GB1325099A - Semiconductor charge storage devices - Google Patents

Semiconductor charge storage devices

Info

Publication number
GB1325099A
GB1325099A GB4548771A GB4548771A GB1325099A GB 1325099 A GB1325099 A GB 1325099A GB 4548771 A GB4548771 A GB 4548771A GB 4548771 A GB4548771 A GB 4548771A GB 1325099 A GB1325099 A GB 1325099A
Authority
GB
United Kingdom
Prior art keywords
gates
drain
elements
sources
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4548771A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Western Electric Co Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US7805070A priority Critical
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1325099A publication Critical patent/GB1325099A/en
Application status is Expired legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/108Dynamic random access memory structures
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42396Gate electrodes for field effect devices for charge coupled devices

Abstract

1325099 Semi-conductor devices WESTERN ELECTRIC CO Inc 30 Sept 1971 [5 Oct 1970] 45487/71 Heading H1K A charge storage device comprises, in a single semi-conductor body, a plurality of elements each having a source and a drain and first and second gate electrodes disposed between them, each drain being common to a plurality of sources and each second gate being common to a plurality of sources or connected to the second gate associated with another source. The gates are so disposed that both have to be similarly poled to provide a current path between source and drain. Although in the described arrangements the sources and drains are P-type diffusions in an N-type silicon substrate and insulated gates are used the use of PN or Schottky barrier gates, MOS sources and Schottky barrier drains is also envisaged. The elements may act as photodetectors in an imaging device. In this case with a source floating illumination near it causes it to collectminority carriers which are transferred to the drain by biasing both gates on to give an output indicative of light intensity. When used simply as a memory cell information is fed in by transferring a potential on the drain indicative of a binary 0 or 1 to the source by biasing the gates on. During read-out the drain current is indicative of the stored binary state. A line imaging device is shown in plan in Fig. 2. Sources 11 are floating, first gates 14 connected in groups to one of the outputs of shift register 22, second gates 15 to outputs of shift register 23, and the drain to a load circuit. The elements are scanned by reading pulses applied to gates 14, 15 from the shift registers such that the pulses are coincident on each element in turn. In a modification the elements form an X-Y array, with the drains and the first gates of all elements in a column respectively commoned, as are the second gates of all elements of a row. Read-out of an nÎn array is effected by column and row scan registers each consisting of a pair of shift registers with #n outputs. Output capacitance is minimized by connecting an IGFET in series with each column of elements.
GB4548771A 1970-10-05 1971-09-30 Semiconductor charge storage devices Expired GB1325099A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US7805070A true 1970-10-05 1970-10-05

Publications (1)

Publication Number Publication Date
GB1325099A true GB1325099A (en) 1973-08-01

Family

ID=22141614

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4548771A Expired GB1325099A (en) 1970-10-05 1971-09-30 Semiconductor charge storage devices

Country Status (7)

Country Link
AU (1) AU432367B2 (en)
BE (1) BE773362A (en)
CH (1) CH537631A (en)
DE (1) DE2149325A1 (en)
FR (1) FR2110213A1 (en)
GB (1) GB1325099A (en)
NL (1) NL7113593A (en)

Also Published As

Publication number Publication date
NL7113593A (en) 1972-04-07
AU3398871A (en) 1973-02-22
FR2110213A1 (en) 1972-06-02
BE773362A1 (en)
DE2149325A1 (en) 1972-04-13
AU432367B2 (en) 1973-02-22
CH537631A (en) 1973-05-31
BE773362A (en) 1972-01-17

Similar Documents

Publication Publication Date Title
US3500142A (en) Field effect semiconductor apparatus with memory involving entrapment of charge carriers
US3609479A (en) Semiconductor integrated circuit having mis and bipolar transistor elements
EP0014388B1 (en) Semiconductor memory device
US5915084A (en) Scannable sense amplifier circuit
US6180998B1 (en) DRAM with built-in noise protection
US4250569A (en) Semiconductor memory device
US4044340A (en) Semiconductor memory
US3493786A (en) Unbalanced memory cell
US4527257A (en) Common memory gate non-volatile transistor memory
US6815282B2 (en) Silicon on insulator field effect transistor having shared body contact
US5114870A (en) Method for manufacturing field effect transistors
US3715485A (en) Radiation sensing and signal transfer circuits
US4096584A (en) Low power/high speed static ram
US4486769A (en) Dense nonvolatile electrically-alterable memory device with substrate coupling electrode
US3763480A (en) Digital and analog data handling devices
US4233672A (en) High-speed semiconductor device
US4161039A (en) N-Channel storage FET
US7030436B2 (en) Embedded DRAM gain memory cell having MOS transistor body provided with a bi-polar transistor charge injecting means
US5864242A (en) One-transistor adaptable analog storage element and array
EP2216817B1 (en) Back side illuminated image sensor
US3836894A (en) Mnos/sos random access memory
US5043946A (en) Semiconductor memory device
US4485433A (en) Integrated circuit dual polarity high voltage multiplier for extended operating temperature range
US3982138A (en) High speed-low cost, clock controlled CMOS logic implementation
US3758794A (en) Charge coupled shift registers

Legal Events

Date Code Title Description
CSNS Application of which complete specification have been accepted and published, but patent is not sealed