GB1455949A - Semiconductor devices cutting out a part from sheet metal by means of oxy - Google Patents

Semiconductor devices cutting out a part from sheet metal by means of oxy

Info

Publication number
GB1455949A
GB1455949A GB1902774A GB1902774A GB1455949A GB 1455949 A GB1455949 A GB 1455949A GB 1902774 A GB1902774 A GB 1902774A GB 1902774 A GB1902774 A GB 1902774A GB 1455949 A GB1455949 A GB 1455949A
Authority
GB
United Kingdom
Prior art keywords
polycrystalline
localized
deposited
semi
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1902774A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1455949A publication Critical patent/GB1455949A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/934—Sheet resistance, i.e. dopant parameters

Landscapes

  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
GB1902774A 1973-06-28 1974-05-01 Semiconductor devices cutting out a part from sheet metal by means of oxy Expired GB1455949A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US374426A US3874920A (en) 1973-06-28 1973-06-28 Boron silicide method for making thermally oxidized boron doped poly-crystalline silicon having minimum resistivity

Publications (1)

Publication Number Publication Date
GB1455949A true GB1455949A (en) 1976-11-17

Family

ID=23476767

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1902774A Expired GB1455949A (en) 1973-06-28 1974-05-01 Semiconductor devices cutting out a part from sheet metal by means of oxy

Country Status (6)

Country Link
US (1) US3874920A (https=)
JP (1) JPS5243066B2 (https=)
CA (1) CA1027025A (https=)
DE (1) DE2430859C3 (https=)
FR (1) FR2234921B1 (https=)
GB (1) GB1455949A (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1089298B (it) * 1977-01-17 1985-06-18 Mostek Corp Procedimento per fabbricare un dispositivo semiconduttore
US4381213A (en) * 1980-12-15 1983-04-26 Motorola, Inc. Partial vacuum boron diffusion process
US4356211A (en) * 1980-12-19 1982-10-26 International Business Machines Corporation Forming air-dielectric isolation regions in a monocrystalline silicon substrate by differential oxidation of polysilicon
US5213670A (en) * 1989-06-30 1993-05-25 Siemens Aktiengesellschaft Method for manufacturing a polycrystalline layer on a substrate
JP3119190B2 (ja) * 1997-01-24 2000-12-18 日本電気株式会社 半導体装置の製造方法
DE102007010563A1 (de) * 2007-02-22 2008-08-28 IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik Selektives Wachstum von polykristallinem siliziumhaltigen Halbleitermaterial auf siliziumhaltiger Halbleiteroberfläche

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1245335B (de) * 1964-06-26 1967-07-27 Siemens Ag Verfahren zur Herstellung einkristalliner, homogen bordotierter, insbesondere aus Silicium oder Germanium bestehender Aufwachsschichten auf einkristallinen Grundkoerpern
GB699545A (en) * 1966-09-08 1953-11-11 Harold Stuart Hallewell Improvements in forming means for profile grinding wheels
US3558374A (en) * 1968-01-15 1971-01-26 Ibm Polycrystalline film having controlled grain size and method of making same
US3765940A (en) * 1971-11-08 1973-10-16 Texas Instruments Inc Vacuum evaporated thin film resistors

Also Published As

Publication number Publication date
CA1027025A (en) 1978-02-28
FR2234921B1 (https=) 1976-06-25
DE2430859A1 (de) 1975-01-09
US3874920A (en) 1975-04-01
JPS5029167A (https=) 1975-03-25
FR2234921A1 (https=) 1975-01-24
JPS5243066B2 (https=) 1977-10-28
DE2430859C3 (de) 1981-10-22
DE2430859B2 (de) 1980-12-04

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee