GB1443588A - Memory circuits - Google Patents

Memory circuits

Info

Publication number
GB1443588A
GB1443588A GB2861074A GB2861074A GB1443588A GB 1443588 A GB1443588 A GB 1443588A GB 2861074 A GB2861074 A GB 2861074A GB 2861074 A GB2861074 A GB 2861074A GB 1443588 A GB1443588 A GB 1443588A
Authority
GB
United Kingdom
Prior art keywords
memory circuits
circuits
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2861074A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1443588A publication Critical patent/GB1443588A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Dram (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB2861074A 1973-06-30 1974-06-27 Memory circuits Expired GB1443588A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1973077693U JPS5522640Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-06-30 1973-06-30

Publications (1)

Publication Number Publication Date
GB1443588A true GB1443588A (en) 1976-07-21

Family

ID=13640960

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2861074A Expired GB1443588A (en) 1973-06-30 1974-06-27 Memory circuits

Country Status (8)

Country Link
US (1) US3919699A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5522640Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1025121A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2431580C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2235456B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1443588A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1015566B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL7408737A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4090256A (en) * 1975-05-27 1978-05-16 Motorola, Inc. First-in-first-out register implemented with single rank storage elements
GB1570887A (en) * 1976-03-13 1980-07-09 Ass Eng Ltd Speed responsive systems
DE2740113A1 (de) * 1977-09-06 1979-03-15 Siemens Ag Monolithisch integrierter halbleiterspeicher
JPS5753897A (en) * 1980-09-14 1982-03-31 Ricoh Co Ltd Signal detecting circuit
EP0065219B1 (en) * 1981-05-08 1987-08-26 Hitachi, Ltd. Signal voltage dividing circuit
US4578772A (en) * 1981-09-18 1986-03-25 Fujitsu Limited Voltage dividing circuit
US4656661A (en) * 1984-12-13 1987-04-07 American Telephone And Telegraph Company Switched capacitor coupled line receiver circuit
US6232931B1 (en) 1999-02-19 2001-05-15 The United States Of America As Represented By The Secretary Of The Navy Opto-electronically controlled frequency selective surface
FR2904463A1 (fr) * 2006-07-27 2008-02-01 St Microelectronics Sa Programmation d'un circuit de retention de charges pour mesure temporelle
EP2047476B1 (fr) * 2006-07-27 2010-12-22 STMicroelectronics SA Circuit de retention de charges pour mesure temporelle
FR2904464A1 (fr) * 2006-07-27 2008-02-01 St Microelectronics Sa Circuit eeprom de retention de charges pour mesure temporelle
CN101595530B (zh) * 2006-07-27 2012-12-05 意法半导体有限公司 读取用于进行时间测量的电荷保持元件的电路
FR2926382B1 (fr) * 2008-01-11 2010-02-26 Proton World Internat Nv Hierarchisation de cles cryptographiques dans un circuit electronique

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3373295A (en) * 1965-04-27 1968-03-12 Aerojet General Co Memory element
GB1256068A (en) * 1967-12-07 1971-12-08 Plessey Co Ltd Improvements in or relating to logic circuit arrangements
US3581292A (en) * 1969-01-07 1971-05-25 North American Rockwell Read/write memory circuit
US3618053A (en) * 1969-12-31 1971-11-02 Westinghouse Electric Corp Trapped charge memory cell
US3646525A (en) * 1970-01-12 1972-02-29 Ibm Data regeneration scheme without using memory sense amplifiers
JPS5244180B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1970-11-05 1977-11-05
US3652914A (en) * 1970-11-09 1972-03-28 Emerson Electric Co Variable direct voltage memory circuit

Also Published As

Publication number Publication date
JPS5025444U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1975-03-24
JPS5522640Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-05-29
NL7408737A (nl) 1975-01-02
FR2235456A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1975-01-24
DE2431580A1 (de) 1975-01-09
FR2235456B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1978-04-14
CA1025121A (en) 1978-01-24
DE2431580C2 (de) 1986-09-11
IT1015566B (it) 1977-05-20
US3919699A (en) 1975-11-11

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee