GB2231197B - Electrode assembly and apparatus - Google Patents

Electrode assembly and apparatus

Info

Publication number
GB2231197B
GB2231197B GB9004980A GB9004980A GB2231197B GB 2231197 B GB2231197 B GB 2231197B GB 9004980 A GB9004980 A GB 9004980A GB 9004980 A GB9004980 A GB 9004980A GB 2231197 B GB2231197 B GB 2231197B
Authority
GB
United Kingdom
Prior art keywords
apparatus
electrode assembly
electrode
assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB9004980A
Other versions
GB9004980D0 (en
GB2231197A (en
Inventor
Keith Howard Bayliss
Mervyn Howard Davis
Gary Proudfoot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nordiko Ltd
UK Atomic Energy Authority
Original Assignee
Nordiko Ltd
UK Atomic Energy Authority
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GB898905075A priority Critical patent/GB8905075D0/en
Application filed by Nordiko Ltd, UK Atomic Energy Authority filed Critical Nordiko Ltd
Publication of GB9004980D0 publication Critical patent/GB9004980D0/en
Publication of GB2231197A publication Critical patent/GB2231197A/en
Application granted granted Critical
Publication of GB2231197B publication Critical patent/GB2231197B/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431Constructional details of the reactor
    • H01J37/3266Magnetic control means
    • H01J37/32688Multi-cusp fields
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching
    • H01J2237/3343Problems associated with etching
    • H01J2237/3345Problems associated with etching anisotropy
GB9004980A 1989-03-06 1990-03-06 Electrode assembly and apparatus Expired - Lifetime GB2231197B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB898905075A GB8905075D0 (en) 1989-03-06 1989-03-06 Electrode assembly and apparatus

Publications (3)

Publication Number Publication Date
GB9004980D0 GB9004980D0 (en) 1990-05-02
GB2231197A GB2231197A (en) 1990-11-07
GB2231197B true GB2231197B (en) 1994-03-30

Family

ID=10652818

Family Applications (2)

Application Number Title Priority Date Filing Date
GB898905075A Pending GB8905075D0 (en) 1989-03-06 1989-03-06 Electrode assembly and apparatus
GB9004980A Expired - Lifetime GB2231197B (en) 1989-03-06 1990-03-06 Electrode assembly and apparatus

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB898905075A Pending GB8905075D0 (en) 1989-03-06 1989-03-06 Electrode assembly and apparatus

Country Status (1)

Country Link
GB (2) GB8905075D0 (en)

Cited By (11)

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US6023038A (en) 1997-09-16 2000-02-08 Applied Materials, Inc. Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system
US6458672B1 (en) 1997-05-12 2002-10-01 Silicon Genesis Corporation Controlled cleavage process and resulting device using beta annealing
US6486041B2 (en) 1997-05-12 2002-11-26 Silicon Genesis Corporation Method and device for controlled cleaving process
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6514838B2 (en) 1998-02-17 2003-02-04 Silicon Genesis Corporation Method for non mass selected ion implant profile control
US6513564B2 (en) 1999-08-10 2003-02-04 Silicon Genesis Corporation Nozzle for cleaving substrates
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US6632324B2 (en) 1995-07-19 2003-10-14 Silicon Genesis Corporation System for the plasma treatment of large area substrates
US7687909B2 (en) 1997-11-26 2010-03-30 Applied Materials, Inc. Metal / metal nitride barrier layer for semiconductor device applications
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
US9390970B2 (en) 1997-11-26 2016-07-12 Applied Materials, Inc. Method for depositing a diffusion barrier layer and a metal conductive layer

