GB2261986A - Gaseous radical producing apparatus - Google Patents

Gaseous radical producing apparatus

Info

Publication number
GB2261986A
GB2261986A GB9221198A GB9221198A GB2261986A GB 2261986 A GB2261986 A GB 2261986A GB 9221198 A GB9221198 A GB 9221198A GB 9221198 A GB9221198 A GB 9221198A GB 2261986 A GB2261986 A GB 2261986A
Authority
GB
United Kingdom
Prior art keywords
constriction
discharge region
gaseous
discharge
discharge tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB9221198A
Other versions
GB2261986B (en
GB9221198D0 (en
Inventor
Nigel Gordon Chew
Richard George Humphreys
Julian Simon Satchell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Publication of GB9221198D0 publication Critical patent/GB9221198D0/en
Publication of GB2261986A publication Critical patent/GB2261986A/en
Application granted granted Critical
Publication of GB2261986B publication Critical patent/GB2261986B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357Generation remote from the workpiece, e.g. down-stream
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00Ion beam tubes
    • H01J27/02Ion sources; Ion guns
    • H01J27/16Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H01J27/18Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08Ion sources; Ion guns
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Abstract

Gaseous radical apparatus is provided with a discharge tube having a discharge tube, a magnetic field sufficient for electron confinement within the discharge region, and a constriction downstream of the discharge region. Use of a constriction downstrem of the discharge region lengthens the residence time within the discharge region, and thus enhances the probability of production of gaseous radicals. A preferred embodiment of the invention has a magnetic field sufficient to induce the ECR condition and a constriction giving a ratio of gaseous pressure within the discharge region to gaseous pressure just downstream of the constriction of 5:1 or greater. Other preferred features of the invention include use of a metal yoke, a metal jacket around exposed parts of the apparatus, use of a discharge tube having a low recombination coefficient and use of industrial standard microwave frequencies.
GB9221198A 1990-04-25 1992-10-08 Gaseous radical producing apparatus Expired - Fee Related GB2261986B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB909009319A GB9009319D0 (en) 1990-04-25 1990-04-25 Gaseous radical source
PCT/GB1991/000556 WO1991016723A1 (en) 1990-04-25 1991-04-23 Gaseous radical producing apparatus

Publications (3)

Publication Number Publication Date
GB9221198D0 GB9221198D0 (en) 1993-01-06
GB2261986A true GB2261986A (en) 1993-06-02
GB2261986B GB2261986B (en) 1994-08-24

Family

ID=10674987

Family Applications (2)

Application Number Title Priority Date Filing Date
GB909009319A Pending GB9009319D0 (en) 1990-04-25 1990-04-25 Gaseous radical source
GB9221198A Expired - Fee Related GB2261986B (en) 1990-04-25 1992-10-08 Gaseous radical producing apparatus

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB909009319A Pending GB9009319D0 (en) 1990-04-25 1990-04-25 Gaseous radical source

Country Status (4)

Country Link
EP (1) EP0526491A1 (en)
JP (1) JPH05506328A (en)
GB (2) GB9009319D0 (en)
WO (1) WO1991016723A1 (en)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0127523A1 (en) * 1983-05-20 1984-12-05 Commissariat A L'energie Atomique Electron-cyclotron resonance ion source
EP0164715A2 (en) * 1984-06-11 1985-12-18 Nippon Telegraph And Telephone Corporation Microwave ion source
US4611121A (en) * 1983-04-19 1986-09-09 Nihon Shinku Gijutsu Kabushiki Kaisha Magnet apparatus
US4683838A (en) * 1984-06-29 1987-08-04 Hitachi, Ltd. Plasma treatment system
US4703180A (en) * 1984-10-30 1987-10-27 Hitachi, Ltd. Microwave discharge type ion source for ion injection devices
US4739169A (en) * 1985-10-04 1988-04-19 Hitachi, Ltd. Ion source
US4788473A (en) * 1986-06-20 1988-11-29 Fujitsu Limited Plasma generating device with stepped waveguide transition
DE3915477A1 (en) * 1988-05-11 1989-11-23 Hitachi Ltd MICROWAVE PLASMA MANUFACTURING DEVICE
EP0344969A1 (en) * 1988-06-03 1989-12-06 Eaton Corporation Electron cyclotron resonance ion source
JPH10225041A (en) * 1997-02-05 1998-08-21 Toshiba Corp Motor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01225041A (en) * 1988-03-03 1989-09-07 Mitsubishi Electric Corp Ion source device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4611121A (en) * 1983-04-19 1986-09-09 Nihon Shinku Gijutsu Kabushiki Kaisha Magnet apparatus
EP0127523A1 (en) * 1983-05-20 1984-12-05 Commissariat A L'energie Atomique Electron-cyclotron resonance ion source
EP0164715A2 (en) * 1984-06-11 1985-12-18 Nippon Telegraph And Telephone Corporation Microwave ion source
US4683838A (en) * 1984-06-29 1987-08-04 Hitachi, Ltd. Plasma treatment system
US4703180A (en) * 1984-10-30 1987-10-27 Hitachi, Ltd. Microwave discharge type ion source for ion injection devices
US4739169A (en) * 1985-10-04 1988-04-19 Hitachi, Ltd. Ion source
US4788473A (en) * 1986-06-20 1988-11-29 Fujitsu Limited Plasma generating device with stepped waveguide transition
DE3915477A1 (en) * 1988-05-11 1989-11-23 Hitachi Ltd MICROWAVE PLASMA MANUFACTURING DEVICE
EP0344969A1 (en) * 1988-06-03 1989-12-06 Eaton Corporation Electron cyclotron resonance ion source
JPH10225041A (en) * 1997-02-05 1998-08-21 Toshiba Corp Motor

Also Published As

Publication number Publication date
GB9009319D0 (en) 1990-06-20
JPH05506328A (en) 1993-09-16
GB2261986B (en) 1994-08-24
WO1991016723A1 (en) 1991-10-31
GB9221198D0 (en) 1993-01-06
EP0526491A1 (en) 1993-02-10

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19950423