GB2308234B - A novel via hole profile and method fabrication - Google Patents

A novel via hole profile and method fabrication

Info

Publication number
GB2308234B
GB2308234B GB9706661A GB9706661A GB2308234B GB 2308234 B GB2308234 B GB 2308234B GB 9706661 A GB9706661 A GB 9706661A GB 9706661 A GB9706661 A GB 9706661A GB 2308234 B GB2308234 B GB 2308234B
Authority
GB
United Kingdom
Prior art keywords
via hole
hole profile
method fabrication
novel via
novel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9706661A
Other versions
GB2308234A (en
GB9706661D0 (en
Inventor
Alan M Myers
Peter K Charvat
Thomas Letson
Shi-Ning Yang
Peng Bai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of GB9706661D0 publication Critical patent/GB9706661D0/en
Publication of GB2308234A publication Critical patent/GB2308234A/en
Application granted granted Critical
Publication of GB2308234B publication Critical patent/GB2308234B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/915—Active solid-state devices, e.g. transistors, solid-state diodes with titanium nitride portion or region
GB9706661A 1994-10-17 1995-07-14 A novel via hole profile and method fabrication Expired - Fee Related GB2308234B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/324,763 US5470790A (en) 1994-10-17 1994-10-17 Via hole profile and method of fabrication
PCT/US1995/009529 WO1996012295A1 (en) 1994-10-17 1995-07-14 A novel via hole profile and method of fabrication

Publications (3)

Publication Number Publication Date
GB9706661D0 GB9706661D0 (en) 1997-05-21
GB2308234A GB2308234A (en) 1997-06-18
GB2308234B true GB2308234B (en) 1999-04-14

Family

ID=23264999

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9706661A Expired - Fee Related GB2308234B (en) 1994-10-17 1995-07-14 A novel via hole profile and method fabrication

Country Status (8)

Country Link
US (3) US5470790A (en)
JP (1) JPH10507315A (en)
KR (1) KR100274138B1 (en)
CN (1) CN1106688C (en)
AU (1) AU3152195A (en)
GB (1) GB2308234B (en)
TW (1) TW289152B (en)
WO (1) WO1996012295A1 (en)

Families Citing this family (105)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2921773B2 (en) * 1991-04-05 1999-07-19 三菱電機株式会社 Wiring connection structure of semiconductor device and method of manufacturing the same
KR0138308B1 (en) 1994-12-14 1998-06-01 김광호 Method of fabricating interlayer connection in semiconductor device
KR100193100B1 (en) * 1995-02-02 1999-06-15 모리시다 요이치 Semiconductor device and manufacturing method
JP2953340B2 (en) * 1995-03-29 1999-09-27 ヤマハ株式会社 Wiring formation method
US5897374A (en) * 1995-05-22 1999-04-27 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical via/contact with undercut dielectric
US5726498A (en) * 1995-05-26 1998-03-10 International Business Machines Corporation Wire shape conferring reduced crosstalk and formation methods
JP2899540B2 (en) * 1995-06-12 1999-06-02 日東電工株式会社 Film carrier and semiconductor device using the same
TW298674B (en) * 1995-07-07 1997-02-21 At & T Corp
TW318261B (en) * 1995-09-21 1997-10-21 Handotai Energy Kenkyusho Kk
EP0852809A4 (en) * 1995-09-29 1999-09-15 Intel Corp Metal stack for integrated circuit having two thin layers of titanium with dedicated chamber depositions
US5747879A (en) * 1995-09-29 1998-05-05 Intel Corporation Interface between titanium and aluminum-alloy in metal stack for integrated circuit
US5851928A (en) * 1995-11-27 1998-12-22 Motorola, Inc. Method of etching a semiconductor substrate
US5851923A (en) * 1996-01-18 1998-12-22 Micron Technology, Inc. Integrated circuit and method for forming and integrated circuit
US6040613A (en) * 1996-01-19 2000-03-21 Micron Technology, Inc. Antireflective coating and wiring line stack
US5661083A (en) * 1996-01-30 1997-08-26 Integrated Device Technology, Inc. Method for via formation with reduced contact resistance
US5700718A (en) * 1996-02-05 1997-12-23 Micron Technology, Inc. Method for increased metal interconnect reliability in situ formation of titanium aluminide
JP4179483B2 (en) 1996-02-13 2008-11-12 株式会社半導体エネルギー研究所 Method for manufacturing display device
US6821821B2 (en) * 1996-04-18 2004-11-23 Tessera, Inc. Methods for manufacturing resistors using a sacrificial layer
US5912510A (en) * 1996-05-29 1999-06-15 Motorola, Inc. Bonding structure for an electronic device
US6222272B1 (en) 1996-08-06 2001-04-24 Nitto Denko Corporation Film carrier and semiconductor device using same
US6046100A (en) * 1996-12-12 2000-04-04 Applied Materials, Inc. Method of fabricating a fabricating plug and near-zero overlap interconnect line
US6028363A (en) * 1997-06-04 2000-02-22 Taiwan Semiconductor Manufacturing Company Vertical via/contact
US5877092A (en) * 1997-06-18 1999-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method for edge profile and design rules control
US6141870A (en) 1997-08-04 2000-11-07 Peter K. Trzyna Method for making electrical device
US5969425A (en) * 1997-09-05 1999-10-19 Advanced Micro Devices, Inc. Borderless vias with CVD barrier layer
US6522013B1 (en) * 1997-12-18 2003-02-18 Advanced Micro Devices, Inc. Punch-through via with conformal barrier liner
US5925932A (en) * 1997-12-18 1999-07-20 Advanced Micro Devices, Inc. Borderless vias
TW359884B (en) * 1998-01-07 1999-06-01 Nanya Technology Co Ltd Multi-level interconnects with I-plug and production process therefor
GB2347267B (en) * 1998-02-20 2001-05-02 Lg Lcd Inc A liquid crystal display
KR100276442B1 (en) 1998-02-20 2000-12-15 구본준 Liquid crystal display device and its fabrication method
US6576547B2 (en) 1998-03-05 2003-06-10 Micron Technology, Inc. Residue-free contact openings and methods for fabricating same
US6080664A (en) * 1998-05-29 2000-06-27 Vanguard International Semiconductor Corporation Method for fabricating a high aspect ratio stacked contact hole
US6433428B1 (en) 1998-05-29 2002-08-13 Kabushiki Kaisha Toshiba Semiconductor device with a dual damascene type via contact structure and method for the manufacture of same
US6084296A (en) * 1998-07-09 2000-07-04 Satcon Technology Corporation Low cost high power hermetic package with electrical feed-through bushings
KR100265772B1 (en) * 1998-07-22 2000-10-02 윤종용 Wiring structure of semicondcutor device and manufacturing method thereof
KR100267106B1 (en) * 1998-09-03 2000-10-02 윤종용 Method for fabricating multi-layer metal interconnection of semiconductor device
KR100295054B1 (en) * 1998-09-16 2001-08-07 윤종용 Semiconductor device having multi-wiring and manufacturing method thereof
JP3655113B2 (en) * 1998-12-28 2005-06-02 シャープ株式会社 Manufacturing method of semiconductor memory device
US6153901A (en) * 1999-01-26 2000-11-28 Lucent Technologies Inc. Integrated circuit capacitor including anchored plug
US6169010B1 (en) * 1999-01-26 2001-01-02 Lucent Technologies Inc. Method for making integrated circuit capacitor including anchored plug
DE19903195B4 (en) * 1999-01-27 2005-05-19 Infineon Technologies Ag Method for improving the quality of metal interconnects on semiconductor structures
US6087726A (en) * 1999-03-01 2000-07-11 Lsi Logic Corporation Metal interconnect stack for integrated circuit structure
US6265305B1 (en) * 1999-10-01 2001-07-24 United Microelectronics Corp. Method of preventing corrosion of a titanium layer in a semiconductor wafer
JP2001145241A (en) * 1999-11-15 2001-05-25 Sumitomo Wiring Syst Ltd Wiring board assembly
JP3502800B2 (en) 1999-12-15 2004-03-02 新光電気工業株式会社 Method for manufacturing semiconductor device
US6313026B1 (en) * 2000-04-10 2001-11-06 Micron Technology, Inc. Microelectronic contacts and methods for producing same
JP3547364B2 (en) * 2000-04-21 2004-07-28 シャープ株式会社 Method for manufacturing semiconductor device
US6392524B1 (en) 2000-06-09 2002-05-21 Xerox Corporation Photolithographically-patterned out-of-plane coil structures and method of making
US6396677B1 (en) * 2000-05-17 2002-05-28 Xerox Corporation Photolithographically-patterned variable capacitor structures and method of making
US6856225B1 (en) * 2000-05-17 2005-02-15 Xerox Corporation Photolithographically-patterned out-of-plane coil structures and method of making
WO2002017693A1 (en) * 2000-08-18 2002-02-28 Mitsubishi Denki Kabushiki Kaisha Installation substrate, method of mounting installation substrate, and bulb socket using installation substrate
KR100365642B1 (en) * 2000-10-30 2002-12-26 삼성전자 주식회사 Method for fabricating a semiconductor device with contact window
JP4752108B2 (en) * 2000-12-08 2011-08-17 ソニー株式会社 Semiconductor device and manufacturing method thereof
US6613664B2 (en) * 2000-12-28 2003-09-02 Infineon Technologies Ag Barbed vias for electrical and mechanical connection between conductive layers in semiconductor devices
US6441435B1 (en) * 2001-01-31 2002-08-27 Advanced Micro Devices, Inc. SOI device with wrap-around contact to underside of body, and method of making
US6595787B2 (en) * 2001-02-09 2003-07-22 Xerox Corporation Low cost integrated out-of-plane micro-device structures and method of making
KR100385227B1 (en) * 2001-02-12 2003-05-27 삼성전자주식회사 Semiconductor device having copper multy later circuit line and method of making the same
US20030219459A1 (en) * 2002-01-18 2003-11-27 Cytos Biotechnology Ag Prion protein carrier-conjugates
US20030194872A1 (en) * 2002-04-16 2003-10-16 Applied Materials, Inc. Copper interconnect with sidewall copper-copper contact between metal and via
JP3974470B2 (en) * 2002-07-22 2007-09-12 株式会社東芝 Semiconductor device
KR20040017037A (en) * 2002-08-20 2004-02-26 삼성전자주식회사 Semiconductor contact structure and method of forming the same
DE10257681B4 (en) 2002-12-10 2008-11-13 Infineon Technologies Ag A method of fabricating an integrated circuit device including a metal nitride layer and integrated circuit device
US6806579B2 (en) * 2003-02-11 2004-10-19 Infineon Technologies Ag Robust via structure and method
US6977437B2 (en) * 2003-03-11 2005-12-20 Texas Instruments Incorporated Method for forming a void free via
US20040192059A1 (en) * 2003-03-28 2004-09-30 Mosel Vitelic, Inc. Method for etching a titanium-containing layer prior to etching an aluminum layer in a metal stack
US7045455B2 (en) * 2003-10-23 2006-05-16 Chartered Semiconductor Manufacturing Ltd. Via electromigration improvement by changing the via bottom geometric profile
KR20050056419A (en) * 2003-12-10 2005-06-16 동부아남반도체 주식회사 Method for forming a metal line in semiconductor device
US7956672B2 (en) * 2004-03-30 2011-06-07 Ricoh Company, Ltd. Reference voltage generating circuit
US7217651B2 (en) * 2004-07-28 2007-05-15 Intel Corporation Interconnects with interlocks
KR100668833B1 (en) * 2004-12-17 2007-01-16 주식회사 하이닉스반도체 Emthod for fabricating capacitor in semiconductor device
US7332428B2 (en) * 2005-02-28 2008-02-19 Infineon Technologies Ag Metal interconnect structure and method
US20060244151A1 (en) * 2005-05-02 2006-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Oblique recess for interconnecting conductors in a semiconductor device
DE102005024914A1 (en) * 2005-05-31 2006-12-07 Advanced Micro Devices, Inc., Sunnyvale Method for forming electrically conductive lines in an integrated circuit
WO2007020805A1 (en) * 2005-08-12 2007-02-22 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US7511349B2 (en) * 2005-08-19 2009-03-31 Taiwan Semiconductor Manufacturing Company, Ltd. Contact or via hole structure with enlarged bottom critical dimension
US7517736B2 (en) * 2006-02-15 2009-04-14 International Business Machines Corporation Structure and method of chemically formed anchored metallic vias
US7528066B2 (en) * 2006-03-01 2009-05-05 International Business Machines Corporation Structure and method for metal integration
JP4788474B2 (en) * 2006-05-19 2011-10-05 三菱電機株式会社 Semiconductor device
DE102006035645B4 (en) * 2006-07-31 2012-03-08 Advanced Micro Devices, Inc. Method for forming an electrically conductive line in an integrated circuit
KR100790452B1 (en) * 2006-12-28 2008-01-03 주식회사 하이닉스반도체 Method for forming multi layer metal wiring of semiconductor device using damascene process
DE102007004860B4 (en) * 2007-01-31 2008-11-06 Advanced Micro Devices, Inc., Sunnyvale A method of making a copper-based metallization layer having a conductive overcoat by an improved integration scheme
US7790599B2 (en) * 2007-04-13 2010-09-07 International Business Machines Corporation Metal cap for interconnect structures
DE102007020263B4 (en) * 2007-04-30 2013-12-12 Infineon Technologies Ag Verkrallungsstruktur
US9076821B2 (en) 2007-04-30 2015-07-07 Infineon Technologies Ag Anchoring structure and intermeshing structure
US7709966B2 (en) * 2007-09-25 2010-05-04 Sixis, Inc. Large substrate structural vias
CN102576764A (en) * 2009-10-15 2012-07-11 Lg伊诺特有限公司 Solar photovoltaic device and a production method for the same
US9793199B2 (en) * 2009-12-18 2017-10-17 Ati Technologies Ulc Circuit board with via trace connection and method of making the same
US8314026B2 (en) 2011-02-17 2012-11-20 Freescale Semiconductor, Inc. Anchored conductive via and method for forming
JP5360134B2 (en) * 2011-06-01 2013-12-04 三菱電機株式会社 Semiconductor device and manufacturing method thereof
JP2013187339A (en) * 2012-03-07 2013-09-19 Toshiba Corp Semiconductor device and manufacturing method of the same
US8772949B2 (en) 2012-11-07 2014-07-08 International Business Machines Corporation Enhanced capture pads for through semiconductor vias
US9230934B2 (en) 2013-03-15 2016-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Surface treatment in electroless process for adhesion enhancement
US9832887B2 (en) * 2013-08-07 2017-11-28 Invensas Corporation Micro mechanical anchor for 3D architecture
US9299656B2 (en) 2014-06-02 2016-03-29 Infineon Technologies Ag Vias and methods of formation thereof
KR102307633B1 (en) 2014-12-10 2021-10-06 삼성전자주식회사 Semiconductor device and method for manufacturing the same
WO2017205781A1 (en) * 2016-05-27 2017-11-30 Board Of Trustees Of Michigan State University Hybrid diamond-polymer thin film sensors and fabrication method
US10163692B2 (en) * 2017-03-08 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of interconnection structure of semiconductor device structure
US10475702B2 (en) 2018-03-14 2019-11-12 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive feature formation and structure using bottom-up filling deposition
US11121025B2 (en) 2018-09-27 2021-09-14 Taiwan Semiconductor Manufacturing Company, Ltd. Layer for side wall passivation
US11177169B2 (en) 2019-06-21 2021-11-16 International Business Machines Corporation Interconnects with gouged vias
CN110190030A (en) * 2019-06-24 2019-08-30 南京华瑞微集成电路有限公司 A kind of method and power device improving UIS by connecting hole
CN110739269B (en) * 2019-10-25 2020-11-20 武汉新芯集成电路制造有限公司 Semiconductor device and method of forming the same
US11183455B2 (en) * 2020-04-15 2021-11-23 International Business Machines Corporation Interconnects with enlarged contact area
US11551967B2 (en) * 2020-05-19 2023-01-10 Taiwan Semiconductor Manufacturing Company Limited Via structure and methods for forming the same
US20230187350A1 (en) * 2021-12-13 2023-06-15 International Business Machines Corporation Dual-metal ultra thick metal (utm) structure

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4507852A (en) * 1983-09-12 1985-04-02 Rockwell International Corporation Method for making a reliable ohmic contact between two layers of integrated circuit metallizations
US4714686A (en) * 1985-07-31 1987-12-22 Advanced Micro Devices, Inc. Method of forming contact plugs for planarized integrated circuits
JPS63133647A (en) * 1986-11-26 1988-06-06 Oki Electric Ind Co Ltd Manufacture of semiconductor device
US4879257A (en) * 1987-11-18 1989-11-07 Lsi Logic Corporation Planarization process
JPH02122546A (en) * 1988-10-31 1990-05-10 Nec Corp Manufacture of semiconductor device
US5106461A (en) * 1989-04-04 1992-04-21 Massachusetts Institute Of Technology High-density, multi-level interconnects, flex circuits, and tape for tab
US5312775A (en) * 1991-01-30 1994-05-17 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device having multilayer interconnection structure
US5408130A (en) * 1992-08-31 1995-04-18 Motorola, Inc. Interconnection structure for conductive layers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59228737A (en) * 1983-06-10 1984-12-22 Seiko Epson Corp Semiconductor device
JPH0529470A (en) * 1991-07-24 1993-02-05 Sony Corp Forming method of wiring

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4507852A (en) * 1983-09-12 1985-04-02 Rockwell International Corporation Method for making a reliable ohmic contact between two layers of integrated circuit metallizations
US4714686A (en) * 1985-07-31 1987-12-22 Advanced Micro Devices, Inc. Method of forming contact plugs for planarized integrated circuits
JPS63133647A (en) * 1986-11-26 1988-06-06 Oki Electric Ind Co Ltd Manufacture of semiconductor device
US4879257A (en) * 1987-11-18 1989-11-07 Lsi Logic Corporation Planarization process
JPH02122546A (en) * 1988-10-31 1990-05-10 Nec Corp Manufacture of semiconductor device
US5106461A (en) * 1989-04-04 1992-04-21 Massachusetts Institute Of Technology High-density, multi-level interconnects, flex circuits, and tape for tab
US5312775A (en) * 1991-01-30 1994-05-17 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device having multilayer interconnection structure
US5408130A (en) * 1992-08-31 1995-04-18 Motorola, Inc. Interconnection structure for conductive layers

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Gardner et al, IEDM 84, pp 114-117, 1984, "Layered and homogeneous films for interconnects" *
Gardner et al, IEEE Transactions on Electron Devices, Vol ED-34, No 3, pp 632-643, Mar 87. *
Hasegawa et al., Japan Society of Applied Physics, 52nd FallMeeting, extd abstracts, pg 718, Oct1991 *
IBM Tech. Disc. Bull., Vol38, No6, June 95, "Method of anchoring contact or via plugs". *

Also Published As

Publication number Publication date
US5874358A (en) 1999-02-23
TW289152B (en) 1996-10-21
KR970707573A (en) 1997-12-01
GB2308234A (en) 1997-06-18
AU3152195A (en) 1996-05-06
US5619071A (en) 1997-04-08
KR100274138B1 (en) 2000-12-15
US5470790A (en) 1995-11-28
CN1106688C (en) 2003-04-23
WO1996012295A1 (en) 1996-04-25
JPH10507315A (en) 1998-07-14
CN1168739A (en) 1997-12-24
GB9706661D0 (en) 1997-05-21

Similar Documents

Publication Publication Date Title
GB2308234B (en) A novel via hole profile and method fabrication
HK1015438A1 (en) Method of manufacturing a transverse fan
IL107865A0 (en) A building and a method for manufacturing microelectronic devices
IL108973A (en) Non-soiling cutlery and a method for its production
HU9503209D0 (en) Spinnerette and a method of manufacturing it.
GB2284007B (en) A glazing unit and a method for its manufacture
SG63712A1 (en) A resistor and its manufacturing method
EP0857355A4 (en) A glass/metal package and method for producing the same
EP0772208A3 (en) Oxide-superconducting coil and a method for manufacturing the same
EP0713292A3 (en) A feedback latch and method therefor
GB2315266B (en) Magnet and method for manufacturing a magnet
GB9404723D0 (en) A method of manufacturing a diffuser
GB2344083B (en) Hollow profile and a method for the production thereof
IL111033A0 (en) A form-part and a method for the production thereof
ZA968486B (en) Jack and method for manufacturing a jack
EP0875106A4 (en) A self-initialized coder and method thereof
EP0704287A3 (en) Method for manufacturing a damping panel and panel made therefrom
GB9312972D0 (en) Doors and a method of manufacturing same
GB2275366B (en) Semiconductor device and a manufacturing method therefor
GB2285490B (en) A bearing member and method for its production
EP0666164A3 (en) A part fabrication method.
GB2280467B (en) Doors and a method of manufacturing same
AU4729896A (en) A textile manufacturing apparatus and method
EP0736341A4 (en) H-steel manufacturing method
GB2294066B (en) Former and method for supporting a window

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20100714