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US6054013A (en) * 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US5280154A (en) * 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
US5277751A (en) * 1992-06-18 1994-01-11 Ogle John S Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window
US6225744B1 (en) 1992-11-04 2001-05-01 Novellus Systems, Inc. Plasma process apparatus for integrated circuit fabrication having dome-shaped induction coil
US5346578A (en) * 1992-11-04 1994-09-13 Novellus Systems, Inc. Induction plasma source
US5433812A (en) * 1993-01-19 1995-07-18 International Business Machines Corporation Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
FR2707449B1 (en) * 1993-07-05 1995-08-11 Cit Alcatel A plasma reactor for a process for deposition or etching.
DE4337309A1 (en) * 1993-08-26 1995-03-02 Leybold Ag Method and device for etching thin films, preferably indium tin oxide films
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5865896A (en) 1993-08-27 1999-02-02 Applied Materials, Inc. High density plasma CVD reactor with combined inductive and capacitive coupling
AT251798T (en) 1994-04-28 2003-10-15 Applied Materials Inc A method of operating a CVD reactor high plasma density with a combined inductive and capacitive coupling
US5540800A (en) * 1994-06-23 1996-07-30 Applied Materials, Inc. Inductively coupled high density plasma reactor for plasma assisted materials processing
US5580385A (en) * 1994-06-30 1996-12-03 Texas Instruments, Incorporated Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber
US5540824A (en) * 1994-07-18 1996-07-30 Applied Materials Plasma reactor with multi-section RF coil and isolated conducting lid
US6369348B2 (en) 1997-06-30 2002-04-09 Applied Materials, Inc Plasma reactor with coil antenna of plural helical conductors with equally spaced ends
US5919382A (en) * 1994-10-31 1999-07-06 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
AT181637T (en) * 1994-10-31 1999-07-15 Applied Materials Inc Plasma reactors for wafer-treatment
US5777289A (en) * 1995-02-15 1998-07-07 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US5688357A (en) * 1995-02-15 1997-11-18 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
US6270617B1 (en) 1995-02-15 2001-08-07 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US5753044A (en) * 1995-02-15 1998-05-19 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
GB9506676D0 (en) * 1995-03-31 1995-05-24 Applied Vision Ltd Plasma sources
US6238533B1 (en) * 1995-08-07 2001-05-29 Applied Materials, Inc. Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
US5962923A (en) * 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
US5785878A (en) * 1995-11-02 1998-07-28 Applied Materials, Inc. RF antenna having high temperature, oxidation resistant coating
US6264812B1 (en) * 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
JPH09180897A (en) * 1995-12-12 1997-07-11 Applied Materials Inc Gas supply device for a high-density plasma reactor
KR100489918B1 (en) 1996-05-09 2005-08-04 어플라이드 머티어리얼스, 인코포레이티드 Coils for generating a plasma and for sputtering
US6254746B1 (en) 1996-05-09 2001-07-03 Applied Materials, Inc. Recessed coil for generating a plasma
US6368469B1 (en) 1996-05-09 2002-04-09 Applied Materials, Inc. Coils for generating a plasma and for sputtering
US5942855A (en) * 1996-08-28 1999-08-24 Northeastern University Monolithic miniaturized inductively coupled plasma source
US6254737B1 (en) 1996-10-08 2001-07-03 Applied Materials, Inc. Active shield for generating a plasma for sputtering
US6514390B1 (en) 1996-10-17 2003-02-04 Applied Materials, Inc. Method to eliminate coil sputtering in an ICP source
US5961793A (en) * 1996-10-31 1999-10-05 Applied Materials, Inc. Method of reducing generation of particulate matter in a sputtering chamber
TW358964B (en) 1996-11-21 1999-05-21 Applied Materials Inc Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6451179B1 (en) 1997-01-30 2002-09-17 Applied Materials, Inc. Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6599399B2 (en) 1997-03-07 2003-07-29 Applied Materials, Inc. Sputtering method to generate ionized metal plasma using electron beams and magnetic field
US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6103070A (en) * 1997-05-14 2000-08-15 Applied Materials, Inc. Powered shield source for high density plasma
US6190513B1 (en) 1997-05-14 2001-02-20 Applied Materials, Inc. Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition
US6210539B1 (en) 1997-05-14 2001-04-03 Applied Materials, Inc. Method and apparatus for producing a uniform density plasma above a substrate
US6361661B2 (en) 1997-05-16 2002-03-26 Applies Materials, Inc. Hybrid coil design for ionized deposition
US6077402A (en) * 1997-05-16 2000-06-20 Applied Materials, Inc. Central coil design for ionized metal plasma deposition
US6579426B1 (en) 1997-05-16 2003-06-17 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6652717B1 (en) 1997-05-16 2003-11-25 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6103599A (en) * 1997-07-25 2000-08-15 Silicon Genesis Corporation Planarizing technique for multilayered substrates
US5982100A (en) * 1997-07-28 1999-11-09 Pars, Inc. Inductively coupled plasma reactor
US6375810B2 (en) 1997-08-07 2002-04-23 Applied Materials, Inc. Plasma vapor deposition with coil sputtering
US6235169B1 (en) 1997-08-07 2001-05-22 Applied Materials, Inc. Modulated power for ionized metal plasma deposition
US6345588B1 (en) 1997-08-07 2002-02-12 Applied Materials, Inc. Use of variable RF generator to control coil voltage distribution
US6565717B1 (en) 1997-09-15 2003-05-20 Applied Materials, Inc. Apparatus for sputtering ionized material in a medium to high density plasma
US6042700A (en) * 1997-09-15 2000-03-28 Applied Materials, Inc. Adjustment of deposition uniformity in an inductively coupled plasma source
US6280579B1 (en) 1997-12-19 2001-08-28 Applied Materials, Inc. Target misalignment detector
US6228176B1 (en) 1998-02-11 2001-05-08 Silicon Genesis Corporation Contoured platen design for plasma immerson ion implantation
US6051073A (en) * 1998-02-11 2000-04-18 Silicon Genesis Corporation Perforated shield for plasma immersion ion implantation
US6254738B1 (en) 1998-03-31 2001-07-03 Applied Materials, Inc. Use of variable impedance having rotating core to control coil sputter distribution
US6146508A (en) * 1998-04-22 2000-11-14 Applied Materials, Inc. Sputtering method and apparatus with small diameter RF coil
US6660134B1 (en) 1998-07-10 2003-12-09 Applied Materials, Inc. Feedthrough overlap coil
TW434636B (en) 1998-07-13 2001-05-16 Applied Komatsu Technology Inc RF matching network with distributed outputs
US6132566A (en) * 1998-07-30 2000-10-17 Applied Materials, Inc. Apparatus and method for sputtering ionized material in a plasma
US6231725B1 (en) 1998-08-04 2001-05-15 Applied Materials, Inc. Apparatus for sputtering material onto a workpiece with the aid of a plasma
US6238528B1 (en) 1998-10-13 2001-05-29 Applied Materials, Inc. Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source
US6028286A (en) * 1998-12-30 2000-02-22 Lam Research Corporation Method for igniting a plasma inside a plasma processing reactor
US6217718B1 (en) 1999-02-17 2001-04-17 Applied Materials, Inc. Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma
US6341574B1 (en) * 1999-11-15 2002-01-29 Lam Research Corporation Plasma processing systems
US6544862B1 (en) 2000-01-14 2003-04-08 Silicon Genesis Corporation Particle distribution method and resulting structure for a layer transfer process
US6462481B1 (en) 2000-07-06 2002-10-08 Applied Materials Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6409933B1 (en) 2000-07-06 2002-06-25 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6685798B1 (en) 2000-07-06 2004-02-03 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
US6414648B1 (en) 2000-07-06 2002-07-02 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6694915B1 (en) 2000-07-06 2004-02-24 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
KR101038204B1 (en) 2004-02-25 2011-05-31 주성엔지니어링(주) Antenna for plasma
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
PL2251454T3 (en) 2009-05-13 2014-12-31 Sio2 Medical Products Inc Vessel coating and inspection
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
WO2013071138A1 (en) 2011-11-11 2013-05-16 Sio2 Medical Products, Inc. PASSIVATION, pH PROTECTIVE OR LUBRICITY COATING FOR PHARMACEUTICAL PACKAGE, COATING PROCESS AND APPARATUS
WO2013170052A1 (en) 2012-05-09 2013-11-14 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
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EP2920567A1 (en) 2012-11-16 2015-09-23 SiO2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
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Citations (5)

