GB2092379B - Protective semi conductor device utilizing back-to-back zener diodes - Google Patents

Protective semi conductor device utilizing back-to-back zener diodes

Info

Publication number
GB2092379B
GB2092379B GB8202615A GB8202615A GB2092379B GB 2092379 B GB2092379 B GB 2092379B GB 8202615 A GB8202615 A GB 8202615A GB 8202615 A GB8202615 A GB 8202615A GB 2092379 B GB2092379 B GB 2092379B
Authority
GB
United Kingdom
Prior art keywords
zener diodes
device utilizing
conductor device
semi conductor
protective semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8202615A
Other languages
English (en)
Other versions
GB2092379A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB2092379A publication Critical patent/GB2092379A/en
Application granted granted Critical
Publication of GB2092379B publication Critical patent/GB2092379B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
GB8202615A 1981-02-04 1982-01-29 Protective semi conductor device utilizing back-to-back zener diodes Expired GB2092379B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/231,288 US4405933A (en) 1981-02-04 1981-02-04 Protective integrated circuit device utilizing back-to-back zener diodes

Publications (2)

Publication Number Publication Date
GB2092379A GB2092379A (en) 1982-08-11
GB2092379B true GB2092379B (en) 1984-10-10

Family

ID=22868576

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8202615A Expired GB2092379B (en) 1981-02-04 1982-01-29 Protective semi conductor device utilizing back-to-back zener diodes

Country Status (7)

Country Link
US (1) US4405933A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS57154879A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1170784A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3203066C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2499315A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2092379B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1149532B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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NL8103376A (nl) * 1981-07-16 1983-02-16 Philips Nv Weergeefinrichting.
JPS58168255A (ja) * 1982-03-30 1983-10-04 Fujitsu Ltd 半導体装置
JPS59155952A (ja) * 1983-02-25 1984-09-05 Nec Corp 半導体装置
JPS60140878A (ja) * 1983-12-28 1985-07-25 Origin Electric Co Ltd サージ吸収用半導体装置
US4758872A (en) * 1984-10-25 1988-07-19 Nec Corporation Integrated circuit fabricated in a semiconductor substrate
JPS61225875A (ja) * 1985-03-29 1986-10-07 Origin Electric Co Ltd サ−ジ吸収用半導体装置
US4631562A (en) * 1985-05-31 1986-12-23 Rca Corporation Zener diode structure
US4651178A (en) * 1985-05-31 1987-03-17 Rca Corporation Dual inverse zener diode with buried junctions
GB2179495B (en) * 1985-08-09 1989-07-26 Plessey Co Plc Protection structures for integrated circuits
IT1186338B (it) * 1985-10-29 1987-11-26 Sgs Microelettronica Spa Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione
JPH0666402B2 (ja) * 1985-12-12 1994-08-24 三菱電機株式会社 半導体集積回路装置の入力保護回路
IT1188398B (it) * 1986-02-18 1988-01-07 Sgs Microelettronica Spa Struttura integrata di protezione da scariche elettrostatische e dispositivo a semiconduttore incorporante la stessa
US4872039A (en) * 1986-04-25 1989-10-03 General Electric Company Buried lateral diode and method for making same
JPH0642554B2 (ja) * 1986-06-28 1994-06-01 新日本無線株式会社 半導体装置
JPS6329983A (ja) * 1986-07-23 1988-02-08 Origin Electric Co Ltd サ−ジ吸収用半導体装置
JPH056672Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1986-07-23 1993-02-19
JPS6370459A (ja) * 1986-09-11 1988-03-30 Origin Electric Co Ltd サ−ジ吸収用半導体装置
DE3714647C2 (de) * 1987-05-02 1993-10-07 Telefunken Microelectron Integrierte Schaltungsanordnung
FR2624655B1 (fr) * 1987-12-14 1990-05-11 Sgs Thomson Microelectronics Structure de protection d'un acces a un circuit integre
JPH04501687A (ja) * 1988-11-21 1992-03-26 トーマス ミュラー 文字を記入していない用紙及び／または文字を記入した用紙及び／またはフォーマット用紙を有しているカーボンコピーセット
GB8911360D0 (en) * 1989-05-17 1989-07-05 Sarnoff David Res Center Electronic charge protection devices
US5055888A (en) * 1989-06-21 1991-10-08 Texas Instrumenets Incorporated Zener diodes in a linear semiconductor device
DE4137084C2 (de) * 1991-11-12 1994-03-31 Telefunken Microelectron Halbleiteranordnung mit mindestens einem Bipolartransistor und einer Zenerdiode
US5600525A (en) * 1994-08-17 1997-02-04 David Sarnoff Research Center Inc ESD protection circuit for integrated circuit
US5519242A (en) * 1994-08-17 1996-05-21 David Sarnoff Research Center, Inc. Electrostatic discharge protection circuit for a NMOS or lateral NPN transistor
US6204717B1 (en) * 1995-05-22 2001-03-20 Hitachi, Ltd. Semiconductor circuit and semiconductor device for use in equipment such as a power converting apparatus
US5675469A (en) * 1995-07-12 1997-10-07 Motorola, Inc. Integrated circuit with electrostatic discharge (ESD) protection and ESD protection circuit
JPH10189761A (ja) * 1996-12-20 1998-07-21 Fuji Electric Co Ltd 半導体装置
US6054760A (en) * 1996-12-23 2000-04-25 Scb Technologies Inc. Surface-connectable semiconductor bridge elements and devices including the same
KR100482363B1 (ko) * 1997-10-14 2005-08-25 삼성전자주식회사 보호용다이오드를가지는반도체장치및그제조방법
IT1296832B1 (it) * 1997-12-02 1999-08-02 Sgs Thomson Microelectronics Struttura integrata di protezione con dispositivi a soglia di conduzione inversa prestabilita di polarizzazione
JP3955396B2 (ja) * 1998-09-17 2007-08-08 株式会社ルネサステクノロジ 半導体サージ吸収素子
US7098509B2 (en) * 2004-01-02 2006-08-29 Semiconductor Components Industries, L.L.C. High energy ESD structure and method
WO2008099317A1 (en) * 2007-02-12 2008-08-21 Nxp B.V. Esd-protection device, a semiconductor device and an integrated system in a package comprising such a device
US7888704B2 (en) * 2008-08-15 2011-02-15 System General Corp. Semiconductor device for electrostatic discharge protection
JP2013073992A (ja) 2011-09-27 2013-04-22 Semiconductor Components Industries Llc 半導体装置
JP2013073993A (ja) * 2011-09-27 2013-04-22 Semiconductor Components Industries Llc 半導体装置
JP6930481B2 (ja) * 2018-04-13 2021-09-01 株式会社デンソー 半導体装置およびその製造方法
US11558018B2 (en) 2020-01-29 2023-01-17 Nxp Usa, Inc. Integrated circuits containing vertically-integrated capacitor-avalanche diode structures

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1073551A (en) * 1964-07-02 1967-06-28 Westinghouse Electric Corp Integrated circuit comprising a diode and method of making the same
US3881179A (en) * 1972-08-23 1975-04-29 Motorola Inc Zener diode structure having three terminals
US3982263A (en) * 1974-05-02 1976-09-21 National Semiconductor Corporation Integrated circuit device comprising vertical channel FET resistor
US4127859A (en) * 1977-02-25 1978-11-28 National Semiconductor Corporation Integrated circuit subsurface zener diode

Also Published As

Publication number Publication date
JPS57154879A (en) 1982-09-24
DE3203066C2 (de) 1985-11-14
JPS6358380B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-11-15
GB2092379A (en) 1982-08-11
IT1149532B (it) 1986-12-03
DE3203066A1 (de) 1982-08-12
IT8219390A0 (it) 1982-02-01
FR2499315B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1984-01-13
US4405933A (en) 1983-09-20
FR2499315A1 (fr) 1982-08-06
CA1170784A (en) 1984-07-10

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20020128