GB1418765A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1418765A
GB1418765A GB383673A GB383673A GB1418765A GB 1418765 A GB1418765 A GB 1418765A GB 383673 A GB383673 A GB 383673A GB 383673 A GB383673 A GB 383673A GB 1418765 A GB1418765 A GB 1418765A
Authority
GB
United Kingdom
Prior art keywords
zone
collector
electrodes
teeth
jan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB383673A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronics UK Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR7202947A priority Critical patent/FR2168982B1/fr
Application filed by Philips Electronics UK Ltd filed Critical Philips Electronics UK Ltd
Publication of GB1418765A publication Critical patent/GB1418765A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804Emitter regions of bipolar transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

1418765 Semiconductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 25 Jan 1973 [28 Jan 1972] 3836/73 Heading H1K In a semiconductor device, series resistors between a plurality of regions of one conductivity type and a common connection conductor are formed from a strip shaped resistive zone, the region contacts and conductor contacts alternating in the axial direction of the resistive zone. In the transistor embodiment shown, emitter series resistors are formed from a zone 13 diffused into the collector 10, the connection conductor 33 being comb shaped with teeth 32 contacting zone 13. The emitters 12 have electrodes 16 which are combined in pairs to contact the zone 13 alternately with teeth 32, the parts of zone 13 between teeth 32 and electrodes 16 constituting the resistors. The device also includes a base zone 11 with conductors 14 interdigitated with electrodes 16. Instead of a diffused zone, zone 13 may be a metal strip, e.g. of titanium lying on an insulating layer on the collector, or may be of a metal forming a Schottky barrier with the collector. The body may be of silicon, and include an epitaxial layer forming the collector, the insulating material being of silicon oxide, the regions being formed by diffusion or ion implantation. The electrodes may be of aluminium. The invention is said to be applicable to diodes and thyristors.
GB383673A 1972-01-28 1973-01-25 Semiconductor devices Expired GB1418765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7202947A FR2168982B1 (en) 1972-01-28 1972-01-28

Publications (1)

Publication Number Publication Date
GB1418765A true GB1418765A (en) 1975-12-24

Family

ID=9092626

Family Applications (1)

Application Number Title Priority Date Filing Date
GB383673A Expired GB1418765A (en) 1972-01-28 1973-01-25 Semiconductor devices

Country Status (8)

Country Link
JP (1) JPS523787B2 (en)
AU (1) AU473668B2 (en)
CA (1) CA974662A (en)
DE (1) DE2300597B2 (en)
FR (1) FR2168982B1 (en)
GB (1) GB1418765A (en)
IT (1) IT980938B (en)
NL (1) NL163902C (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5245877A (en) * 1975-09-16 1977-04-11 Trw Inc Transistor
JPS5699867U (en) * 1979-12-27 1981-08-06
JPH07114210B2 (en) * 1990-01-26 1995-12-06 株式会社東芝 Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
CA974662A1 (en)
AU5136573A (en) 1974-08-08
NL163902C (en) 1980-10-15
DE2300597B2 (en) 1977-06-08
AU473668B2 (en) 1976-07-01
FR2168982A1 (en) 1973-09-07
CA974662A (en) 1975-09-16
JPS4885090A (en) 1973-11-12
NL163902B (en) 1980-05-16
DE2300597A1 (en) 1973-08-02
FR2168982B1 (en) 1976-06-11
JPS523787B2 (en) 1977-01-29
NL7300971A (en) 1973-07-31
IT980938B (en) 1974-10-10

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years

Effective date: 19930123