GB1274362A - Method of diffusing impurity elements into a semiconductor - Google Patents

Method of diffusing impurity elements into a semiconductor

Info

Publication number
GB1274362A
GB1274362A GB02580/70A GB1258070A GB1274362A GB 1274362 A GB1274362 A GB 1274362A GB 02580/70 A GB02580/70 A GB 02580/70A GB 1258070 A GB1258070 A GB 1258070A GB 1274362 A GB1274362 A GB 1274362A
Authority
GB
United Kingdom
Prior art keywords
substrate
impurity
semiconductor
diffused
dioxane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB02580/70A
Other languages
English (en)
Inventor
Rikusei Kohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of GB1274362A publication Critical patent/GB1274362A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Formation Of Insulating Films (AREA)
GB02580/70A 1969-03-20 1970-03-16 Method of diffusing impurity elements into a semiconductor Expired GB1274362A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP44022525A JPS4822536B1 (https=) 1969-03-20 1969-03-20

Publications (1)

Publication Number Publication Date
GB1274362A true GB1274362A (en) 1972-05-17

Family

ID=12085187

Family Applications (1)

Application Number Title Priority Date Filing Date
GB02580/70A Expired GB1274362A (en) 1969-03-20 1970-03-16 Method of diffusing impurity elements into a semiconductor

Country Status (4)

Country Link
JP (1) JPS4822536B1 (https=)
DE (1) DE2012927C3 (https=)
FR (1) FR2041088A1 (https=)
GB (1) GB1274362A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009140116A3 (en) * 2008-05-13 2010-10-21 Georgia Tech Research Corporation Solar cell spin-on based process for simultaneous diffusion and passivation

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2007752B2 (de) * 1970-02-19 1978-07-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von dotiertem Halbleitermaterial
JPS52145777U (https=) * 1976-04-28 1977-11-04

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009140116A3 (en) * 2008-05-13 2010-10-21 Georgia Tech Research Corporation Solar cell spin-on based process for simultaneous diffusion and passivation

Also Published As

Publication number Publication date
JPS4822536B1 (https=) 1973-07-06
FR2041088A1 (https=) 1971-01-29
DE2012927B2 (de) 1972-04-20
DE2012927C3 (de) 1975-05-07
DE2012927A1 (de) 1970-09-24

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee