GB1216001A - Electronic material - Google Patents
Electronic materialInfo
- Publication number
- GB1216001A GB1216001A GB2531/68A GB253168A GB1216001A GB 1216001 A GB1216001 A GB 1216001A GB 2531/68 A GB2531/68 A GB 2531/68A GB 253168 A GB253168 A GB 253168A GB 1216001 A GB1216001 A GB 1216001A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layers
- semi
- materials
- metal
- jan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012776 electronic material Substances 0.000 title 1
- 239000000463 material Substances 0.000 abstract 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 4
- 229910052751 metal Inorganic materials 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 229910052742 iron Inorganic materials 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 229910052770 Uranium Inorganic materials 0.000 abstract 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052792 caesium Inorganic materials 0.000 abstract 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000011888 foil Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- BBKFSSMUWOMYPI-UHFFFAOYSA-N gold palladium Chemical compound [Pd].[Au] BBKFSSMUWOMYPI-UHFFFAOYSA-N 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 238000007737 ion beam deposition Methods 0.000 abstract 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 abstract 1
- 150000001247 metal acetylides Chemical class 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 239000010955 niobium Substances 0.000 abstract 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 238000005096 rolling process Methods 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
- DNYWZCXLKNTFFI-UHFFFAOYSA-N uranium Chemical compound [U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U] DNYWZCXLKNTFFI-UHFFFAOYSA-N 0.000 abstract 1
- 229910052720 vanadium Inorganic materials 0.000 abstract 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Photovoltaic Devices (AREA)
Abstract
1,216,001. Semi-conductor devices. R. DAHLBERG. 17 Jan., 1968 [17 Jan., 1967], No. 2513/68. Heading H1K. A material primarily for use in thermoelectric applications consists of conductive layers alternately of positive and negative thermoelectric power each thinner than the mean free path of electrical charge carriers in the layer. The layers may be of metal, metallically conductive oxides, or semi-conductors. Suitable conductive materials are the oxides, nitrides and carbides of metals from the group chromium, titanium, iron, indium, manganese, niobium, vanadium, tungsten, molybdenum, uranium, tantalum, zirconium, boron; borides and silicides; germanium, silicon carbide, A III B v , A II B IV , and A I B VII compounds and P and N doped organic semi-conductors. The material is made by pressing or rolling a laminated body constructed of metal foils, or by electrolytic, pyrolytic, vapour or ion beam deposition or cathode sputtering. Deposition is preferably made on a cooled planar substrate which is rotated in front of two vapour sources offset from the axis of rotation to afford easy control of the layer thickness. The materials are said to exhibit photoconductive and photovoltaic effects, superconductivity, variation of resistivity with electric and magnetic fields applied perpendicular or parallel to the layers, to be useful in rectifiers, capacitors and oscillation generators and to exhibit high heat transfer characteristics parallel to the layers. Typical materials consist of an alternating sequence of (1) 500 antimony and 1000 bismuth layers; (2) 10 iron and nickel layers; (3) 10 gold and goldpalladium layers; (4) caesium and platinum layers. In a typical thermocouple the two limbs joined by a metal bridge consist of such material, the number of layers in each limb being odd and such that the two layers adjacent the bridge are thermoelectrically P and N respectively.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DED0052030 | 1967-01-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1216001A true GB1216001A (en) | 1970-12-16 |
Family
ID=7053845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2531/68A Expired GB1216001A (en) | 1967-01-17 | 1968-01-17 | Electronic material |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1539282A1 (en) |
