GB1303660A - - Google Patents
Info
- Publication number
- GB1303660A GB1303660A GB1303660DA GB1303660A GB 1303660 A GB1303660 A GB 1303660A GB 1303660D A GB1303660D A GB 1303660DA GB 1303660 A GB1303660 A GB 1303660A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junction
- cathode
- edge
- breakdown voltage
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB5545369 | 1969-11-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1303660A true GB1303660A (fi) | 1973-01-17 |
Family
ID=10473954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1303660D Expired GB1303660A (fi) | 1969-11-12 | 1969-11-12 |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1303660A (fi) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2902746A1 (de) * | 1978-01-27 | 1979-08-02 | Philips Nv | Halbleiteranordnung und verfahren zu deren herstellung sowie aufnahmevorrichtung und wiedergabevorrichtung mit einer derartigen halbleiteranordnung |
DE3025945A1 (de) * | 1979-07-13 | 1981-01-29 | Philips Nv | Halbleiteranordnung und verfahren zu deren herstellung, sowie aufnahmeroehre und wiedergabevorrichtung mit einer derartigen halbleiteranordnung |
US4871911A (en) * | 1985-02-14 | 1989-10-03 | U.S. Philips Corporation | Electron beam apparatus comprising a semiconductor electron emitter |
GB2347785A (en) * | 1999-03-06 | 2000-09-13 | Smiths Industries Plc | Electron-emitting devices |
EP0890184B1 (en) * | 1996-03-27 | 2009-07-08 | Cree, Inc. | A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR LAYER OF SiC |
-
1969
- 1969-11-12 GB GB1303660D patent/GB1303660A/en not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2902746A1 (de) * | 1978-01-27 | 1979-08-02 | Philips Nv | Halbleiteranordnung und verfahren zu deren herstellung sowie aufnahmevorrichtung und wiedergabevorrichtung mit einer derartigen halbleiteranordnung |
DE3025945A1 (de) * | 1979-07-13 | 1981-01-29 | Philips Nv | Halbleiteranordnung und verfahren zu deren herstellung, sowie aufnahmeroehre und wiedergabevorrichtung mit einer derartigen halbleiteranordnung |
US4871911A (en) * | 1985-02-14 | 1989-10-03 | U.S. Philips Corporation | Electron beam apparatus comprising a semiconductor electron emitter |
EP0890184B1 (en) * | 1996-03-27 | 2009-07-08 | Cree, Inc. | A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR LAYER OF SiC |
GB2347785A (en) * | 1999-03-06 | 2000-09-13 | Smiths Industries Plc | Electron-emitting devices |
GB2347785B (en) * | 1999-03-06 | 2003-12-17 | Smiths Industries Plc | Electron-emitting devices |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees |