GB1297315A - - Google Patents
Info
- Publication number
- GB1297315A GB1297315A GB1297315DA GB1297315A GB 1297315 A GB1297315 A GB 1297315A GB 1297315D A GB1297315D A GB 1297315DA GB 1297315 A GB1297315 A GB 1297315A
- Authority
- GB
- United Kingdom
- Prior art keywords
- melt
- substance
- substrate
- layer
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000155 melt Substances 0.000 abstract 14
- 239000000126 substance Substances 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 7
- 238000000034 method Methods 0.000 abstract 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 238000009937 brining Methods 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- 239000012047 saturated solution Substances 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/061—Tipping system, e.g. by rotation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691946049 DE1946049C3 (de) | 1969-09-11 | 1969-09-11 | Verfahren und Vorrichtung zur Flüssigphasenepitaxie |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1297315A true GB1297315A (enrdf_load_stackoverflow) | 1972-11-22 |
Family
ID=5745230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1297315D Expired GB1297315A (enrdf_load_stackoverflow) | 1969-09-11 | 1970-09-09 |
Country Status (4)
Country | Link |
---|---|
JP (2) | JPS5010551B1 (enrdf_load_stackoverflow) |
DE (1) | DE1946049C3 (enrdf_load_stackoverflow) |
FR (1) | FR2061207A5 (enrdf_load_stackoverflow) |
GB (1) | GB1297315A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3741825A (en) * | 1971-07-08 | 1973-06-26 | Rca Corp | Method of depositing an epitaxial semiconductor layer from the liquidphase |
BE788374A (fr) * | 1971-12-08 | 1973-01-02 | Rca Corp | Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat |
-
1969
- 1969-09-11 DE DE19691946049 patent/DE1946049C3/de not_active Expired
-
1970
- 1970-09-09 FR FR7032799A patent/FR2061207A5/fr not_active Expired
- 1970-09-09 GB GB1297315D patent/GB1297315A/en not_active Expired
- 1970-09-11 JP JP7993070A patent/JPS5010551B1/ja active Pending
-
1974
- 1974-01-04 JP JP454874A patent/JPS5228107B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE1946049B2 (de) | 1978-06-08 |
FR2061207A5 (enrdf_load_stackoverflow) | 1971-06-18 |
DE1946049A1 (de) | 1971-03-18 |
DE1946049C3 (de) | 1979-02-08 |
JPS5010551B1 (enrdf_load_stackoverflow) | 1975-04-22 |
JPS5228107B1 (enrdf_load_stackoverflow) | 1977-07-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US2739088A (en) | Process for controlling solute segregation by zone-melting | |
GB1283793A (en) | Depositing successive epitaxial semiconductive layers from the liquid phase | |
CA932626A (en) | Composite method for growth of iib-via compounds on substrates, and process for making composition for the compounds | |
ES409385A1 (es) | Metodo para la obtencion de un dispositivo semiconductor. | |
GB1371537A (en) | Method of depositing an epitaxial semi-conductor layer from the liquid phase | |
GB1414254A (en) | Epitaxial growth of semiconductor material from the liquid phase | |
GB1172833A (en) | Concentration Process for Beer and Vinegar. | |
GB1277787A (en) | Method for growing tin-doped n-type epitaxial gallium arsenide from the liquid state | |
GB1297315A (enrdf_load_stackoverflow) | ||
GB1433161A (en) | Epitaxially grown layers | |
US3650822A (en) | Method of producing epitactic semiconductor layers on foreign substrates | |
JPS5236468A (en) | Shallow diffusion method | |
GB1468106A (en) | Method and apparatus for crystal growth | |
SU198882A1 (ru) | Способ удалени непригодного эмалевого покрыти с поверхности металлических изделий | |
EP0056737A3 (en) | Method of manufacturing a semiconductor device using molecular beam epitaxy | |
JPS5393788A (en) | Production of semiconductor device | |
SU146049A1 (ru) | Способ создани электронно-дырочных переходов в дендритах полупроводникового антимонида инди | |
FR2145829A5 (en) | Semiconductor cpd epitaxial growth - from soln in esp one metal of cpd | |
FR2137160A1 (en) | Monocrystalline semiconductor substrate prodn - with low specific resistance | |
GB1493825A (en) | Semiconductors | |
JPS5650520A (en) | Processing method of semiconductor substrate | |
JPS5231665A (en) | Growing method of semiconductor crystal | |
GB1248325A (en) | Process and apparatus for the expansion of expandable beads | |
JPS5717496A (en) | Liquid phase growing method for single crystal of compound semiconductor | |
GB1194501A (en) | Process for Preparing Substantially Pure Glycolide |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees |