GB1305236A - - Google Patents
Info
- Publication number
- GB1305236A GB1305236A GB2911470A GB2911470A GB1305236A GB 1305236 A GB1305236 A GB 1305236A GB 2911470 A GB2911470 A GB 2911470A GB 2911470 A GB2911470 A GB 2911470A GB 1305236 A GB1305236 A GB 1305236A
- Authority
- GB
- United Kingdom
- Prior art keywords
- chromium
- tracks
- nickel
- silver
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 12
- 239000011651 chromium Substances 0.000 abstract 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 10
- 229910052804 chromium Inorganic materials 0.000 abstract 10
- 229910052759 nickel Inorganic materials 0.000 abstract 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 5
- 229910052709 silver Inorganic materials 0.000 abstract 5
- 239000004332 silver Substances 0.000 abstract 5
- 239000010410 layer Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009713 electroplating Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 230000007613 environmental effect Effects 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 229910021339 platinum silicide Inorganic materials 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
- 239000003870 refractory metal Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Conductive Materials (AREA)
- Electroplating Methods And Accessories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US83783669A | 1969-06-30 | 1969-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1305236A true GB1305236A (enrdf_load_stackoverflow) | 1973-01-31 |
Family
ID=25275578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2911470A Expired GB1305236A (enrdf_load_stackoverflow) | 1969-06-30 | 1970-06-16 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS4936517B1 (enrdf_load_stackoverflow) |
| AU (1) | AU1678170A (enrdf_load_stackoverflow) |
| CA (1) | CA945690A (enrdf_load_stackoverflow) |
| DE (1) | DE2032317A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2048038B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1305236A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115966472A (zh) * | 2022-12-21 | 2023-04-14 | 福建闽航电子有限公司 | 一种cbcc型陶瓷外壳封装体的制造方法及陶瓷外壳封装体 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7241649B2 (ja) * | 2019-09-06 | 2023-03-17 | 株式会社東芝 | 半導体装置およびその製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1540581A (fr) * | 1966-12-30 | 1968-09-27 | Texas Instruments Inc | Circuit intégré à contacts ohmiques et à interconnexions à niveaux multiples |
-
1970
- 1970-06-02 FR FR7020073A patent/FR2048038B1/fr not_active Expired
- 1970-06-12 CA CA085,321A patent/CA945690A/en not_active Expired
- 1970-06-16 GB GB2911470A patent/GB1305236A/en not_active Expired
- 1970-06-16 JP JP45051619A patent/JPS4936517B1/ja active Pending
- 1970-06-24 AU AU16781/70A patent/AU1678170A/en not_active Expired
- 1970-06-30 DE DE19702032317 patent/DE2032317A1/de not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115966472A (zh) * | 2022-12-21 | 2023-04-14 | 福建闽航电子有限公司 | 一种cbcc型陶瓷外壳封装体的制造方法及陶瓷外壳封装体 |
Also Published As
| Publication number | Publication date |
|---|---|
| AU1678170A (en) | 1972-01-06 |
| FR2048038B1 (enrdf_load_stackoverflow) | 1974-05-03 |
| CA945690A (en) | 1974-04-16 |
| DE2032317A1 (de) | 1971-01-07 |
| FR2048038A1 (enrdf_load_stackoverflow) | 1971-03-19 |
| JPS4936517B1 (enrdf_load_stackoverflow) | 1974-10-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3844831A (en) | Forming a compact multilevel interconnection metallurgy system for semi-conductor devices | |
| US4592802A (en) | Method of fabrication of aluminum contacts through a thick insulating layer in an integrated circuit | |
| US3657029A (en) | Platinum thin-film metallization method | |
| GB1435320A (en) | Methods of manufacturing semi-conductor devices | |
| US4319264A (en) | Nickel-gold-nickel conductors for solid state devices | |
| GB1530237A (en) | Method of fabricating metal semiconductor interfaces | |
| GB1418278A (en) | Integrated circuit devices | |
| US3653999A (en) | Method of forming beam leads on semiconductor devices and integrated circuits | |
| GB1193868A (en) | Ohmic Contacts for Semiconductor Devices | |
| US4718977A (en) | Process for forming semiconductor device having multi-thickness metallization | |
| GB1257408A (enrdf_load_stackoverflow) | ||
| US3689332A (en) | Method of producing semiconductor circuits with conductance paths | |
| GB1243247A (en) | Ohmic contact and electrical interconnection system for electronic devices | |
| GB1305236A (enrdf_load_stackoverflow) | ||
| KR890005845A (ko) | 배리어층을 가지고 있는 알루미늄 합금 반도체 장치 및 그 제조방법 | |
| GB1241574A (en) | A method of plating conductive metals on film-forming materials | |
| US3442012A (en) | Method of forming a flip-chip integrated circuit | |
| US4308592A (en) | Patterned kill of magnetoresistive layer in bubble domain chip | |
| US3537925A (en) | Method of forming a fine line apertured film | |
| GB1269130A (en) | Improvements relating to ohmic contacts for semiconductor devices | |
| GB1232126A (enrdf_load_stackoverflow) | ||
| JPS61187369A (ja) | 薄膜トランジスタの製造方法 | |
| GB1294516A (en) | Improvements in or relating to the fabrication of semiconductor devices | |
| JPH0418760A (ja) | 半導体装置 | |
| JPS6326485B2 (enrdf_load_stackoverflow) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |