * 1999-09-30 2001-04-19 Infineon Technologies Ag Arrangement with image sensors
US6879076B2 (en) * 2002-12-09 2005-04-12 Johnny D. Long Ellipsoid generator
JP2006029832A (en) * 2004-07-12 2006-02-02 Sanyo Electric Co Ltd Luminous energy detecting circuit
KR100844848B1 (en) 2007-05-14 2008-07-08 엘지전자 주식회사 Apparatus and method for cancelling color rolling in camera
CN101943973A (en) * 2009-07-03 2011-01-12 北京汇冠新技术股份有限公司 Interactive display
EP2795894B1 (en) * 2011-12-19 2020-06-17 Universität Zürich Photoarray, particularly for combining sampled brightness sensing with asynchronous detection of time-dependent image data
JP2015159133A (en) * 2012-06-14 2015-09-03 シャープ株式会社 Light receiving device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4078243A (en) * 1975-12-12 1978-03-07 International Business Machines Corporation Phototransistor array having uniform current response and method of manufacture
US5155353A (en) * 1991-08-14 1992-10-13 Tandberg Data High dynamic range integrated opto-electronic sensor and MOSFET amplifiers for pulsed light
US5276407A (en) * 1991-02-19 1994-01-04 Synaptics, Incorporated Sense amplifier
US5289023A (en) * 1991-02-19 1994-02-22 Synaptics, Incorporated High-density photosensor and contactless imaging array having wide dynamic range
US5363000A (en) * 1992-02-05 1994-11-08 Minolta Co., Ltd. Solid-state image sensing apparatus
WO1997021304A1 (en) * 1995-12-01 1997-06-12 The Secretary Of State For Defence Imaging system
EP0828297A2 (en) * 1996-09-10 1998-03-11 Honda Giken Kogyo Kabushiki Kaisha Photosensor circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5097305A (en) * 1991-02-19 1992-03-17 Synaptics Corporation Integrating photosensor and imaging system having wide dynamic range

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4078243A (en) * 1975-12-12 1978-03-07 International Business Machines Corporation Phototransistor array having uniform current response and method of manufacture
US5276407A (en) * 1991-02-19 1994-01-04 Synaptics, Incorporated Sense amplifier
US5289023A (en) * 1991-02-19 1994-02-22 Synaptics, Incorporated High-density photosensor and contactless imaging array having wide dynamic range
US5155353A (en) * 1991-08-14 1992-10-13 Tandberg Data High dynamic range integrated opto-electronic sensor and MOSFET amplifiers for pulsed light
US5363000A (en) * 1992-02-05 1994-11-08 Minolta Co., Ltd. Solid-state image sensing apparatus
WO1997021304A1 (en) * 1995-12-01 1997-06-12 The Secretary Of State For Defence Imaging system
EP0828297A2 (en) * 1996-09-10 1998-03-11 Honda Giken Kogyo Kabushiki Kaisha Photosensor circuit

Also Published As

Publication number Publication date
GB2326784A (en) 1998-12-30
KR20010013810A (en) 2001-02-26
GB9926002D0 (en) 2000-01-12
GB2340600B (en) 2001-09-19
CA2290965A1 (en) 1998-12-23
EP1012883A1 (en) 2000-06-28
GB9712368D0 (en) 1997-08-13
WO1998058411A1 (en) 1998-12-23
JP2002508119A (en) 2002-03-12

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20060615