GB1297315A - - Google Patents

Info

Publication number
GB1297315A
GB1297315A GB1297315DA GB1297315A GB 1297315 A GB1297315 A GB 1297315A GB 1297315D A GB1297315D A GB 1297315DA GB 1297315 A GB1297315 A GB 1297315A
Authority
GB
United Kingdom
Prior art keywords
melt
substance
substrate
layer
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1297315A publication Critical patent/GB1297315A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/06Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061Tipping system, e.g. by rotation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB1297315D 1969-09-11 1970-09-09 Expired GB1297315A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691946049 DE1946049C3 (de) 1969-09-11 1969-09-11 Verfahren und Vorrichtung zur Flüssigphasenepitaxie

Publications (1)

Publication Number Publication Date
GB1297315A true GB1297315A (enrdf_load_stackoverflow) 1972-11-22

Family

ID=5745230

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1297315D Expired GB1297315A (enrdf_load_stackoverflow) 1969-09-11 1970-09-09

Country Status (4)

Country Link
JP (2) JPS5010551B1 (enrdf_load_stackoverflow)
DE (1) DE1946049C3 (enrdf_load_stackoverflow)
FR (1) FR2061207A5 (enrdf_load_stackoverflow)
GB (1) GB1297315A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3741825A (en) * 1971-07-08 1973-06-26 Rca Corp Method of depositing an epitaxial semiconductor layer from the liquidphase
BE788374A (fr) * 1971-12-08 1973-01-02 Rca Corp Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat

Also Published As

Publication number Publication date
DE1946049B2 (de) 1978-06-08
FR2061207A5 (enrdf_load_stackoverflow) 1971-06-18
DE1946049A1 (de) 1971-03-18
DE1946049C3 (de) 1979-02-08
JPS5010551B1 (enrdf_load_stackoverflow) 1975-04-22
JPS5228107B1 (enrdf_load_stackoverflow) 1977-07-25

Similar Documents

Publication Publication Date Title
US2739088A (en) Process for controlling solute segregation by zone-melting
GB1283793A (en) Depositing successive epitaxial semiconductive layers from the liquid phase
CA932626A (en) Composite method for growth of iib-via compounds on substrates, and process for making composition for the compounds
ES409385A1 (es) Metodo para la obtencion de un dispositivo semiconductor.
GB1371537A (en) Method of depositing an epitaxial semi-conductor layer from the liquid phase
GB1414254A (en) Epitaxial growth of semiconductor material from the liquid phase
GB1172833A (en) Concentration Process for Beer and Vinegar.
GB1277787A (en) Method for growing tin-doped n-type epitaxial gallium arsenide from the liquid state
GB1297315A (enrdf_load_stackoverflow)
GB1433161A (en) Epitaxially grown layers
US3650822A (en) Method of producing epitactic semiconductor layers on foreign substrates
JPS5236468A (en) Shallow diffusion method
GB1468106A (en) Method and apparatus for crystal growth
SU198882A1 (ru) Способ удалени непригодного эмалевого покрыти с поверхности металлических изделий
EP0056737A3 (en) Method of manufacturing a semiconductor device using molecular beam epitaxy
JPS5393788A (en) Production of semiconductor device
SU146049A1 (ru) Способ создани электронно-дырочных переходов в дендритах полупроводникового антимонида инди
FR2145829A5 (en) Semiconductor cpd epitaxial growth - from soln in esp one metal of cpd
FR2137160A1 (en) Monocrystalline semiconductor substrate prodn - with low specific resistance
GB1493825A (en) Semiconductors
JPS5650520A (en) Processing method of semiconductor substrate
JPS5231665A (en) Growing method of semiconductor crystal
GB1248325A (en) Process and apparatus for the expansion of expandable beads
JPS5717496A (en) Liquid phase growing method for single crystal of compound semiconductor
GB1194501A (en) Process for Preparing Substantially Pure Glycolide

Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees