GB201117606D0 - Radio frequency integrated circuit - Google Patents
Radio frequency integrated circuitInfo
- Publication number
- GB201117606D0 GB201117606D0 GBGB1117606.2A GB201117606A GB201117606D0 GB 201117606 D0 GB201117606 D0 GB 201117606D0 GB 201117606 A GB201117606 A GB 201117606A GB 201117606 D0 GB201117606 D0 GB 201117606D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- integrated circuit
- radio frequency
- frequency integrated
- radio
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
- H03F3/45636—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedback means
- H03F3/45641—Measuring at the loading circuit of the differential amplifier
- H03F3/45645—Controlling the input circuit of the differential amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/207—A hybrid coupler being used as power measuring circuit at the output of an amplifier circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45292—Indexing scheme relating to differential amplifiers the AAC comprising biasing means controlled by the signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45301—Indexing scheme relating to differential amplifiers there are multiple cascaded folded or not folded common gate stages of a cascode dif amp
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45316—Indexing scheme relating to differential amplifiers the AAC comprising one or more discrete inductive elements or coils
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45352—Indexing scheme relating to differential amplifiers the AAC comprising a combination of a plurality of transistors, e.g. Darlington coupled transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45358—Indexing scheme relating to differential amplifiers the AAC comprising multiple transistors parallel coupled at their sources and drains only, e.g. in a cascode dif amp, only those forming the composite common source transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45396—Indexing scheme relating to differential amplifiers the AAC comprising one or more switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45424—Indexing scheme relating to differential amplifiers the CMCL comprising a comparator circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45434—Indexing scheme relating to differential amplifiers the CMCL output control signal being a voltage signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45528—Indexing scheme relating to differential amplifiers the FBC comprising one or more passive resistors and being coupled between the LC and the IC
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45536—Indexing scheme relating to differential amplifiers the FBC comprising a switch and being coupled between the LC and the IC
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45544—Indexing scheme relating to differential amplifiers the IC comprising one or more capacitors, e.g. coupling capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45554—Indexing scheme relating to differential amplifiers the IC comprising one or more coils
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45594—Indexing scheme relating to differential amplifiers the IC comprising one or more resistors, which are not biasing resistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45596—Indexing scheme relating to differential amplifiers the IC comprising one or more biasing resistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45618—Indexing scheme relating to differential amplifiers the IC comprising only one switch
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45704—Indexing scheme relating to differential amplifiers the LC comprising one or more parallel resonance circuits
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101117329A TW201249116A (en) | 2011-05-19 | 2012-05-16 | Radio frequency integrated circuit |
EP12727440.5A EP2710728A1 (en) | 2011-05-19 | 2012-05-18 | Radio frequency integrated circuit |
CN201280034977.4A CN103843248A (en) | 2011-05-19 | 2012-05-18 | Radio frequency integrated circuit |
PCT/IB2012/052499 WO2012156946A1 (en) | 2011-05-19 | 2012-05-18 | Radio frequency integrated circuit |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1108444.9A GB2481487B (en) | 2011-05-19 | 2011-05-19 | Amplifier |
US13/111,423 US8378748B2 (en) | 2011-05-19 | 2011-05-19 | Amplifier |
GB1115183.4A GB2486515B (en) | 2011-09-02 | 2011-09-02 | Apparatus and method for low noise amplification |
US13/224,430 US8427239B2 (en) | 2011-09-02 | 2011-09-02 | Apparatus and method for low noise amplification |
Publications (2)
Publication Number | Publication Date |
---|---|
GB201117606D0 true GB201117606D0 (en) | 2011-11-23 |
GB2490976A GB2490976A (en) | 2012-11-21 |
Family
ID=45091919
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1117607.0A Active GB2490977B (en) | 2011-05-19 | 2011-10-12 | Amplifier |
GB201206423A Expired - Fee Related GB2490995B (en) | 2011-05-19 | 2011-10-12 | Radio frequency integrated circuit |
GB201117606A Withdrawn GB2490976A (en) | 2011-05-19 | 2011-10-12 | LNAs adaptable between inductively degenerated and internal impedance matching configurations |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1117607.0A Active GB2490977B (en) | 2011-05-19 | 2011-10-12 | Amplifier |
GB201206423A Expired - Fee Related GB2490995B (en) | 2011-05-19 | 2011-10-12 | Radio frequency integrated circuit |
Country Status (1)
Country | Link |
---|---|
GB (3) | GB2490977B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106234557A (en) * | 2016-10-10 | 2016-12-21 | 成都沃特塞恩电子技术有限公司 | A kind of radio frequency power source and radio frequency thawing apparatus |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9350310B2 (en) | 2013-05-24 | 2016-05-24 | Qualcomm Incorporated | Receiver front end for carrier aggregation |
GB2545487A (en) | 2015-12-18 | 2017-06-21 | Nordic Semiconductor Asa | Radio frequency receiver |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10132800C1 (en) * | 2001-07-06 | 2003-01-30 | Infineon Technologies Ag | Low noise amplifier circuit |
KR100704568B1 (en) * | 2002-08-05 | 2007-04-06 | 인티그런트 테크놀로지즈(주) | Variable Gain Low Noise Amplifier |
US6949979B2 (en) * | 2002-12-05 | 2005-09-27 | Memetics Technology Co. LTD | Designing methods and circuits for multi-band electronic circuits |
US7084707B2 (en) * | 2004-09-24 | 2006-08-01 | Realtek Semiconductor Corp. | Low noise amplifier and related method |
US7843270B2 (en) * | 2006-10-04 | 2010-11-30 | Nanyang Technological University | Low noise amplifier circuit with noise cancellation and increased gain |
US7633345B2 (en) * | 2007-12-26 | 2009-12-15 | Mediatek Inc. | Amplifier and the method thereof |
KR101019716B1 (en) * | 2008-12-29 | 2011-03-07 | 한국과학기술원 | All band-low noise amplifier |
US8374557B2 (en) * | 2009-07-06 | 2013-02-12 | Rfaxis, Inc. | Radio frequency front end circuit with antenna diversity for multipath mitigation |
CN101834576B (en) * | 2010-04-08 | 2012-12-12 | 复旦大学 | Multimode tunable CMOS (Complementary Metal Oxide Semiconductor) differential low noise amplifier |
CN101951229A (en) * | 2010-10-15 | 2011-01-19 | 成都国腾电子技术股份有限公司 | Multi-gain mode low-noise amplifier |
-
2011
- 2011-10-12 GB GB1117607.0A patent/GB2490977B/en active Active
- 2011-10-12 GB GB201206423A patent/GB2490995B/en not_active Expired - Fee Related
- 2011-10-12 GB GB201117606A patent/GB2490976A/en not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106234557A (en) * | 2016-10-10 | 2016-12-21 | 成都沃特塞恩电子技术有限公司 | A kind of radio frequency power source and radio frequency thawing apparatus |
Also Published As
Publication number | Publication date |
---|---|
GB2490995A (en) | 2012-11-21 |
GB201117607D0 (en) | 2011-11-23 |
GB2490995B (en) | 2013-05-15 |
GB2490976A (en) | 2012-11-21 |
GB2490977A (en) | 2012-11-21 |
GB201206423D0 (en) | 2012-05-30 |
GB2490977B (en) | 2016-01-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) |
Free format text: REGISTERED BETWEEN 20140102 AND 20140108 |
|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) |
Free format text: REGISTERED BETWEEN 20140109 AND 20140115 |
|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |