GB1304593A - - Google Patents
Info
- Publication number
- GB1304593A GB1304593A GB1962970A GB1962970A GB1304593A GB 1304593 A GB1304593 A GB 1304593A GB 1962970 A GB1962970 A GB 1962970A GB 1962970 A GB1962970 A GB 1962970A GB 1304593 A GB1304593 A GB 1304593A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cadmium
- indium
- zinc
- gallium
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/10—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances sulfides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/50—Alloying conductive materials with semiconductor bodies
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/02—Contacts, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/064—Gp II-VI compounds
Landscapes
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US82489869A | 1969-04-25 | 1969-04-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1304593A true GB1304593A (https=) | 1973-01-24 |
Family
ID=25242598
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1962970A Expired GB1304593A (https=) | 1969-04-25 | 1970-04-23 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3614551A (https=) |
| AT (1) | AT299344B (https=) |
| BE (1) | BE749552A (https=) |
| CH (1) | CH506228A (https=) |
| FR (1) | FR2040212B1 (https=) |
| GB (1) | GB1304593A (https=) |
| IL (1) | IL34166A (https=) |
| NL (1) | NL7005802A (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3670220A (en) * | 1971-02-26 | 1972-06-13 | Zenith Radio Corp | Pn junctions in znse, zns, or zns/znse and semiconductor devices comprising such junctions |
| US3786315A (en) * | 1972-04-03 | 1974-01-15 | Intel Corp | Electroluminescent device |
| US4123295A (en) * | 1977-01-14 | 1978-10-31 | California Institute Of Technology | Mercury chalcogenide contact for semiconductor devices |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL251613A (https=) * | 1960-05-13 | |||
| NL6611537A (https=) * | 1966-08-17 | 1968-02-19 | ||
| US3515954A (en) * | 1967-05-05 | 1970-06-02 | Hitachi Ltd | Ohmic contact to semiconductor |
-
1969
- 1969-04-25 US US824898A patent/US3614551A/en not_active Expired - Lifetime
-
1970
- 1970-03-25 IL IL34166A patent/IL34166A/xx unknown
- 1970-04-22 CH CH602370A patent/CH506228A/de not_active IP Right Cessation
- 1970-04-22 NL NL7005802A patent/NL7005802A/xx unknown
- 1970-04-22 FR FR707014546A patent/FR2040212B1/fr not_active Expired
- 1970-04-23 GB GB1962970A patent/GB1304593A/en not_active Expired
- 1970-04-23 AT AT372570A patent/AT299344B/de not_active IP Right Cessation
- 1970-04-24 BE BE749552D patent/BE749552A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE2019162A1 (de) | 1970-11-05 |
| BE749552A (fr) | 1970-10-01 |
| FR2040212B1 (https=) | 1974-07-12 |
| IL34166A0 (en) | 1970-05-21 |
| IL34166A (en) | 1973-03-30 |
| NL7005802A (https=) | 1970-10-27 |
| CH506228A (de) | 1971-04-15 |
| US3614551A (en) | 1971-10-19 |
| AT299344B (de) | 1972-06-12 |
| FR2040212A1 (https=) | 1971-01-22 |
| DE2019162B2 (de) | 1972-08-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Starkiewicz et al. | Injection electroluminescence at pn junctions in zinc-doped gallium phosphide | |
| GB1304593A (https=) | ||
| JPS5439573A (en) | Compound semiconductor device | |
| US3780427A (en) | Ohmic contact to zinc sulfide devices | |
| GB960451A (en) | Improved compound semiconductor material and method of making same | |
| Ozsan et al. | Electroluminescence in zinc sulpho-selenide and in zinc sulphide | |
| Dekker | The possible occurrence of exciton-enhanced secondary emission | |
| JPS5366384A (en) | Thyristor | |
| ES344100A1 (es) | Dispositivo semiconductor. | |
| GB965355A (en) | Zinc-cadmium electroluminescent phosphor and method | |
| GB1323454A (en) | Electroluminescent device | |
| JPS52115787A (en) | Luminous compositions | |
| JPS5313352A (en) | Magic eye and its manufacture | |
| JPS55107281A (en) | Microregion luminous diode | |
| JPS5670676A (en) | Luminous diode | |
| Kennedy et al. | Electroluminescence in polycrystalline ZnTe | |
| USD213027S (en) | Cover for fire alarm or similar article | |
| Bodi | A flow synthesis of gallium phosphide and some properties of gallium phosphide powder layers | |
| GB718064A (en) | Improvements relating to semi-conductors | |
| JPS5232677A (en) | Schottky barrier diode | |
| JPS5472669A (en) | Impurity diffusing method of closing tube type | |
| Zotova et al. | Parameters of the luminescence emitted by epitaxial films and p-n structures based on In sub 1 sub- sub x Ga sub x As(0< x< 0. 23) | |
| JPS52147088A (en) | Light emitting device | |
| JPS52100886A (en) | Emission indicator and its production | |
| JPS5789275A (en) | Manufacture of semiconductor light emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |