GB1283484A - Light activated semiconductor device - Google Patents

Light activated semiconductor device

Info

Publication number
GB1283484A
GB1283484A GB28563/70A GB2856370A GB1283484A GB 1283484 A GB1283484 A GB 1283484A GB 28563/70 A GB28563/70 A GB 28563/70A GB 2856370 A GB2856370 A GB 2856370A GB 1283484 A GB1283484 A GB 1283484A
Authority
GB
United Kingdom
Prior art keywords
light
june
light activated
semiconductor device
pnpn switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB28563/70A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB1283484A publication Critical patent/GB1283484A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/2804—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers
    • G02B6/2817—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using reflective elements to split or combine optical signals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/138—Containers comprising a conductive base serving as an interconnection having another interconnection being formed by a cover plate parallel to the conductive base, e.g. sandwich type

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
GB28563/70A 1969-06-20 1970-06-12 Light activated semiconductor device Expired GB1283484A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US83499769A 1969-06-20 1969-06-20

Publications (1)

Publication Number Publication Date
GB1283484A true GB1283484A (en) 1972-07-26

Family

ID=25268305

Family Applications (1)

Application Number Title Priority Date Filing Date
GB28563/70A Expired GB1283484A (en) 1969-06-20 1970-06-12 Light activated semiconductor device

Country Status (4)

Country Link
US (1) US3590344A (https=)
BE (1) BE752218A (https=)
FR (1) FR2046976B1 (https=)
GB (1) GB1283484A (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3796881A (en) * 1972-04-28 1974-03-12 Westinghouse Electric Corp Encapsulated light activated semiconductor device
US3832732A (en) * 1973-01-11 1974-08-27 Westinghouse Electric Corp Light-activated lateral thyristor and ac switch
JPS5071261A (https=) * 1973-10-25 1975-06-13
FR2286507A1 (fr) * 1974-09-27 1976-04-23 Sercel Rech Const Elect Dispositif semi-conducteur emetteur ou recepteur de lumiere avec fibre optique, notamment pour telemetrie
JPS5758075B2 (https=) * 1974-10-19 1982-12-08 Sony Corp
US4167746A (en) * 1975-03-03 1979-09-11 General Electric Company Radiation triggered thyristor with light focussing guide
IN143215B (https=) * 1975-03-25 1977-10-15 Westinghouse Electric Corp
JPS583386B2 (ja) * 1975-10-11 1983-01-21 株式会社日立製作所 ソウホウコウセイホトサイリスタ
US4144541A (en) * 1977-01-27 1979-03-13 Electric Power Research Institute, Inc. Light-activated semiconductor device package unit
JPS52114672U (https=) * 1977-02-28 1977-08-31
US4131905A (en) * 1977-05-26 1978-12-26 Electric Power Research Institute, Inc. Light-triggered thyristor and package therefore
US4207587A (en) * 1977-05-26 1980-06-10 Electric Power Research Institute, Inc. Package for light-triggered thyristor
US4148052A (en) * 1977-10-12 1979-04-03 Westinghouse Electric Corp. Radiant energy sensor
US4301462A (en) * 1978-08-03 1981-11-17 Westinghouse Electric Corp. Light activated silicon switch with etched channel in cathode base and anode emitter communicating with cladded optical fiber
US4257058A (en) * 1979-07-05 1981-03-17 Electric Power Research Institute, Inc. Package for radiation triggered semiconductor device and method
JPS5986395A (ja) * 1982-11-09 1984-05-18 Toshiba Corp 光制御装置
US4754130A (en) * 1986-10-31 1988-06-28 Stanford University Method and means for detecting optically transmitted signals and establishing optical interference pattern between electrodes
TW527676B (en) * 2001-01-19 2003-04-11 Matsushita Electric Industrial Co Ltd Photo-semiconductor module and method for manufacturing
US7057214B2 (en) * 2003-07-01 2006-06-06 Optiswitch Technology Corporation Light-activated semiconductor switches

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3317746A (en) * 1963-12-10 1967-05-02 Electronic Controls Corp Semiconductor device and circuit
DE1514577B2 (de) * 1965-09-21 1973-06-20 Semikron Gesellschaft fur Gleich richterbau und Elektronik mbH, 8500 Nurn berg Verfahren zum herstellen einer mehrzahl von thyristoren mit legierter kathodenzone
US3422323A (en) * 1966-03-18 1969-01-14 Mallory & Co Inc P R Five-layer light-actuated semiconductor device having bevelled sides
US3444381A (en) * 1967-05-22 1969-05-13 Hughes Aircraft Co Silicon photodiode having folded electrode to increase light path length in body of diode
US3487223A (en) * 1968-07-10 1969-12-30 Us Air Force Multiple internal reflection structure in a silicon detector which is obtained by sandblasting

Also Published As

Publication number Publication date
BE752218A (fr) 1970-12-21
US3590344A (en) 1971-06-29
FR2046976B1 (https=) 1973-01-12
FR2046976A1 (https=) 1971-03-12

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years