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Publication number Priority date Publication date Assignee Title
GB1230982A (en) * 1967-05-11 1971-05-05
EP0073963A2 (en) * 1981-09-01 1983-03-16 The Perkin-Elmer Corporation Inductively coupled discharge for plasma etching and resist stripping
EP0184812A2 (en) * 1984-12-11 1986-06-18 Hitachi, Ltd. High frequency plasma generation apparatus
GB2170350A (en) * 1984-12-13 1986-07-30 Stc Plc Plasma reactor vessel and process
EP0261922A2 (en) * 1986-09-23 1988-03-30 Nordiko Limited Electrode assembly and apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1230982A (en) * 1967-05-11 1971-05-05
EP0073963A2 (en) * 1981-09-01 1983-03-16 The Perkin-Elmer Corporation Inductively coupled discharge for plasma etching and resist stripping
EP0184812A2 (en) * 1984-12-11 1986-06-18 Hitachi, Ltd. High frequency plasma generation apparatus
GB2170350A (en) * 1984-12-13 1986-07-30 Stc Plc Plasma reactor vessel and process
EP0261922A2 (en) * 1986-09-23 1988-03-30 Nordiko Limited Electrode assembly and apparatus

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6632324B2 (en) 1995-07-19 2003-10-14 Silicon Genesis Corporation System for the plasma treatment of large area substrates
US6558802B1 (en) 1997-05-12 2003-05-06 Silicon Genesis Corporation Silicon-on-silicon hybrid wafer assembly
US6458672B1 (en) 1997-05-12 2002-10-01 Silicon Genesis Corporation Controlled cleavage process and resulting device using beta annealing
US6486041B2 (en) 1997-05-12 2002-11-26 Silicon Genesis Corporation Method and device for controlled cleaving process
US6511899B1 (en) 1997-05-12 2003-01-28 Silicon Genesis Corporation Controlled cleavage process using pressurized fluid
US6632724B2 (en) 1997-05-12 2003-10-14 Silicon Genesis Corporation Controlled cleaving process
US6528391B1 (en) 1997-05-12 2003-03-04 Silicon Genesis, Corporation Controlled cleavage process and device for patterned films
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US6023038A (en) 1997-09-16 2000-02-08 Applied Materials, Inc. Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system
US7687909B2 (en) 1997-11-26 2010-03-30 Applied Materials, Inc. Metal / metal nitride barrier layer for semiconductor device applications
US9390970B2 (en) 1997-11-26 2016-07-12 Applied Materials, Inc. Method for depositing a diffusion barrier layer and a metal conductive layer
US6514838B2 (en) 1998-02-17 2003-02-04 Silicon Genesis Corporation Method for non mass selected ion implant profile control
US6513564B2 (en) 1999-08-10 2003-02-04 Silicon Genesis Corporation Nozzle for cleaving substrates
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling

Also Published As

Publication number Publication date
GB9004980D0 (en) 1990-05-02
GB8905075D0 (en) 1989-04-19
GB2231197A (en) 1990-11-07

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PE20 Patent expired after termination of 20 years

Expiry date: 20100305