GB1397086A - Semiconductor device having darlington circuit - Google Patents

Semiconductor device having darlington circuit

Info

Publication number
GB1397086A
GB1397086A GB5345172A GB5345172A GB1397086A GB 1397086 A GB1397086 A GB 1397086A GB 5345172 A GB5345172 A GB 5345172A GB 5345172 A GB5345172 A GB 5345172A GB 1397086 A GB1397086 A GB 1397086A
Authority
GB
United Kingdom
Prior art keywords
region
emitter
electrode
base
emitter region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5345172A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1397086A publication Critical patent/GB1397086A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
GB5345172A 1971-11-18 1972-11-20 Semiconductor device having darlington circuit Expired GB1397086A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19988071A 1971-11-18 1971-11-18

Publications (1)

Publication Number Publication Date
GB1397086A true GB1397086A (en) 1975-06-11

Family

ID=22739396

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5345172A Expired GB1397086A (en) 1971-11-18 1972-11-20 Semiconductor device having darlington circuit

Country Status (8)

Country Link
US (1) US3751726A (https=)
JP (1) JPS5118783B2 (https=)
BE (1) BE791487A (https=)
CA (1) CA967289A (https=)
DE (1) DE2255676C2 (https=)
FR (1) FR2160545B1 (https=)
GB (1) GB1397086A (https=)
IT (1) IT968869B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2140204A (en) * 1983-05-16 1984-11-21 Ates Componenti Elettron Power transistor structure with ballast resistor

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7312547A (nl) * 1973-09-12 1975-03-14 Philips Nv Halfgeleiderinrichting, werkwijze ter vervaardiging daarvan en schakeling bevattende de inrichting.
US3836997A (en) * 1973-09-26 1974-09-17 Rca Corp Semiconductor darlington circuit
US3909700A (en) * 1974-01-18 1975-09-30 Gen Electric Monolithic semiconductor rectifier circuit structure
JPS5419828Y2 (https=) * 1974-07-18 1979-07-20
FR2297495A1 (fr) * 1975-01-10 1976-08-06 Radiotechnique Compelec Structure de transistors complementaires et son procede de fabrication
GB1488958A (en) * 1975-03-25 1977-10-19 Texas Instruments Ltd Fast switching darlington circuit
JPS5210662A (en) * 1975-07-16 1977-01-27 Matsushita Electric Ind Co Ltd Semi-conductor circuit
US4097887A (en) * 1976-09-13 1978-06-27 General Electric Company Low resistance, durable gate contact pad for thyristors
DE2718644C2 (de) * 1977-04-27 1979-07-12 Deutsche Itt Industries Gmbh, 7800 Freiburg Monolithisch' integrierte Halbleiterdiodenanordnung und deren Verwendung als Gehörschutzgleichrichter
US4136354A (en) * 1977-09-15 1979-01-23 National Semiconductor Corporation Power transistor including a sense emitter and a reference emitter for enabling power dissipation to be limited to less than a destructive level
US4243952A (en) * 1978-10-30 1981-01-06 Rca Corporation Temperature compensated bias circuit for semiconductor lasers
FR2527008A1 (fr) * 1982-05-14 1983-11-18 Thomson Csf Structure semiconductrice de type mesa associant une diode et un transistor de types transverses en antiparallele
JP2714969B2 (ja) * 1989-01-13 1998-02-16 マツダ株式会社 自動車のサスペンション装置
US5541439A (en) * 1994-11-17 1996-07-30 Xerox Corporation Layout for a high voltage darlington pair

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL260481A (https=) * 1960-02-08
US3210617A (en) * 1961-01-11 1965-10-05 Westinghouse Electric Corp High gain transistor comprising direct connection between base and emitter electrodes
DE1764455C3 (de) * 1968-06-08 1980-02-07 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte Darlington-Transistorschaltung
US3624454A (en) * 1969-09-15 1971-11-30 Gen Motors Corp Mesa-type semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2140204A (en) * 1983-05-16 1984-11-21 Ates Componenti Elettron Power transistor structure with ballast resistor

Also Published As

Publication number Publication date
BE791487A (fr) 1973-03-16
DE2255676A1 (de) 1973-05-24
FR2160545B1 (https=) 1980-08-14
FR2160545A1 (https=) 1973-06-29
DE2255676C2 (de) 1985-04-04
CA967289A (en) 1975-05-06
JPS5118783B2 (https=) 1976-06-12
JPS4863685A (https=) 1973-09-04
IT968869B (it) 1974-03-20
US3751726A (en) 1973-08-07

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee