GB202117193D0 - A method of plasma etching - Google Patents
A method of plasma etchingInfo
- Publication number
- GB202117193D0 GB202117193D0 GBGB2117193.9A GB202117193A GB202117193D0 GB 202117193 D0 GB202117193 D0 GB 202117193D0 GB 202117193 A GB202117193 A GB 202117193A GB 202117193 D0 GB202117193 D0 GB 202117193D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- plasma etching
- etching
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
- H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/18—Vacuum control means
- H01J2237/182—Obtaining or maintaining desired pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB2117193.9A GB202117193D0 (en) | 2021-11-29 | 2021-11-29 | A method of plasma etching |
| TW111135278A TW202321505A (zh) | 2021-11-29 | 2022-09-19 | 一種電漿蝕刻方法 |
| CN202211150597.9A CN116190222A (zh) | 2021-11-29 | 2022-09-21 | 等离子体刻蚀方法 |
| EP22197203.7A EP4192220A1 (en) | 2021-11-29 | 2022-09-22 | A method of plasma etching |
| KR1020220133294A KR20230080304A (ko) | 2021-11-29 | 2022-10-17 | 플라즈마 에칭 방법 |
| JP2022171258A JP2023080017A (ja) | 2021-11-29 | 2022-10-26 | プラズマエッチングの方法 |
| US17/983,341 US20230170188A1 (en) | 2021-11-29 | 2022-11-08 | Method of Plasma Etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB2117193.9A GB202117193D0 (en) | 2021-11-29 | 2021-11-29 | A method of plasma etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB202117193D0 true GB202117193D0 (en) | 2022-01-12 |
Family
ID=80038579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GBGB2117193.9A Ceased GB202117193D0 (en) | 2021-11-29 | 2021-11-29 | A method of plasma etching |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20230170188A1 (https=) |
| EP (1) | EP4192220A1 (https=) |
| JP (1) | JP2023080017A (https=) |
| KR (1) | KR20230080304A (https=) |
| CN (1) | CN116190222A (https=) |
| GB (1) | GB202117193D0 (https=) |
| TW (1) | TW202321505A (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4199687B1 (en) * | 2021-12-17 | 2024-04-10 | SPTS Technologies Limited | Plasma etching of additive-containing aln |
| GB202219567D0 (en) * | 2022-12-22 | 2023-02-08 | Spts Technologies Ltd | Method of plasma etching |
| CN117276076B (zh) * | 2023-11-09 | 2025-06-27 | 北京北方华创微电子装备有限公司 | 含Sc层的刻蚀方法、半导体器件及其制造方法及工艺设备 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003021002A1 (en) * | 2001-08-29 | 2003-03-13 | Tokyo Electron Limited | Apparatus and method for plasma processing |
| JP4401641B2 (ja) * | 2001-11-07 | 2010-01-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2008010611A (ja) * | 2006-06-29 | 2008-01-17 | Sony Corp | 半導体装置の製造方法および半導体装置 |
| KR20090086238A (ko) * | 2006-11-10 | 2009-08-11 | 에이전시 포 사이언스, 테크놀로지 앤드 리서치 | 마이크로기계 구조 및 마이크로기계 구조 제조방법 |
| JP2009055128A (ja) * | 2007-08-23 | 2009-03-12 | Nippon Dempa Kogyo Co Ltd | 薄膜圧電共振器の製造方法及び薄膜圧電共振器 |
| CN102280375B (zh) * | 2010-06-08 | 2013-10-16 | 中国科学院微电子研究所 | 一种先栅工艺中叠层金属栅结构的制备方法 |
| US20130119018A1 (en) * | 2011-11-15 | 2013-05-16 | Keren Jacobs Kanarik | Hybrid pulsing plasma processing systems |
| EP3539155A4 (en) * | 2016-11-10 | 2020-06-17 | The Government of the United States of America, as represented by the Secretary of the Navy | SCANDIUM-CONTAINING III-N ETCH STOP LAYERS FOR THE SELECTIVE ETCHING OF III-NITRIDES AND RELATED MATERIALS |
| US11173258B2 (en) * | 2018-08-30 | 2021-11-16 | Analog Devices, Inc. | Using piezoelectric electrodes as active surfaces for electroplating process |
-
2021
- 2021-11-29 GB GBGB2117193.9A patent/GB202117193D0/en not_active Ceased
-
2022
- 2022-09-19 TW TW111135278A patent/TW202321505A/zh unknown
- 2022-09-21 CN CN202211150597.9A patent/CN116190222A/zh active Pending
- 2022-09-22 EP EP22197203.7A patent/EP4192220A1/en active Pending
- 2022-10-17 KR KR1020220133294A patent/KR20230080304A/ko active Pending
- 2022-10-26 JP JP2022171258A patent/JP2023080017A/ja active Pending
- 2022-11-08 US US17/983,341 patent/US20230170188A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW202321505A (zh) | 2023-06-01 |
| CN116190222A (zh) | 2023-05-30 |
| US20230170188A1 (en) | 2023-06-01 |
| KR20230080304A (ko) | 2023-06-07 |
| EP4192220A1 (en) | 2023-06-07 |
| JP2023080017A (ja) | 2023-06-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AT | Applications terminated before publication under section 16(1) |