GB1563913A - Method of making schottky-barrier gallium arsenide field effect devices - Google Patents

Method of making schottky-barrier gallium arsenide field effect devices Download PDF

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Publication number
GB1563913A
GB1563913A GB48979/76A GB4897976A GB1563913A GB 1563913 A GB1563913 A GB 1563913A GB 48979/76 A GB48979/76 A GB 48979/76A GB 4897976 A GB4897976 A GB 4897976A GB 1563913 A GB1563913 A GB 1563913A
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GB
United Kingdom
Prior art keywords
gate
channel
source
region
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB48979/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of GB1563913A publication Critical patent/GB1563913A/en
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
GB48979/76A 1975-12-12 1976-11-24 Method of making schottky-barrier gallium arsenide field effect devices Expired GB1563913A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64012475A 1975-12-12 1975-12-12

Publications (1)

Publication Number Publication Date
GB1563913A true GB1563913A (en) 1980-04-02

Family

ID=24566939

Family Applications (1)

Application Number Title Priority Date Filing Date
GB48979/76A Expired GB1563913A (en) 1975-12-12 1976-11-24 Method of making schottky-barrier gallium arsenide field effect devices

Country Status (2)

Country Link
FR (1) FR2335041A1 (enrdf_load_stackoverflow)
GB (1) GB1563913A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2133621A (en) * 1983-01-11 1984-07-25 Emi Ltd Junction field effect transistor
CN113053742A (zh) * 2021-03-12 2021-06-29 浙江集迈科微电子有限公司 GaN器件及制备方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1131450B (it) * 1980-05-07 1986-06-25 Cise Spa Procedimento per la produzione di transistori ad effetto di campo per microonde
FR2496982A1 (fr) * 1980-12-24 1982-06-25 Labo Electronique Physique Procede de fabrication de transistors a effet de champ, a grille auto-alignee, et transistors ainsi obtenus
FR2558647B1 (fr) * 1984-01-23 1986-05-09 Labo Electronique Physique Transistor a effet de champ de type schottky pour applications hyperfrequences et procede de realisation permettant d'obtenir un tel transistor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2104704B1 (enrdf_load_stackoverflow) * 1970-08-07 1973-11-23 Thomson Csf
US3920861A (en) * 1972-12-18 1975-11-18 Rca Corp Method of making a semiconductor device
US3942186A (en) * 1973-10-09 1976-03-02 Westinghouse Electric Corporation High frequency, field-effect transistor
US3898353A (en) * 1974-10-03 1975-08-05 Us Army Self aligned drain and gate field effect transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2133621A (en) * 1983-01-11 1984-07-25 Emi Ltd Junction field effect transistor
CN113053742A (zh) * 2021-03-12 2021-06-29 浙江集迈科微电子有限公司 GaN器件及制备方法
CN113053742B (zh) * 2021-03-12 2024-06-11 浙江集迈科微电子有限公司 GaN器件及制备方法

Also Published As

Publication number Publication date
FR2335041B1 (enrdf_load_stackoverflow) 1980-08-14
FR2335041A1 (fr) 1977-07-08

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19921124