| GB (1) | GB1216001A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3767469A (en) * | 1971-09-01 | 1973-10-23 | Bailey Meter Co | In-situ oxygen detector |
| US4039352A (en) * | 1971-09-13 | 1977-08-02 | Institutul De Cercetaro Energetice Industriale Si Proictari Utilaje Energetice | High efficiency thermoelectric generator for the direct conversion of heat into electrical energy |
| WO1994016465A1 (en) * | 1993-01-12 | 1994-07-21 | Massachusetts Institute Of Technology | Superlattice structures particularly suitable for use as thermoelectric cooling materials |
| US5439528A (en) * | 1992-12-11 | 1995-08-08 | Miller; Joel | Laminated thermo element |
| US5610366A (en) * | 1993-08-03 | 1997-03-11 | California Institute Of Technology | High performance thermoelectric materials and methods of preparation |
| US5769943A (en) * | 1993-08-03 | 1998-06-23 | California Institute Of Technology | Semiconductor apparatus utilizing gradient freeze and liquid-solid techniques |
| US5900071A (en) * | 1993-01-12 | 1999-05-04 | Massachusetts Institute Of Technology | Superlattice structures particularly suitable for use as thermoelectric materials |
| US6060657A (en) * | 1998-06-24 | 2000-05-09 | Massachusetts Institute Of Technology | Lead-chalcogenide superlattice structures |
| US6060656A (en) * | 1997-03-17 | 2000-05-09 | Regents Of The University Of California | Si/SiGe superlattice structures for use in thermoelectric devices |
| US6452206B1 (en) | 1997-03-17 | 2002-09-17 | Massachusetts Institute Of Technology | Superlattice structures for use in thermoelectric devices |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012217742A1 (en) * | 2012-09-28 | 2014-04-03 | Siemens Aktiengesellschaft | Temperature sensor for gas turbine, has a thermocouple having two electrically conductive half-elements formed by thermal spraying of ceramic, while differing in Seebeck coefficient and connected to each other at a contact point |
-
1967
- 1967-01-17 DE DE19671539282 patent/DE1539282A1/en active Pending
-
1968
- 1968-01-17 GB GB2531/68A patent/GB1216001A/en not_active Expired
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3767469A (en) * | 1971-09-01 | 1973-10-23 | Bailey Meter Co | In-situ oxygen detector |
| US4039352A (en) * | 1971-09-13 | 1977-08-02 | Institutul De Cercetaro Energetice Industriale Si Proictari Utilaje Energetice | High efficiency thermoelectric generator for the direct conversion of heat into electrical energy |
| US5439528A (en) * | 1992-12-11 | 1995-08-08 | Miller; Joel | Laminated thermo element |
| WO1994016465A1 (en) * | 1993-01-12 | 1994-07-21 | Massachusetts Institute Of Technology | Superlattice structures particularly suitable for use as thermoelectric cooling materials |
| US5415699A (en) * | 1993-01-12 | 1995-05-16 | Massachusetts Institute Of Technology | Superlattice structures particularly suitable for use as thermoelectric cooling materials |
| US5900071A (en) * | 1993-01-12 | 1999-05-04 | Massachusetts Institute Of Technology | Superlattice structures particularly suitable for use as thermoelectric materials |
| US5610366A (en) * | 1993-08-03 | 1997-03-11 | California Institute Of Technology | High performance thermoelectric materials and methods of preparation |
| US5747728A (en) * | 1993-08-03 | 1998-05-05 | California Institute Of Technology | Advanced thermoelectric materials with enhanced crystal lattice structure and methods of preparation |
| US5769943A (en) * | 1993-08-03 | 1998-06-23 | California Institute Of Technology | Semiconductor apparatus utilizing gradient freeze and liquid-solid techniques |
| US6060656A (en) * | 1997-03-17 | 2000-05-09 | Regents Of The University Of California | Si/SiGe superlattice structures for use in thermoelectric devices |
| US6452206B1 (en) | 1997-03-17 | 2002-09-17 | Massachusetts Institute Of Technology | Superlattice structures for use in thermoelectric devices |
| US6060657A (en) * | 1998-06-24 | 2000-05-09 | Massachusetts Institute Of Technology | Lead-chalcogenide superlattice structures |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1539282A1 (en) | 1970-02-26 |
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