GB2158311A - Output stage for a logic circuit - Google Patents

Output stage for a logic circuit Download PDF

Info

Publication number
GB2158311A
GB2158311A GB08410616A GB8410616A GB2158311A GB 2158311 A GB2158311 A GB 2158311A GB 08410616 A GB08410616 A GB 08410616A GB 8410616 A GB8410616 A GB 8410616A GB 2158311 A GB2158311 A GB 2158311A
Authority
GB
United Kingdom
Prior art keywords
transistor
output
conductor
logic
drive signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB08410616A
Other versions
GB8410616D0 (en
GB2158311B (en
Inventor
Richard David Simpson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Ltd
Original Assignee
Texas Instruments Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Ltd filed Critical Texas Instruments Ltd
Priority to GB08410616A priority Critical patent/GB2158311B/en
Publication of GB8410616D0 publication Critical patent/GB8410616D0/en
Publication of GB2158311A publication Critical patent/GB2158311A/en
Application granted granted Critical
Publication of GB2158311B publication Critical patent/GB2158311B/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01Modifications for accelerating switching
    • H03K19/017Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01721Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by means of a pull-up or down element
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09425Multistate logic
    • H03K19/09429Multistate logic one of the states being the high impedance or floating state

Abstract

An output stage for a logic circuit includes a source follower first output transistor (M0) in parallel with a second transistor (M1) having a channel of the opposite conductivity type to the first transistor and connected in a common source circuit. A logic drive signal (D) initially turns on both transistors and the voltage on output line (2) rises rapidly. When the output passes a threshold value, the connection of the logic drive signal to the second transistor is disabled by a trigger circuit (11, M4), the first transistor (M0) remaining conductive until the end of the logic drive signal. The stage has a tristate condition in which all transistors connected to the output conductor are non-conducting. <IMAGE>

Description

SPECIFICATION Output stage for a logic circuit This invention relates to an output stage for a logic circuit.
In digital circuits the logic state is represented by the voltage on a conductor. Usually there are two logic states sometimes known as "high" and "low", and in so-called positive logic a "high" may be represented by a voltage greater than 2.4 volts and a "low" by a voltage below 0.8 volts. These critical voltages are set arbitrarily but are fixed for any given type of logic circuit, such as TTL, ECL and CMOS, so that different logic circuits can be interconnected in any required manner and will function satisfactorily. An important factor in the speed of operation of logic circuits is the minimum time within which the output voltage of a circuit can be changed from that representing one logic state to that representing the other logic state, in particular the "low" to "high" rise time.
In certain types of CMOS logic circuit it is necessary to have an output stage to provide the power to drive several other circuits and one form of output stage consists of a single MOS transistor connected as a source follower which means that the rate of rise from "low" to "high" on the output conductor can be no faster than that of the drive signal applied to the transistor and will probably be slightly slower because of the stray capacitance associated with the output conductor itself. It follows therefore that the response time of the circuit with such an output stage is slower as a result of the presence of the output stage.
It would be possible to reduce the rise time by the use of a supply voltage, say 5 volts, which is much higher than that corresponding to the "high" state, 2.4 volts as mentioned above, but this would result in the output voltage finally attaining that of the supply leading to a slowing down of the downward transition, from "high" to "low", due to the greater change in voltage required. In addition, the use of a larger output voltage swing than would be required by the separation between the "high" and "low" logic levels would result in an unnecessarily high power consumption since the consumption is proportional to the square of the voltage swing, if the other relevant factors are kept constant.
It is an object of the invention to provide an output stage suitable for a CMOS logic circuit capable of a faster rate of change between logic states.
According to the invention there is provided an output stage for a logic circuit on an integrated circuit having a first MOS transistor with a channel of a first conductivity type having its drain connected to a reference voltage conductor and its source connected to an output conductor, the gate of the first transistor being connected to receive a logic drive signal such as to render the first transistor conducting and produce a similar logic output signal on the output conductor, wherein a second MOS transistor is connected in parallel with the first transistor, the second transistor having a channel of a second conductivity type opposite to the first and the gate of the second transistor being connected to receive in inverted form the initial part of the logic drive signal, whereby the second transistor is rendered conducting for the initial part and enhances the rate of transition of the logic output signal on the output conductor.
The stage is particularly suitable for a CMOS logic circuit because the transistors required can be produced by the processes used to form the logic circuit itself, so that all that is required to implement the invention is a small additional chip area and some extra patterning on the masks.
The stage may include a third MOS transistor similar to the first transistor, connected from the output conductor to a second reference voltage conductor, and having its gate electrode connected to receive the logic drive signal in inverted form, the third transistor serving to discharge the output conductor to substantially the voltage of the second reference voltage conductor at the end of a logic drive signal.
The gate of the second transistor may be connected to means producing the inerted logic drive signal through a further MOS transistor having its gate connected to respond to the signal on the output conductor so that the further transistor ceases to conduct and thereby disconnects the inverted logic drive signal from the gate of the second transistor when the initial transition of the logic output signal on the output conductor occurs.
The stage may be provided with a tristate control in response to which all of the transistors connected to the output conductor are rendered non-conducting so that the output conductor can be set to any logic level by external means and the stage will provide no loading on it.
In order that the invention may be fully understood and readily carried into effect, it will now be described with reference to the single embodiment, the circuit of which is shown in the accompanying drawing.
In Fig. 1 the input binary data to the stage is fed in inverted form via a conductor 1 and appears on the output conductor 2 in erect form. The stage is powered by a 5-volt supply having its positive connection on a conductor 3 and its negative on a conductor 4. The input data on conductor 1 is inverted by inverter 5 and applied to one input of a NAND gate 6. The output of the gate 6 is inverted by inverter 7 and applied to the gate of an N-channel transistor MO. The source drain path of the transistor MO is connected from the supply conductor 3 to the output conductor. 2. The conductor 1 is also connected via a second NAND gate 8 and an inverter 9 to the gate of a second N-channel transistor M7, the source-drain path of which is connected from the supply conductor 4 to the output conductor 2.A tristate signal in inverted form is applied via a conductor 10 to inputs of the NAND gates 6 and 8 and also to the gates of an N-channel transistor M5 and a P-channel transistor M6. The source-drain path of the transistor M5 is connected from the conductor 2 to the input of an inverter 11, the output of which is connected to the gates of a P-channel transistor M2, an Nchannel transistor M3 and a P-channel transistor M4. The source-drain paths of the transistors M4 and M6 are connected in parallel between the conductor 3 and the input of the inverter 11. The source-drain path of the transistor M3 is connected from the output of the inverter 9 to the gate of a P-channel transistor M1, which gate is connected through the source-drain path of the transistor M2 to the conductor 3.The source-drain path of the transistor Ml is connected in parallel with that of the transistor MO from the conductor 3 to the output conductor 2.
In the operation of the stage described, the conductor 10 being high because the stage is not in the tristate condition, an outgoing digit "1" which appears on the conductor 1 as a low serves to turn on the transistor MO and raise the potential of the output conductor 2 to a logical high value. Typically a logical high will be above 2.4 volts and a logical low will be below 0.4 volts, although the critical values would probably be 2.0 and 0.8 volts respectively. The capacitor C shown in the figure represents the stray capacitance associated with the output conductor 2 and must be charged and discharged as the output voltage is changed.It will be appreciated that the Nchannel device MO acts as a source follower so that the voltage on the output conductor 2 can only rise at the rate at which the voltage applied to its gate rises, and will in fact be slightly slower than this because of the delaying effect of the capacitor C. When the digit "1" comes to an end, the conductor 1 goes high and the transistor MO is turned off. At this time the transistor M7 becomes conducting and serves to discharge the capacitor C to the conductor 4. The invention provides a Pchannel transistor M1 in parallel with the transistor MO so that the transistor M1 acts as a grounded source amplifier which, by virtue of its gain, does not impose the rise time limitation on the rate of rise of the voltage on the output conductor 2.The transistor Ml is turned on by a negative-going voltage applied to its gate from the output of the inverter 9 applied via the transistor M3, which is conducting when the output voltage on the conductor 2 is low. As the voltage on the conductor 2 rises, it is conveyed through the transistor M5 to the inverter 11, the falling output of which switches off the transistor M3 once the output voltage has reached the threshold between low and high. Thus the transistor M1 is conducting for only the initial part of the rise from low to high of the conductor 2 and is then turned off, but the resulting accelerated rise can occur in 3 ns.If the transistor M1 were to be kept conducting the output voltage on the conductor 2 would reach the voltage of the supply conductor 3 with the consequent slowing down of the downward transition, from high to low, mentioned above. The control of the transistor M1 is arranged to avoid this difficulty. The falling at the output of the inverter 11 also causes the transistor M2 to conduct, thus effectively connecting the gate of the transistor M1 to conductor 3 and thereby accelerating the end of the conduction of the transistor M1. The transistor M4 applies positive feedback over the inverter 11 so as to cause it to switch rapidly between states when the voltage on the conductor 2 reaches the threshold between low and high.Throughout this time the transistor M5 is maintained in a conducting state by the inverted tristate input on the conductor 10, which is high at this time. The transistor M6 is non-conducting at this time. At the end of a digit "1", the transistors M1 to M6 and the inverter 11 play no part in the discharging of the capacitor C which is effected by the transistor M7 as described above.
The stage illustrated also has a tristate condition in which the voltage of the output conductor 2 can be set to any level by an external means without the stage imposing any load on that means. In this state, the voltage on the conductor 10 is low so that the NAND gates 6 and 8 are blocked to the passage of signals, the transistor M5 is not conducting, and the transistor M6 becomes conducting. As a result of this, the input to the inverter 11 is held low so that the gate of the transistor Ml is held high by the transistor M2, and transistors MO and M7 are held nonconducting by the outputs of the inverters 7 and 9.

Claims (9)

1. An output stage for a logic circuit on an integrated circuit having an first MOS transistor with a channel of a first conductivity type having its drain connected to a reference voltage conductor and its source connected to an output conductor, the gate of the first transistor being connected to receive a logic drive signal such as to render the first transistor conducting and produce a similar logic output signal on the output conductor, wherein a second MOS transistor is connected in parallel with the first transistor, the second transistor having a channel of a second con ductivity type opposite to the first and the gate of the second transistor being connected to receive in inverted form the initial part of the logic drive signal, whereby the second transistor is rendered conducting for the initial part and enhances the rate of transition of the logic output signal on the output conductor.
2. An output stage according to claim 1, wherein the second MOS transistor receives the inverted initial part of the logic drive signal through a further MOS transistor the conductivity of which is controlled by the logic output signal on the output conductor so that the further transistor becomes non-conducting when that signal attains a threshold voltage during its transition in response to the logic drive signal.
3. An output stage according to claim 2 in which the output conductor is connected to the gate of the further transistor by means of a trigger circuit which changes state at the threshold voltage.
4. An output stage according to claim 3 including another MOS transistor responsive to the state of the trigger circuit to connect the gate of the second transistor to the reference voltage conductor when the further transistor becomes non-conducting.
5. An output stage according to any preceding claim wherein there is provided an additional MOS transistor responsive to the logic drive signal and having a channel connected from the output conductor to a second reference voltage conductor, whereby the additional transistor serves to discharge the output conductor to substantially the voltage of the second reference conductor at the end of a logic drive signal.
6. An output stage according to any preceding claim including means responsive to a tristate control signal to disconnect the logic drive signal in both upright and inverted forms from the transistor and leave all the transistors whose channels are connected to the output conductor in a non-conducting condition, whereby when the tristate control signal is applied to the stage substantially all resistive loading on the output conductor by the stage is removed.
7. An output stage according to claim 6 and including the features of claim 3, wherein the means responsive to the tristate control signal includes gating means through which the logic drive signals are applied to the transistors, a transistor connected from the output conductor to the input of the trigger circuit, and a transistor connecting the input of the trigger circuit to the reference voltage conductor.
8. An output stage for a logic circuit substantially as described herein with reference to the single figure of the accompanying drawing.
9. An integrated circuit including one or more output stages according to any preceding claim.
GB08410616A 1984-04-26 1984-04-26 Output stage for a logic circuit Expired GB2158311B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB08410616A GB2158311B (en) 1984-04-26 1984-04-26 Output stage for a logic circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08410616A GB2158311B (en) 1984-04-26 1984-04-26 Output stage for a logic circuit

Publications (3)

Publication Number Publication Date
GB8410616D0 GB8410616D0 (en) 1984-05-31
GB2158311A true GB2158311A (en) 1985-11-06
GB2158311B GB2158311B (en) 1987-12-02

Family

ID=10560089

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08410616A Expired GB2158311B (en) 1984-04-26 1984-04-26 Output stage for a logic circuit

Country Status (1)

Country Link
GB (1) GB2158311B (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0214787A2 (en) * 1985-08-26 1987-03-18 Xerox Corporation Bus driver circuit
EP0328168A1 (en) * 1988-01-14 1989-08-16 Koninklijke Philips Electronics N.V. Push-pull output circuit which is free from hot carrier stress
EP0381241A2 (en) * 1989-02-03 1990-08-08 Nec Corporation High speed output circuit suitable for wired-or structure
EP0533339A2 (en) * 1991-09-16 1993-03-24 Advanced Micro Devices, Inc. CMOS output buffer circuits
GB2325322A (en) * 1997-05-16 1998-11-18 Samsung Electronics Co Ltd A high speed and low power signal line driver and semiconductor memory device using the same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0214787A2 (en) * 1985-08-26 1987-03-18 Xerox Corporation Bus driver circuit
EP0214787A3 (en) * 1985-08-26 1988-08-10 Xerox Corporation Bus driver circuit
EP0328168A1 (en) * 1988-01-14 1989-08-16 Koninklijke Philips Electronics N.V. Push-pull output circuit which is free from hot carrier stress
EP0381241A2 (en) * 1989-02-03 1990-08-08 Nec Corporation High speed output circuit suitable for wired-or structure
EP0381241A3 (en) * 1989-02-03 1990-12-27 Nec Corporation High speed output circuit suitable for wired-or structure
EP0533339A2 (en) * 1991-09-16 1993-03-24 Advanced Micro Devices, Inc. CMOS output buffer circuits
EP0533339A3 (en) * 1991-09-16 1995-02-08 Advanced Micro Devices Inc
GB2325322A (en) * 1997-05-16 1998-11-18 Samsung Electronics Co Ltd A high speed and low power signal line driver and semiconductor memory device using the same
US5936896A (en) * 1997-05-16 1999-08-10 Samsung Electronics, Co., Ltd. High speed and low power signal line driver and semiconductor memory device using the same
GB2325322B (en) * 1997-05-16 2001-10-03 Samsung Electronics Co Ltd A high speed and low power signal line driver and a semiconductor memory device using the same

Also Published As

Publication number Publication date
GB8410616D0 (en) 1984-05-31
GB2158311B (en) 1987-12-02

Similar Documents

Publication Publication Date Title
US4695744A (en) Level shift circuit including source follower output
US4812679A (en) Power-on reset circuit
EP0147598B1 (en) Clocked differential cascode voltage switch logic circuit
US5115150A (en) Low power CMOS bus receiver with small setup time
JP2559931B2 (en) CMOS receiver input interface circuit
KR950009087B1 (en) Output circuit of semiconductor integrated circuit
US4531068A (en) Bus line precharging tristate driver circuit
US4806786A (en) Edge set/reset latch circuit having low device count
US4593212A (en) TTL to CMOS input buffer
KR870006701A (en) Output buffer and control circuit providing output limit current ratio
US4150308A (en) CMOS level shifter
US4810910A (en) Sense amplifier with bit-line derived clocking
US4972102A (en) Single-ended sense amplifier with dual feedback and a latching disable mode that saves power
US5089723A (en) CMOS-based pseudo ECL output buffer
GB2289808A (en) CMOS driver with programmable switching speed
US3832574A (en) Fast insulated gate field effect transistor circuit using multiple threshold technology
EP0259861B1 (en) Buffer circuit operable with reduced power consumption
US3946245A (en) Fast-acting feedforward kicker circuit for use with two serially connected inverters
US4717845A (en) TTL compatible CMOS input circuit
GB2158311A (en) Output stage for a logic circuit
US4019070A (en) Circuit for setting an initial state after connection of a power supply
KR940003448A (en) Semiconductor memory
US5118972A (en) BiCMOS gate pull-down circuit
US3798466A (en) Circuits including combined field effect and bipolar transistors
US4406956A (en) FET Circuit for converting TTL to FET logic levels

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20020426