GB1387018A - Method of manufacturing capacitors in an electronic microstructure - Google Patents

Method of manufacturing capacitors in an electronic microstructure

Info

Publication number
GB1387018A
GB1387018A GB2389072A GB2389072A GB1387018A GB 1387018 A GB1387018 A GB 1387018A GB 2389072 A GB2389072 A GB 2389072A GB 2389072 A GB2389072 A GB 2389072A GB 1387018 A GB1387018 A GB 1387018A
Authority
GB
United Kingdom
Prior art keywords
layer
deposited
silicon
capacitor
oxide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2389072A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1387018A publication Critical patent/GB1387018A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6544—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S204/00—Chemistry: electrical and wave energy
    • Y10S204/03—Auxiliary internally generated electrical energy

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
GB2389072A 1971-05-24 1972-05-22 Method of manufacturing capacitors in an electronic microstructure Expired GB1387018A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7118642A FR2138339B1 (https=) 1971-05-24 1971-05-24

Publications (1)

Publication Number Publication Date
GB1387018A true GB1387018A (en) 1975-03-12

Family

ID=9077495

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2389072A Expired GB1387018A (en) 1971-05-24 1972-05-22 Method of manufacturing capacitors in an electronic microstructure

Country Status (11)

Country Link
US (1) US3839164A (https=)
JP (1) JPS515279B1 (https=)
AU (1) AU4256772A (https=)
BE (1) BE783832A (https=)
CA (1) CA959791A (https=)
CH (1) CH542501A (https=)
FR (1) FR2138339B1 (https=)
GB (1) GB1387018A (https=)
IT (1) IT958931B (https=)
NL (1) NL7206878A (https=)
SE (1) SE369984B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3137708A1 (de) * 1981-09-22 1983-04-07 Siemens AG, 1000 Berlin und 8000 München Integratorschaltung mit einem differenzverstaerker

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5010168A (https=) * 1973-05-24 1975-02-01
FR2509516A1 (fr) * 1981-07-08 1983-01-14 Labo Electronique Physique Procede destine a accroitre la tension de claquage d'un condensateur integre et condensateur ainsi realise
DE3214991A1 (de) * 1982-04-22 1983-11-03 Siemens AG, 1000 Berlin und 8000 München Halbleiterbaustein mit diskretem kondensator
FR2526225B1 (fr) * 1982-04-30 1985-11-08 Radiotechnique Compelec Procede de realisation d'un condensateur integre, et dispositif ainsi obtenu
US6271131B1 (en) * 1998-08-26 2001-08-07 Micron Technology, Inc. Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers
US6284655B1 (en) * 1998-09-03 2001-09-04 Micron Technology, Inc. Method for producing low carbon/oxygen conductive layers
US6239028B1 (en) 1998-09-03 2001-05-29 Micron Technology, Inc. Methods for forming iridium-containing films on substrates
US6323081B1 (en) 1998-09-03 2001-11-27 Micron Technology, Inc. Diffusion barrier layers and methods of forming same
US6329286B1 (en) 1999-04-27 2001-12-11 Micron Technology, Inc. Methods for forming conformal iridium layers on substrates
US6660631B1 (en) 2000-08-31 2003-12-09 Micron Technology, Inc. Devices containing platinum-iridium films and methods of preparing such films and devices
KR100849854B1 (ko) * 2007-02-23 2008-08-01 삼성전자주식회사 반도체 소자 및 그 제조 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2640806A (en) * 1949-06-27 1953-06-02 Kaiser Aluminium Chem Corp Process for polishing aluminum
US2853445A (en) * 1956-04-06 1958-09-23 Aerovox Corp Process of etching aluminum foil for electrolytic capacitor
US3389060A (en) * 1964-06-15 1968-06-18 Gen Motors Corp Method of indium coating metallic articles
US3423821A (en) * 1965-03-18 1969-01-28 Hitachi Ltd Method of producing thin film integrated circuits
US3466719A (en) * 1967-01-11 1969-09-16 Texas Instruments Inc Method of fabricating thin film capacitors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3137708A1 (de) * 1981-09-22 1983-04-07 Siemens AG, 1000 Berlin und 8000 München Integratorschaltung mit einem differenzverstaerker

Also Published As

Publication number Publication date
CH542501A (de) 1973-09-30
DE2225163B2 (de) 1976-11-25
FR2138339A1 (https=) 1973-01-05
DE2225163A1 (de) 1972-12-07
JPS515279B1 (https=) 1976-02-18
AU4256772A (en) 1973-11-29
FR2138339B1 (https=) 1974-08-19
BE783832A (nl) 1972-11-23
SE369984B (https=) 1974-09-23
NL7206878A (https=) 1972-11-28
CA959791A (en) 1974-12-24
US3839164A (en) 1974-10-01
IT958931B (it) 1973-10-30

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee