GB1269634A - Improvements in or relating to radiation detectors - Google Patents

Improvements in or relating to radiation detectors

Info

Publication number
GB1269634A
GB1269634A GB2802768A GB2802768A GB1269634A GB 1269634 A GB1269634 A GB 1269634A GB 2802768 A GB2802768 A GB 2802768A GB 2802768 A GB2802768 A GB 2802768A GB 1269634 A GB1269634 A GB 1269634A
Authority
GB
United Kingdom
Prior art keywords
ribs
wafer
face
type
slots
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2802768A
Inventor
James Leonard Wankling
Ronald Ellis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Development Corp UK
Original Assignee
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Development Corp UK filed Critical National Research Development Corp UK
Priority to GB2802768A priority Critical patent/GB1269634A/en
Priority to DE19691929569 priority patent/DE1929569A1/en
Priority to NL6908993A priority patent/NL6908993A/xx
Publication of GB1269634A publication Critical patent/GB1269634A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/117—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H01L31/1175—Li compensated PIN gamma-ray detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor

Abstract

1,269,634. Semi-conductor devices. NATIONAL RESEARCH DEVELOPMENT CORP. 10 June, 1969 [12 June, 1968], No. 28027/68. Heading H1K. A radiation detector comprises a slab of semi-conductor material having a PIN structure and having slots dividing opposite major faces into parallel ribs, the ribs on one face extending transverse to those on the other face, each slot extending to such a depth that it intersects the junction between the respective P- or N- type region and the I-type region. As shown, Fig. 1, a wafer 1 of P-type Ge doped with Ga has a series of parallel slots 5 sawn in one face to form ribs 3 and is etched and ultrasonically cleaned to remove damaged material. A lithium-in-oil suspension is applied to the unslotted face of the wafer which is then heated to diffuse-in the lithium to form an N- type region with an N+ -type surface layer. The PN junction formed is reverse biased to cause the lithium ions to drift-in to form an I- type region 6 between the P- and N-type regions. Slots 4 extending at right angles to the slots 5 are then sawn in the upper face of the wafer to form ribs 2. The wafer is then etched and quenched in an aqueous solution of CaCl 2 , these steps being performed in such a manner that both sides of the wafer are exposed to the fluids. This may be achieved by using a stoppered funnel, Fig. 3 (not shown), or by supporting and rotating the wafer in the etch by means of a nylon clamp engaging the edges of the wafer. The wafer is then given a known clean-up drift. The ribs 2 and 3 are contacted by applying an In-Ga eutectic to the surfaces and pressing on to each face a flexible insulating base, e.g. of fibreglass or plastics material, carrying goldplated contact strips tinned with indium. The In-Ga euteetic alloys to the P-type ribs 3 to provide a low-resistance P-type surface layer. The process steps are controlled so that the sets of grooves 4, 5 intersect the NI and PI junctions respectively, to form an array of PIN diodes with co-ordinate connections. A gamma-ray camera. Fig. 2 (not shown), comprises a PIN diode array mounted with its lower face ribs (3) in thermal contact with a. plate (13) cooled by liquid nitrogen. A bias supply is connected via resistors. (8, 9) to the ribs (2, 3) so that the diodes are reverse biased. A gamma-ray source is viewed through a parallel hole collimator (7) the holes of which are aligned with the diodes of the array. Incidence of a gamma ray on a diode produces pulses at those electrodes. connected to the two ribs the intersection of which defines the diode. These output pulses are amplified and applied to a logic circuit which provides an output indicating the position of the point of the array on which the gamma ray impinged.
GB2802768A 1968-06-12 1968-06-12 Improvements in or relating to radiation detectors Expired GB1269634A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB2802768A GB1269634A (en) 1968-06-12 1968-06-12 Improvements in or relating to radiation detectors
DE19691929569 DE1929569A1 (en) 1968-06-12 1969-06-11 Radiation detector, gamma radiation camera equipped with it, and method for manufacturing radiation detectors
NL6908993A NL6908993A (en) 1968-06-12 1969-06-12

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2802768A GB1269634A (en) 1968-06-12 1968-06-12 Improvements in or relating to radiation detectors

Publications (1)

Publication Number Publication Date
GB1269634A true GB1269634A (en) 1972-04-06

Family

ID=10269087

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2802768A Expired GB1269634A (en) 1968-06-12 1968-06-12 Improvements in or relating to radiation detectors

Country Status (3)

Country Link
DE (1) DE1929569A1 (en)
GB (1) GB1269634A (en)
NL (1) NL6908993A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005057668A1 (en) * 2003-12-10 2005-06-23 Dr. Johannes Heidenhain Gmbh Scanning head for optical positional measuring system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005057668A1 (en) * 2003-12-10 2005-06-23 Dr. Johannes Heidenhain Gmbh Scanning head for optical positional measuring system
JP2007514151A (en) * 2003-12-10 2007-05-31 ドクトル・ヨハネス・ハイデンハイン・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング Scan head for optical position measurement system
US7719075B2 (en) 2003-12-10 2010-05-18 Dr. Johannes Heidenhain Gmbh Scanning head for optical position-measuring systems

Also Published As

Publication number Publication date
DE1929569A1 (en) 1969-12-18
NL6908993A (en) 1969-12-16

Similar Documents

Publication Publication Date Title
US3623026A (en) Mis device and method for storing information and providing an optical readout
GB923513A (en) Improvements in semiconductor devices
SE8403852D0 (en) Semiconductor overvoltage attenuators with a power output voltage that can be accurately predetermined
GB908690A (en) Semiconductor device
US3691389A (en) Radiation detector comprising semi-conductor body incorporating a two-dimensional array of p-i-n-devices
GB1140139A (en) Process for the production of the semiconductor element and a semiconductor element produced by this process
GB1266398A (en)
GB1114578A (en) Beam-of-light transistor
GB1269634A (en) Improvements in or relating to radiation detectors
GB1173919A (en) Semiconductor Device with a pn-Junction
GB1062725A (en) Improvements in or relating to lasers
GB1242006A (en) Improvements in and relating to semiconductor radiation-detectors
GB1466325A (en) Infra-red detector
GB742238A (en) Improvements in barrier layer cells
US2907969A (en) Photoelectric device
Gel'mont et al. Impurity states in zero gap semiconductors(Quasi-discrete acceptor states in zero forbidden gap n-type semiconductors, showing noncompensation at low temperatures)
GB992963A (en) Semiconductor devices
JPS5613764A (en) Bipolar transistor
GB994213A (en) Devices for converting solar radiation into electrical energy
GB925520A (en) Semi-conductor circuit and method of making same
US3612869A (en) Large volume planar pair germanium (lithium) detector
US3085310A (en) Semiconductor device
US3217166A (en) Photosensitive semiconductor junction device having a two-dimensional response
US3327525A (en) Scribed and notched pn-junction transducers
GB1306970A (en) Semiconductor circuit